All Stories

  1. Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors

    Article • Applied Physics Letters, October 2019, American Institute of Physics

    Dr Stacia Keller, Athith Krishna

  2. Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN

    Article • Applied Physics Letters, October 2019, American Institute of Physics

    Dr Stacia Keller, Wenjian Liu, Islam Sayed

  3. Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN

    Article • Applied Physics Letters, July 2019, American Institute of Physics

    Dr Stacia Keller, Haoran Li, Wenjian Liu, Islam Sayed

  4. Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition

    Article • Applied Physics Letters, June 2019, American Institute of Physics

    Dr Stacia Keller

  5. Electron transport in N-polar GaN-based heterostructures

    Article • Applied Physics Letters, April 2019, American Institute of Physics

    Dr Stacia Keller, Haoran Li

  6. Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices

    Article • Journal of Applied Physics, March 2019, American Institute of Physics

    Dr Stacia Keller

  7. Record 34.2% Efficient mm-Wave N-Polar AlGaN/GaN MISHEMT at 87 GHz

    Article • Electronics Letters, September 2016, the Institution of Engineering and Technology (the IET)

    Dr Stacia Keller, Haoran Li

  8. InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays

    Article • Semiconductor Science and Technology, September 2015, Institute of Physics Publishing

    Dr Stacia Keller

  9. Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

    Article • Semiconductor Science and Technology, April 2015, Institute of Physics Publishing

    Dr Stacia Keller

  10. Improved properties of high-Al-composition AlGaN/GaN high electron mobility transistor structures with thin GaN cap layers

    Article • Japanese Journal of Applied Physics, August 2014, Japan Society of Applied Physics

    Dr Stacia Keller

  11. Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides

    Article • Semiconductor Science and Technology, August 2014, Institute of Physics Publishing

    Dr Stacia Keller