Gated twin-bit silicon–oxide–nitride–oxide–silicon NAND flash memory for high-density nonvolatile memory

Yoon Kim, Won Bo Shim, Byung-Gook Park
  • Japanese Journal of Applied Physics, May 2015, Japan Society of Applied Physics
  • DOI: 10.7567/jjap.54.064201

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http://dx.doi.org/10.7567/jjap.54.064201

The following have contributed to this page: Professor Byung Gook Park