Wenjian Liu

All Stories

1. 
   A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods

   Article • Journal of Applied Physics, August 2020, American Institute of Physics

   Wenjian Liu

2. 
   An improved methodology for extracting interface state density at Si3N4/GaN

   Article • Applied Physics Letters, January 2020, American Institute of Physics

   Wenjian Liu

3. 
   Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN

   Article • Applied Physics Letters, October 2019, American Institute of Physics

   Dr Stacia Keller, Wenjian Liu, Islam Sayed

4. 
   Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN

   Article • Applied Physics Letters, July 2019, American Institute of Physics

   Dr Stacia Keller, Haoran Li, Wenjian Liu, Islam Sayed