All Stories

  1. Photonic switching devices based on semiconductor nano-structures

    Article • Journal of Physics D Applied Physics, March 2014, Institute of Physics Publishing

    Chaoyuan Jin

  2. Coupling of InAs/InP quantum dots to the plasmon resonance of In nanoparticles grown by metal-organic vapor phase epitaxy

    Article • Applied Physics Letters, May 2013, American Institute of Physics

    Chaoyuan Jin

  3. Ultrafast, Energy-Efficient Photonic Switches Based on Semiconductor Nanostructures

    Article • January 2013, Optical Society of America (OSA)

    Chaoyuan Jin

  4. Optical control of the quality factor using coupled photonic crystal cavities

    Article • January 2012, Optical Society of America (OSA)

    Chaoyuan Jin

  5. Quantum Dot Switches: Towards Nanoscale Power-Efficient All-Optical Signal Processing

    Article • January 2012, Springer Science + Business Media

    Chaoyuan Jin

  6. Observation of phase shifts in a vertical cavity quantum dot switch

    Article • Applied Physics Letters, June 2011, American Institute of Physics

    Chaoyuan Jin, Osamu Kojima

  7. Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots

    Article • Applied Physics Letters, May 2011, American Institute of Physics

    Chaoyuan Jin

  8. Detailed Design and Characterization of All-Optical Switches Based on InAs/GaAs Quantum Dots in a Vertical Cavity

    Article • IEEE Journal of Quantum Electronics, November 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Chaoyuan Jin, Osamu Kojima

  9. All-optical switch using InAs quantum dots in a vertical cavity

    Article • May 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Chaoyuan Jin

  10. Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector

    Article • Applied Physics Letters, April 2010, American Institute of Physics

    Chaoyuan Jin, Osamu Kojima

  11. Self-assembled InAs quantum dots within a vertical cavity structure for all-optical switching devices

    Article • February 2010, SPIE

    Chaoyuan Jin

  12. Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity

    Article • Applied Physics Letters, July 2009, American Institute of Physics

    Chaoyuan Jin, Osamu Kojima

  13. Quantum dots in a vertical cavity for all-optical switching devices

    Article • May 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Chaoyuan Jin

  14. Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels

    Article • Applied Physics Letters, October 2008, American Institute of Physics

    Chaoyuan Jin

  15. Low-Threshold 1.3-$\mu$m GaInNAs Quantum-Well Lasers Using Quaternary-Barrier Structures

    Article • IEEE Photonics Technology Letters, June 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Chaoyuan Jin

  16. 1.55 μ m InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer

    Article • Applied Physics Letters, March 2008, American Institute of Physics

    Chaoyuan Jin, Dr Thomas Walther

  17. Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled In As ∕ Ga As quantum dot lasers

    Article • Physical Review B, August 2007, American Physical Society (APS)

    Chaoyuan Jin

  18. Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

    Article • Applied Physics Letters, July 2007, American Institute of Physics

    Chaoyuan Jin

  19. Photon Coupling Mechanism in 1.3-μm Quantum-Dot Lasers

    Article • May 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Chaoyuan Jin

  20. Photon coupling mechanism in 1.3-μm quantum-dot lasers

    Article • May 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Chaoyuan Jin

  21. Very low-threshold-current-density 1.34-μm gainnas/gaas quantum well lasers with a quaternary-barrier structure

    Article • May 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Chaoyuan Jin

  22. Very low-threshold-current-density 1.34-¿m GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure

    Article • May 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Chaoyuan Jin

  23. Observation and Modeling of a Room-Temperature Negative Characteristic Temperature 1.3-$\mu$m p-Type Modulation-Doped Quantum-Dot Laser

    Article • IEEE Journal of Quantum Electronics, December 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Chaoyuan Jin

  24. High-performance 1.3 µm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

    Article • IEE Proceedings - Optoelectronics, December 2006, the Institution of Engineering and Technology (the IET)

    Chaoyuan Jin

  25. p -doped 1.3μm InAs∕GaAs quantum-dot laser with a low threshold current density and high differential efficiency

    Article • Applied Physics Letters, August 2006, American Institute of Physics

    Chaoyuan Jin

  26. Effects of growth temperature on the structural and optical properties of 1.6μm GaInNAs∕GaAs multiple quantum wells

    Article • Applied Physics Letters, May 2006, American Institute of Physics

    Chaoyuan Jin

  27. High performance 1.3μm InAs/GaAs quantum dot lasers with low threshold current and negative characteristic temperature

    Article • April 2006, SPIE

    Chaoyuan Jin

  28. 1.3 [micro sign]m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

    Article • Electronics Letters, January 2006, the Institution of Engineering and Technology (the IET)

    Chaoyuan Jin

  29. 1.34 [micro sign]m GaInNAs quantum well lasers with low room-temperature threshold current density

    Article • Electronics Letters, January 2006, the Institution of Engineering and Technology (the IET)

    Chaoyuan Jin

  30. Detailed model and investigation of gain saturation and carrier spatial hole burning for a semiconductor optical amplifier with gain clamping by a vertical laser field

    Article • IEEE Journal of Quantum Electronics, May 2004, Institute of Electrical & Electronics Engineers (IEEE)

    Chaoyuan Jin

  31. Photon iterative numerical technique for steady-state simulation of gain-clamped semiconductor optical amplifiers

    Article • IEE Proceedings - Optoelectronics, December 2003, the Institution of Engineering and Technology (the IET)

    Chaoyuan Jin

  32. Comparing InGaAs and GaAsSb Metamorphic Buffer Layers on GaAs Substrates for InAs Quantum Dots Emitting at 1.55μm

    Article • Springer Science + Business Media

    Chaoyuan Jin, Dr Thomas Walther