All Stories

  1. Charge pumping through isolated dopant atoms

    Article • December 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Giuseppe Carlo Tettamanzi

  2. An Accurate Single-Electron Pump Based on a Highly Tunable Silicon Quantum Dot

    Article • Nano Letters, June 2014, American Chemical Society (ACS)

    Dr Giuseppe Carlo Tettamanzi

  3. Probing the Spin States of a Single Acceptor Atom

    Article • Nano Letters, March 2014, American Chemical Society (ACS)

    Dr Giuseppe Carlo Tettamanzi

  4. Orbital Structure and Transport Characteristics of Single Donors

    Article • April 2013, Taylor & Francis

    Dr Giuseppe Carlo Tettamanzi

  5. Few electron limit of n-type metal oxide semiconductor single electron transistors

    Article • Nanotechnology, May 2012, Institute of Physics Publishing

    Dr Giuseppe Carlo Tettamanzi

  6. Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs

    Article • Journal of Applied Physics, December 2011, American Institute of Physics

    Dr Giuseppe Carlo Tettamanzi, Dr Gerhard Klimeck

  7. Interface Trap Density Metrology of State-of-the-Art Undoped Si n-FinFETs

    Article • IEEE Electron Device Letters, April 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Giuseppe Carlo Tettamanzi, Dr Gerhard Klimeck

  8. Single Ion Implantation into Si-Based Devices

    Article • January 2010, The Electrochemical Society

    Dr Giuseppe Carlo Tettamanzi, Dr Brett Cameron Johnson

  9. Flux noise in ion-implanted nanoSQUIDs

    Article • Superconductor Science and Technology, May 2009, Institute of Physics Publishing

    Dr Giuseppe Carlo Tettamanzi