All Stories

  1. Adjustable enhanced photoluminescence in whispering-gallery-mode microdisk arrays
  2. Unique features of laterally aligned GeSi nanowires self-assembled on the vicinal Si (001) surface misoriented toward the [100] direction
  3. Erratum: “Tunable photoluminescence of self-assembled GeSi quantum dots by B+ implantation and rapid thermal annealing” [J. Appl. Phys. 115, 233502 (2014)]
  4. Large-Area Ordered P-type Si Nanowire Arrays as Photocathode for Highly Efficient Photoelectrochemical Hydrogen Generation
  5. Large-area ordered Ge-Si compound quantum dot molecules on dot-patterned Si (001) substrates
  6. Tunable photoluminescence of self-assembled GeSi quantum dots by B+ implantation and rapid thermal annealing
  7. Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation
  8. Fabrication and characterization of SiGe coaxial quantum wells on ordered Si nanopillars
  9. Towards controllable growth of self-assembled SiGe single and double quantum dot nanostructures
  10. Controlled formation of GeSi nanostructures on periodic Si (001) sub-micro pillars
  11. Substantial influence on solar energy harnessing ability by geometries of ordered Si nanowire array
  12. Photogenerated charges and surface potential variations investigated on single Si nanorods by electrostatic force microscopy combined with laser irradiation
  13. Anomalous magnetoresistance of an array of GeSi nanowires
  14. Optical properties of coupled three-dimensional Ge quantum dot crystals
  15. Formation and Characterization of Multilayer GeSi Nanowires on Miscut Si (001) Substrates
  16. Perspectives of controlled GeSi dots on prepatterned Si (001) substrates
  17. A Feasible Routine for Large-Scale Nanopatterning via Nanosphere Lithography
  18. A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates
  19. Ordered GeSi nanorings grown on patterned Si (001) substrates
  20. Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots
  21. Enhanced photoluminescence due to lateral ordering of GeSi quantum dots on patterned Si(001) substrates
  22. Fabrication and characterization of ordered GeSi nanoislands on Si (001) substrates
  23. Circularly organized quantum dot nanostructures of Ge on Si substrates
  24. The fabrication and application of patterned Si(001) substrates with ordered pits via nanosphere lithography
  25. The studies of Ge quantum dots on strained Si0.7Ge0.3 layer by photoluminescence and deep level transient spectroscopy
  26. Temperature dependence of ordered GeSi island growth on patterned Si (001) substrates
  27. Systematic studies of the photoluminescence of Ge quantum dots grown on strained Si0.7Ge0.3 buffer layer
  28. Delayed Plastic Relaxation on Patterned Si Substrates: Coherent SiGe Pyramids with Dominant { 111 } Facets
  29. Growth and characterization of two- and three-dimensionally ordered quantum dots
  30. Ge∕Si islands in a three-dimensional island crystal studied by x-ray diffraction
  31. Growth of Ge islands on prepatterned Si (001) substrates
  32. Site-controlled and size-homogeneous Ge islands on prepatterned Si (001) substrates
  33. Two-dimensional lateral ordering of self-assembled Ge islands on patterned substrates
  34. Evolution of shape, height, and in-plane lattice constant of Ge-rich islands during capping with Si
  35. Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates
  36. Positioning of self-assembled Ge islands on stripe-patterned Si(001) substrates
  37. Ge island formation on stripe-patterned Si(001) substrates
  38. Influence of GaN domain size on the electron mobility of two-dimensional electron gases in AlGaN/GaN heterostructures determined by x-ray reflectivity and diffraction
  39. X-ray study of antiphase boundaries in the quadruple-period ordered GaAs0.87Sb0.13 alloy
  40. Quadruple-period ordering along [110] in a GaAs 0.87 Sb 0.13 alloy