Very low-threshold-current-density 1.34-¿m GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure

C. Y. Jin, H. Y. Liu, S. Y. Zhang, R. Airey, M. Hopkinson
  • May 2007, Institute of Electrical & Electronics Engineers (IEEE)
  • DOI: 10.1109/qels.2007.4431396

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http://dx.doi.org/10.1109/qels.2007.4431396

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