1.55μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer

H. Y. Liu, Y. Qiu, C. Y. Jin, T. Walther, A. G. Cullis
  • Applied Physics Letters, March 2008, American Institute of Physics
  • DOI: 10.1063/1.2898895

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http://dx.doi.org/10.1063/1.2898895

The following have contributed to this page: Chaoyuan Jin and Dr Thomas Walther