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  1. Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices

    Article • Applied Physics Letters, March 2022, American Institute of Physics

    Athith Krishna

  2. Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors

    Article • Applied Physics Letters, July 2020, American Institute of Physics

    Athith Krishna

  3. Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors

    Article • Applied Physics Letters, October 2019, American Institute of Physics

    Dr Stacia Keller, Athith Krishna