Islam Sayed

All Stories

1. 
   Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN

   Article • Applied Physics Letters, October 2019, American Institute of Physics

   Dr Stacia Keller, Wenjian Liu, Islam Sayed

2. 
   Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN

   Article • Applied Physics Letters, July 2019, American Institute of Physics

   Dr Stacia Keller, Haoran Li, Wenjian Liu, Islam Sayed