What is it about?
High quality and accurate computational data were obtained through first principle quantum mechanical calculations originated from Density functional theory with out the inclusion of empirical data (ab initio). The support of the computing facility allows us to carry out our research involving large scale atomistic simulations. The data we recently obtained clearly shows piezoelectricity in GaAs and InAs are proved to be nonlinear in relation to a general strain.
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Why is it important?
The high order fitting equation obtained through the parameterizations allowed us to directly evaluate higher order piezoelectric coefficients. By comparing with other and nonlinear models and also experimental data, we reached the conclusion that the validity of our model is correct in the limitation of small shear strain, particularly in case of (111) grown semiconductors. Such limitation however is not restricted under pseudomorphic growth in (001) direction where typically shear strain is small.
Read the Original
This page is a summary of: Non-linear piezoelectricity in zinc blende GaAs and InAs semiconductors, Journal of Applied Physics, August 2013, American Institute of Physics, DOI: 10.1063/1.4818798.
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