All Stories

  1. Scalable Vertical In–Ga–As Nanowire MOSFET With 67 mV/dec at 126μm Gate Width

    Article • IEEE Electron Device Letters, April 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  2. Gate Layout and Process Reliability Co‐Optimization in High‐Speed Vertical III–V Nanowire Metal‐Oxide‐Semiconductor Field‐Effect Transistor Technology

    Article • phys stat sol (a), February 2025, Wiley

    Lars Ohlsson

  3. Impact of Layout on the RF Performance of Vertical In–Ga–As Nanowire MOSFETs

    Article • IEEE Microwave and Wireless Technology Letters, January 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  4. RF Characterization of Ferroelectric MOS Capacitors

    Article • IEEE Electron Device Letters, September 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  5. TFET Circuit Configurations Operating Below 60 mV/dec

    Article • IEEE Transactions on Nanotechnology, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  6. gm/Id$g_m/I_d$ Analysis of vertical nanowire III–V TFETs

    Article • Electronics Letters, September 2023, the Institution of Engineering and Technology (the IET)

    Lars Ohlsson

  7. Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs

    Article • IEEE Electron Device Letters, July 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  8. Lateral III–V Nanowire MOSFETs in Low-Noise Amplifier Stages

    Article • IEEE Transactions on Microwave Theory and Techniques, February 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  9. Millimeter-Wave Vertical III-V Nanowire MOSFET Device-to-Circuit Co-Design

    Article • IEEE Transactions on Nanotechnology, January 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  10. Pulsed Millimeter Wave Radar for Hand Gesture Sensing and Classification

    Article • IEEE Sensors Letters, December 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  11. A phase‐correlated duo‐binary waveform generation technique for millimeter‐wave radar pulses

    Article • International Journal of Circuit Theory and Applications, November 2019, Wiley

    Lars Ohlsson

  12. Low-temperature back-end-of-line technology compatible with III-V nanowire MOSFETs

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, October 2019, American Vacuum Society

    Lars Ohlsson

  13. Millimeter-Wave Pulse Radar Scattering Measurements on the Human Hand

    Article • IEEE Antennas and Wireless Propagation Letters, July 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  14. Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon

    Article • January 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  15. Reflection of Coherent Millimeter-Wave Wavelets on Dispersive Materials: A Study on Porcine Skin

    Article • IEEE Transactions on Microwave Theory and Techniques, January 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  16. Mixed-domain gating algorithm for time-domain characterisation of millimetre-wave antennas

    Article • October 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  17. First InGaAs lateral nanowire MOSFET RF noise measurements and model

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  18. Codesign of Compact III-V Millimeter-Wave Wavelet Transmitters With On-Chip Antennas

    Article • IEEE Transactions on Microwave Theory and Techniques, January 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  19. A transmission line model for co-designed slot-coupled dielectric resonator antennas

    Article • October 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  20. Picosecond dynamics in a millimetre-wave RTD–MOSFET wavelet generator

    Article • Electronics Letters, October 2015, the Institution of Engineering and Technology (the IET)

    Lars Ohlsson

  21. Time-Domain System for Millimeter-Wave Material Characterization

    Article • IEEE Transactions on Microwave Theory and Techniques, September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  22. Monolithically-Integrated Millimetre-Wave Wavelet Transmitter With On-Chip Antenna

    Article • IEEE Microwave and Wireless Components Letters, September 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  23. Time domain material characterizations using leaky lens antennas

    Article • August 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  24. RF and DC Analysis of Stressed InGaAs MOSFETs

    Article • IEEE Electron Device Letters, February 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  25. A 15-Gb/s Wireless ON-OFF Keying Link

    Article • IEEE Access, January 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  26. RF reliability of gate last InGaAs nMOSFETs with high-k dielectric

    Article • October 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  27. Frequency modulation in mm-wave InGaAs MOSFET/RTD wavelet generators

    Article • May 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson, Mattias Borg

  28. Slot-Coupled Millimeter-Wave Dielectric Resonator Antenna for High-Efficiency Monolithic Integration

    Article • IEEE Transactions on Antennas and Propagation, April 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  29. Wideband and non-dispersive wavelet transmission using leaky lens antenna

    Article • Electronics Letters, February 2013, the Institution of Engineering and Technology (the IET)

    Lars Ohlsson

  30. $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ RTD–MOSFET Millimeter-Wave Wavelet Generator

    Article • IEEE Electron Device Letters, July 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson, Mattias Borg

  31. High-Frequency Performance of Self-Aligned Gate-Last Surface Channel $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFET

    Article • IEEE Electron Device Letters, March 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson, Mattias Borg

  32. High transconductance self-aligned gate-last surface channel In0.53Ga0.47As MOSFET

    Article • December 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  33. 60 GHz impulse radio measurements

    Article • September 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson

  34. Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers

    Article • June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson, Mattias Borg

  35. Impulse-based 4 Gbit/s radio link at 60 GHz

    Article • Electronics Letters, January 2011, the Institution of Engineering and Technology (the IET)

    Lars Ohlsson

  36. Admittance matching of 60 GHz rectangular dielectric resonator antennas for integrated impulse radio

    Article • November 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Lars Ohlsson