All Stories

  1. Impact of interlayer insulator formation methods on HfOx ferroelectricity in the metal–ferroelectric–insulator–semiconductor stack

    Article • Applied Physics Letters, January 2022, American Institute of Physics

    Professor Byung Gook Park

  2. Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM

    Article • Applied Physics Letters, November 2020, American Institute of Physics

    Professor Byung Gook Park

  3. Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array

    Article • Applied Physics Letters, October 2020, American Institute of Physics

    Professor Byung Gook Park

  4. SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory

    Article • Applied Physics Letters, May 2019, American Institute of Physics

    Professor Byung Gook Park

  5. Integrate-and-fire spiking neuron circuit exhibiting spike-triggered adaptation through input current modulation with back gate effect

    Article • Electronics Letters, July 2018, the Institution of Engineering and Technology (the IET)

    Professor Byung Gook Park

  6. Three-dimensional AND flash memory

    Article • Electronics Letters, April 2017, the Institution of Engineering and Technology (the IET)

    Professor Byung Gook Park

  7. Improvement of current drivability in high-scalable tunnel field-effect transistors with CMOS compatible self-aligned process

    Article • Electronics Letters, June 2016, the Institution of Engineering and Technology (the IET)

    Professor Byung Gook Park

  8. Gated twin-bit silicon–oxide–nitride–oxide–silicon NAND flash memory for high-density nonvolatile memory

    Article • Japanese Journal of Applied Physics, May 2015, Japan Society of Applied Physics

    Professor Byung Gook Park

  9. Vertical type double gate tunnelling FETs with thin tunnel barrier

    Article • Electronics Letters, April 2015, the Institution of Engineering and Technology (the IET)

    Professor Byung Gook Park

  10. Effects of periodic trench structure on cathodo-luminescence in InGaN/GaN multi-quantum wells

    Article • Electronics Letters, July 2014, the Institution of Engineering and Technology (the IET)

    Professor Byung Gook Park