What is it about?

A nanogapped, hollow transistor is proposed and constructed through the van der Waals stacking technique, which holds the potential for applications in reliable electronics and nanofluidic and pressure sensors.

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Why is it important?

This nanogapped, hollow field-effect transistor, which features a unique structure with one-side-open, one-side-encapsulated Janus semiconductor channels, can ensure the channel openness for functionality and interface passivation for reliable electronic behavior.


The unique hollow transistor structure holds the potential for exploiting reliable electronics, as well as nanofluid and pressure sensors.

Songlin Li
Nanjing University

Read the Original

This page is a summary of: A nanogapped hysteresis-free field-effect transistor, Applied Physics Letters, July 2022, American Institute of Physics,
DOI: 10.1063/5.0097673.
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