Gated twin-bit silicon–oxide–nitride–oxide–silicon NAND flash memory for high-density nonvolatile memory

Yoon Kim, Won Bo Shim, Byung-Gook Park
  • Japanese Journal of Applied Physics, May 2015, Japan Society of Applied Physics
  • DOI: 10.7567/jjap.54.064201

The authors haven't finished explaining this publication. If you are the author, sign in to claim or explain your work.

Read Publication

The following have contributed to this page: Professor Byung Gook Park