Publication not explained
This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.
If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.
Featured Image
Read the Original
This page is a summary of: Self-aligned gate-last surface channel In0.53Ga0.47As MOSFET with selectively regrown source and drain contact layers, June 2011, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/drc.2011.6086641.
You can read the full text:
Contributors
The following have contributed to this page