p-doped 1.3μm InAs∕GaAs quantum-dot laser with a low threshold current density and high differential efficiency

H. Y. Liu, S. L. Liew, T. Badcock, D. J. Mowbray, M. S. Skolnick, S. K. Ray, T. L. Choi, K. M. Groom, B. Stevens, F. Hasbullah, C. Y. Jin, M. Hopkinson, R. A. Hogg
  • Applied Physics Letters, August 2006, American Institute of Physics
  • DOI: 10.1063/1.2336998

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http://dx.doi.org/10.1063/1.2336998

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