Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

C. Y. Jin, H. Y. Liu, S. Y. Zhang, Q. Jiang, S. L. Liew, M. Hopkinson, T. J. Badcock, E. Nabavi, D. J. Mowbray
  • Applied Physics Letters, July 2007, American Institute of Physics
  • DOI: 10.1063/1.2752778

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http://dx.doi.org/10.1063/1.2752778

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