All Stories

  1. Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Films
  2. Band-to-band tunneling switches based on two-dimensional van der Waals heterojunctions
  3. Reliability Improvement from La 2 O 3 Interfaces in Hf 0.5 Zr 0.5 O 2 ‐Based ...
  4. From Ferroelectric Material Optimization to Neuromorphic Devices
  5. Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N
  6. Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1T1C FeRAM
  7. Using Raman spectroscopy and x-ray diffraction for phase determination in ferroelectric mixed Hf1−xZrxO2-based layers
  8. Sputtered Ferroelectric Hafnium–Zirconium Oxide with High Remanent Polarization after Back-End-of-Line Compatible Annealing
  9. Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor
  10. Influence and mitigation of interference by LID and LETID in damp heat and thermal cycling tests on PV modules
  11. Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia–Zirconia Thin Films
  12. Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI
  13. Memory Window Enhancement in Antiferroelectric RAM by Hf Doping in ZrO₂
  14. Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films
  15. A FeFET-Based Hybrid Memory Accessible by Content and by Address
  16. Reconfigurable Field Effect Transistors Design Solutions for Delay-Invariant Logic Gates
  17. Neuromorphic computing: current developments and future challenges
  18. Temperature‐Dependent Phase Transitions in Hf x Zr 1‐x O 2 Mixed Oxides: Indications of a Proper Ferroelectric Material
  19. Oxygen vacancy concentration as a function of cycling and polarization state in TiN/Hf0.5Zr0.5O2/TiN ferroelectric capacitors studied by x-ray photoemission electron microscopy
  20. In situ studies on atomic layer etching of aluminum oxide using sequential reactions with trimethylaluminum and hydrogen fluoride
  21. Publisher Correction: The fundamentals and applications of ferroelectric HfO2
  22. Graph Coloring via Locally-Active Memristor Oscillatory Networks
  23. C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory
  24. The fundamentals and applications of ferroelectric HfO2
  25. Atomic layer etching of ferroelectric hafnium zirconium oxide thin films enables giant tunneling electroresistance
  26. Ferroelectric-based synapses and neurons for neuromorphic computing
  27. From Doping to Dilution: Local Chemistry and Collective Interactions of La in HfO 2
  28. Publisher's Note: “A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films” [Appl. Phys. Lett. 120, 022901 (2022)]
  29. Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices
  30. Achieving ferroelectric wakeup using a gradual switching approach
  31. Hole selective nickel oxide as transparent conductive oxide
  32. Many routes to ferroelectric HfO2: A review of current deposition methods
  33. 1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline
  34. A Germanium Nanowire Reconfigurable Transistor Model for Predictive Technology Evaluation
  35. Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions
  36. Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors
  37. Demonstration of a p-Type Ferroelectric FET With Immediate Read-After-Write Capability
  38. High electron mobility in strained GaAs nanowires
  39. Binary ferroelectric oxides for future computing paradigms
  40. Intrinsic Nature of Negative Capacitance in Multidomain Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric/Dielectric Heterostructures
  41. Ferroelectric field-effect transistors based on HfO2: a review
  42. Pyroelectric dependence of atomic layer-deposited Hf0.5Zr0.5O2 on film thickness and annealing temperature
  43. Effect of the Si Doping Content in HfO2 Film on the Key Performance Metrics of Ferroelectric FETs
  44. An unexplored antipolar phase in HfO2 from first principles and implication for wake-up mechanism
  45. Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide (HZO)/titanium nitride (TiN) stacks
  46. On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors
  47. Bipolar conductivity in ferroelectric La:HfZrO films
  48. Domains and domain dynamics in fluorite-structured ferroelectrics
  49. Special topic on ferroelectricity in hafnium oxide: Materials and devices
  50. Improved Vertex Coloring With NbOₓ Memristor-Based Oscillatory Networks
  51. Reconfigurable thin-film transistors based on a parallel array of Si-nanowires
  52. Chemical Stability of IrO 2 Top Electrodes in Ferroelectric Hf 0.5 Zr 0.5 O 2 ‐Based Metal–Insulator–Metal Struc...
  53. Next generation ferroelectric materials for semiconductor process integration and their applications
  54. Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf 0.5 Zr 0.5 O 2 Films
  55. Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing
  56. Progress and future prospects of negative capacitance electronics: A materials perspective
  57. Ferroelectricity in bulk hafnia
  58. Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films
  59. Light-tunable 2D subband population in a GaN/AlGaN heterostructure
  60. Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read
  61. Stabilizing the ferroelectric phase in HfO2-based films sputtered from ceramic targets under ambient oxygen
  62. Polarization switching in thin doped HfO2 ferroelectric layers
  63. Investigation of Accumulative Switching in Ferroelectric FETs: Enabling Universal Modeling of the Switching Behavior
  64. Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1−xZrxO2-based structures
  65. A Gibbs energy view of double hysteresis in ZrO2 and Si-doped HfO2
  66. What’s next for negative capacitance electronics?
  67. Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETs
  68. Lanthanum doping induced structural changes and their implications on ferroelectric properties of Hf1−xZrxO2 thin film
  69. Memory technology—a primer for material scientists
  70. Quantum and transport lifetimes in optically induced GaN/AlGaN 2DEGs grown on bulk GaN
  71. Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States
  72. Built-in bias fields for retention stabilization in hafnia-based ferroelectric tunnel junctions
  73. Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors
  74. Reconfigurable frequency multiplication with a ferroelectric transistor
  75. HfxZr1 − xO2 thin films for semiconductor applications: An Hf- and Zr-ALD precursor comparison
  76. Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface
  77. Compact FeFET Circuit Building Blocks for Fast and Efficient Nonvolatile Logic-in-Memory
  78. Inherent Charge-Sharing-Free Dynamic Logic Gates Employing Transistors With Multiple Independent Inputs
  79. Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices
  80. Critical parameters for the presence of a 2DEG in GaN/AlxGa1−xN heterostructures
  81. On the Origin of the Large Remanent Polarization in La:HfO 2
  82. Ferroelectric FETs With 20-nm-Thick HfO2Layer for Large Memory Window and High Performance
  83. Pattern Formation With Locally Active S-Type NbOx Memristors
  84. Nanoscale resistive switching memory devices: a review
  85. Multi-staged deposition of trench-gate oxides for power MOSFETs
  86. Designing Efficient Circuits Based on Runtime-Reconfigurable Field-Effect Transistors
  87. Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films
  88. Magneto-optical confirmation of Landau level splitting in a GaN/AlGaN 2DEG grown on bulk GaN
  89. Green coloring of GaN single crystals introduced by Cr impurity
  90. Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating
  91. Deactivation of silicon surface states by Al-induced acceptor states from Al–O monolayers in SiO2
  92. Unveiling the double-well energy landscape in a ferroelectric layer
  93. Direct Correlation of Ferroelectric Properties and Memory Characteristics in Ferroelectric Tunnel Junctions
  94. European Summit on Solid-State Device and Circuit Research: Double Conference in Dresden [Conference Reports]
  95. Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides
  96. Physical Approach to Ferroelectric Impedance Spectroscopy: The Rayleigh Element
  97. Deconvoluting charge trapping and nucleation interplay in FeFETs: Kinetics and Reliability
  98. Demonstration of High-speed Hysteresis-free Negative Capacitance in Ferroelectric Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf>
  99. SDVSRM - a new SSRM based technique featuring dynamically adjusted, scanner synchronized sample voltages for measurement of actively operated devices
  100. Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE
  101. Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf<inf>0.5</inf>Zr<inf>0.5</inf>.O<inf>2</inf>/ A1<inf>2</inf>O<inf>3</inf>Capacitor Stacks
  102. Review and perspective on ferroelectric HfO2-based thin films for memory applications
  103. Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1–x)O2 Ultrathin Capacitors
  104. Vertically Integrated Reconfigurable Nanowire Arrays
  105. Electron spin resonance in a 2D system at a GaN/AlGaN heterojunction
  106. Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors
  107. Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors
  108. Comparative Study of Reliability of Ferroelectric and Anti-Ferroelectric Memories
  109. Domain Formation in Ferroelectric Negative Capacitance Devices
  110. Embedding hafnium oxide based FeFETs in the memory landscape
  111. Towards Full-area Passivating Contacts for Silicon Surfaces based on Al<inf>2</inf>O<inf>3</inf>-TiO<inf>x</inf> Double Layers
  112. Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors
  113. On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2
  114. Effect of Annealing Ferroelectric HfO 2 Thin Films: In Situ, High Temperature X‐Ray Diffraction
  115. Ferroelectric negative capacitance domain dynamics
  116. Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology
  117. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
  118. Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study
  119. Interplay between ferroelectric and resistive switching in doped crystalline HfO2
  120. Pyroelectricity of silicon-doped hafnium oxide thin films
  121. Hafnium oxide based ferroelectric devices for memories and beyond
  122. Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO 2
  123. Normally-off operating GaN-based pseudovertical MOSFETs with MBE grown source region
  124. Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material
  125. Analysis of Performance Instabilities of Hafnia-Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents
  126. Signal and Noise of Schottky-Junction Parallel Silicon Nanowire Transducers for Biochemical Sensing
  127. Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO 2
  128. Random Number Generation Based on Ferroelectric Switching
  129. Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films
  130. Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications
  131. Mimicking biological neurons with a nanoscale ferroelectric transistor
  132. On the stabilization of ferroelectric negative capacitance in nanoscale devices
  133. Reconfigurable Si Nanowire Nonvolatile Transistors
  134. A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
  135. Reconfigurable NAND/NOR logic gates in 28 nm HKMG and 22 nm FD-SOI FeFET technology
  136. Insights into antiferroelectrics from first-order reversal curves
  137. Impact of hot carrier stress on small-signal parameters of FD-SOI NMOSFETs
  138. Physical and circuit modeling of HfO<inf>2</inf> based ferroelectric memories and devices
  139. Reconfigurable NAND-NOR circuits fabricated by a CMOS printing technique
  140. Anti-ferroelectric ZrO<inf>2</inf>, an enabler for low power non-volatile 1T-1C and 1T random access memories
  141. Human α-thrombin detection platform using aptamers on a silicon nanowire field-effect transistor
  142. In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs
  143. Top-Down Technology for Reconfigurable Nanowire FETs With Symmetric On-Currents
  144. A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device
  145. Si Doped Hafnium Oxide-A “Fragile” Ferroelectric System
  146. The impact of charge compensated and uncompensated strontium defects on the stabilization of the ferroelectric phase in HfO2
  147. Anti-ferroelectric-like ZrO<inf>2</inf> non-volatile memory: Inducing non-volatility within state-of-the-art DRAM
  148. Origin of orange color in nominally undoped HVPE GaN crystals
  149. Effect of acceptor doping on phase transitions of HfO2 thin films for energy-related applications
  150. Novel ferroelectric FET based synapse for neuromorphic systems
  151. Optimizing process conditions for improved Hf1−xZrxO2 ferroelectric capacitor performance
  152. Reconfigurable germanium transistors with low source-drain leakage for secure and energy-efficient doping-free complementary circuits
  153. Reliability Comparison of ZrO2-Based DRAM High-k Dielectrics Under DC and AC Stress
  154. Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors
  155. Modeling and design considerations for negative capacitance field-effect transistors
  156. Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics
  157. Control of unintentional oxygen incorporation in GaN
  158. Exploiting transistor-level reconfiguration to optimize combinational circuits
  159. The RFET—a reconfigurable nanowire transistor and its application to novel electronic circuits and systems
  160. Operation regimes and electrical transport of steep slope Schottky Si-FinFETs
  161. Analog memristive and memcapacitive properties of Ti / AI<inf>2</inf>O<inf>3</inf> / Nb<inf>2</inf>O<inf>5</inf> / Ti resistive switches
  162. Tuning the tunneling probability by mechanical stress in Schottky barrier based reconfigurable nanowire transistors
  163. Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors
  164. Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions
  165. Doping marker layers for ex situ growth characterisation of HVPE gallium nitride
  166. A comprehensive study on the structural evolution of HfO2thin films doped with various dopants
  167. Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment
  168. High-k/GaN interface engineering toward AlGaN/GaN MIS-HEMT with improved Vth stability
  169. A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
  170. How to make DRAM non-volatile? Anti-ferroelectrics: A new paradigm for universal memories
  171. Pseudo-vertical GaN-based trench gate metal oxide semiconductor field effect transistor
  172. Atomic layer deposited TiO /AlO nanolaminates as moisture barriers for organic devices
  173. Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2
  174. The pyroelectric coefficient of free standing GaN grown by HVPE
  175. Analysis of Vth variability in NbOx-based threshold switches
  176. Bringing reconfigurable nanowire FETs to a logic circuits compatible process platform
  177. High endurance strategies for hafnium oxide based ferroelectric field effect transistor
  178. Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2
  179. Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories
  180. Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications
  181. Impact of field cycling on HfO2 based non-volatile memory devices
  182. Novel approach for n-type doping of HVPE gallium nitride with germanium
  183. Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO 2 Thin Films
  184. Current Progress in the Chemical Vapor Deposition of Type-Selected Horizontally Aligned Single-Walled Carbon Nanotubes
  185. Compact Nanowire Sensors Probe Microdroplets
  186. High Area Capacity Lithium-Sulfur Full-cell Battery with Prelitiathed Silicon Nanowire-Carbon Anodes for Long Cycling Stability
  187. Trapped charge densities in Al2O3-based silicon surface passivation layers
  188. Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN
  189. Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors
  190. Correlation between the macroscopic ferroelectric material properties of Si:HfO2and the statistics of 28 nm FeFET memory arrays
  191. Printable Parallel Arrays of Si Nanowire Schottky-Barrier-FETs With Tunable Polarity for Complementary Logic
  192. Versatile resistive switching in niobium oxide
  193. Root cause of degradation in novel HfO<inf>2</inf>-based ferroelectric memories
  194. Capacitive Switching: An Energy-Efficient, BiFeO3-Coated Capacitive Switch with Integrated Memory and Demodulation Functions (Adv. Electron. Mater. 3/2016)
  195. Comparative study of ITO and TiN fabricated by low-temperature RF biased sputtering
  196. Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes
  197. Silicon doping of HVPE GaN bulk-crystals avoiding tensile strain generation
  198. Analysis of threshold voltage instability in AlGaN/GaN MISHEMTs by forward gate voltage stress pulses
  199. Rectifying filamentary resistive switching in ion-exfoliated LiNbO3 thin films
  200. An Energy-Efficient, BiFeO3-Coated Capacitive Switch with Integrated Memory and Demodulation Functions
  201. Ferroelectric Nonvolatile Memories
  202. Strain-engineering for improved tunneling in reconfigurable silicon nanowire transistors
  203. Dielectric Nanomaterials for Silicon Solar Cells
  204. Conduction barrier offset engineering for DRAM capacitor scaling
  205. Al2O3-TiO2 Nanolaminates for Conductive Silicon Surface Passivation
  206. Nonvolatile Field-Effect Transistors Using Ferroelectric Doped HfO2 Films
  207. On the Control of the Fixed Charge Densities in Al 2 O 3 -Based Silicon Surface Passivation Schemes
  208. Comparison of Silicon Nanowire Growth on SiO2 and on Carbon Substrates
  209. Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells
  210. Unfolding principle gives insight into physics behind threshold switching in a NbO memristor
  211. Ferroelectric phase transitions in nanoscale HfO2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors
  212. Impact of charge trapping on the ferroelectric switching behavior of doped HfO2
  213. Low-thermal budget flash light annealing for Al2O3surface passivation
  214. Breakdown and Protection of ALD Moisture Barrier Thin Films
  215. Integration of niobium oxide-based resistive switching cells with different select properties into nanostructured cross-bar arrays
  216. (Invited) Integration Challenges of Ferroelectric Hafnium Oxide Based Embedded Memory
  217. Investigation of the reliability degradation of scaled SONOS memory transistors
  218. Stress-Dependent Performance Optimization of Reconfigurable Silicon Nanowire Transistors
  219. Detailed analysis of oxide related charges and metal-oxide barriers in terrace etched Al2O3and HfO2on AlGaN/GaN heterostructure capacitors
  220. Investigation of band gap and permittivity of the perovskite CaTiO3in ultrathin layers
  221. Complex Internal Bias Fields in Ferroelectric Hafnium Oxide
  222. Using vertical capacitance-voltage measurements for fast on-wafer characterization of epitaxial GaN-on-Si material
  223. On the voltage scaling potential of SONOS non-volatile memory transistors
  224. Influence of the substrate grade on structural and optical properties of GaN/AlGaN superlattices
  225. Stabilizing the ferroelectric phase in doped hafnium oxide
  226. 2D Mapping of Chemical and Field Effect Passivation of Al2O3 on Silicon Substrates
  227. Energy monitoring of high dose ion implantation in semiconductors via photocurrent measurement
  228. Via Hole Conditioning in Silicon Heterojunction metal Wrap through Solar Cells
  229. Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowires
  230. Flexible Electronics: Light Weight and Flexible High-Performance Diagnostic Platform (Adv. Healthcare Mater. 10/2015)
  231. Polycrystalline silicon gate originated CMOS device failure investigated by Scanning Spreading Resistance Microscopy
  232. Effect of the stoichiometry of niobium oxide on the resistive switching of Nb2O5 based metal–insulator–metal stacks
  233. Functionality-Enhanced Logic Gate Design Enabled by Symmetrical Reconfigurable Silicon Nanowire Transistors
  234. Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications
  235. ALD Al2O3 based nanolaminates for solar cell applications
  236. Mobility Investigations on Strained 30-nm High- $k$ Metal Gate MOSFETs by Geometrical Magnetoresistance Effect
  237. Low Temperature Compatible Hafnium Oxide Based Ferroelectrics
  238. Light Weight and Flexible High-Performance Diagnostic Platform
  239. Stability analysis supports memristor circuit design
  240. Experimental Proof of the Drain-Side Dielectric Breakdown of HKMG nMOSFETs Under Logic Circuit Operation
  241. Next-generation ferroelectric memories based on FE-HfO2
  242. Nonlinear Dynamics of a Locally-Active Memristor
  243. Interpretation of azimuthal angle dependence of periodic gratings in Mueller matrix spectroscopic ellipsometry
  244. Big Data ohne Energiekollaps
  245. Correspondence - Dynamic leakage current compensation revisited
  246. Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
  247. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films
  248. BiasMDP: Carrier lifetime characterization technique with applied bias voltage
  249. Thickness dependent barrier performance of permeation barriers made from atomic layer deposited alumina for organic devices
  250. Defect generation and activation processes in HfO2thin films: Contributions to stress-induced leakage currents
  251. Microfluidic alignment and trapping of 1D nanostructures – a simple fabrication route for single-nanowire field effect transistors
  252. Physical model of threshold switching in NbO2 based memristors
  253. Silicon Nanowires: Fabrication and Applications
  254. Schottky barrier height engineering for next generation DRAM capacitors
  255. Effect of independently sized gates on the delay of reconfigurable silicon nanowire transistor based circuits
  256. Impact of postdeposition annealing upon film properties of atomic layer deposition-grown Al2O3 on GaN
  257. Adjusting the forming step for resistive switching in Nb2O5 by ion irradiation
  258. Stability and Performance of Heterogeneous Anode Assemblies of Silicon Nanowires on Carbon Meshes for Lithium-Sulfur Battery Applications
  259. Integration of molecular-layer-deposited aluminum alkoxide interlayers into inorganic nanolaminate barriers for encapsulation of organic electronics with improved stress resistance
  260. Reconfigurable nanowire electronics – A review
  261. About the deformation of ferroelectric hystereses
  262. Symmetrical Al2O3-based passivation layers for p- and n-type silicon
  263. Investigation of Embedded Perovskite Nanoparticles for Enhanced Capacitor Permittivities
  264. Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide
  265. Bipolar Electric-Field Enhanced Trapping and Detrapping of Mobile Donors in BiFeO 3 Memristors
  266. Optoelectronic switching of nanowire-based hybrid organic/oxide/semiconductor field-effect transistors
  267. Reconfigurable Nanowire Electronics-Enabling a Single CMOS Circuit Technology
  268. Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors
  269. Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric
  270. Local Ion Irradiation-Induced Resistive Threshold and Memory Switching in Nb 2 O 5 /NbO x Films
  271. Photomask CD and LER characterization using Mueller matrix spectroscopic ellipsometry
  272. Ferroelectric Hafnium Oxide A Game Changer to FRAM?
  273. Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors
  274. OLED compatible water-based nanolaminate encapsulation systems using ozone based starting layer
  275. Influence of nitrogen trap states on the electronic properties of high-k metal gate transistors
  276. Analog resistive switching behavior of Al/Nb2O5/Al device
  277. Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage
  278. (Invited) Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
  279. Temperature dependent switching behaviour of nickel silicided undoped silicon nanowire devices
  280. Composition profiles across MIMs for resistive switching studied by EDS and EELS
  281. Near surface inversion layer recombination in Al2O3 passivated n-type silicon
  282. Resistive switching in unstructured, polycrystalline BiFeO3 thin films with downscaled electrodes
  283. Impact of different dopants on the switching properties of ferroelectric hafniumoxide
  284. Unfolding the local activity of a memristor
  285. Dynamic off-state TDDB of ultra short channel HKMG nFETS and its implications on CMOS logic reliability
  286. Localization of temperature sensitive areas on analog circuits
  287. Scanning Spreading Resistance Microscopy analysis of locally blocked implant sites
  288. Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories
  289. Atomic layer deposited high-κ nanolaminates for silicon surface passivation
  290. The Degradation Process of High- $k~{\rm SiO}_{2}/{\rm HfO}_{2}$ Gate-Stacks: A Combined Experimental and First Principles Investigation
  291. Conduction Mechanisms and Breakdown Characteristics of $\hbox{Al}_{2}\hbox{O}_{3}$-Doped $\hbox{ZrO}_{2}$ High-
  292. Influence of substrate quality on structural properties of AlGaN/GaN superlattices grown by molecular beam epitaxy
  293. Exploiting Memristive BiFeO3Bilayer Structures for Compact Sequential Logics
  294. Ionic effects on the transport characteristics of nanowire-based FETs in a liquid environment
  295. Schottky barrier-based silicon nanowire pH sensor with live sensitivity control
  296. Elementary Aspects for Circuit Implementation of Reconfigurable Nanowire Transistors
  297. Unfolding the Threshold Switching Behavior of a Memristor
  298. Reconfigurable silicon nanowire devices and circuits: Opportunities and challenges
  299. Material Prospects of Reconfigurable Transistor (RFETs) – From Silicon to Germanium Nanowires
  300. Silicon heterojunction metal wrap through solar cells – a 3D TCAD simulation study
  301. Silicon heterojunction metal wrap through solar cells – a 3D TCAD simulation study
  302. Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
  303. Forming-Free Resistive Switching in Multiferroic BiFeO 3 thin Films with Enhanced Nanoscale Shunts
  304. Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations
  305. From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices
  306. Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
  307. Channel length dependent sensor response of Schottky-barrier FET pH sensors
  308. Publisher's Note: “Sponge-like Si-SiO2 nanocomposite—Morphology studies of spinodally decomposed silicon-rich oxide” [Appl. Phys. Lett. 103, 131911 (2013)]
  309. Application of Mueller matrix spectroscopic ellipsometry to determine line edge roughness on photomasks
  310. Non-volatile data storage in HfO2-based ferroelectric FETs
  311. Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
  312. Sponge-like Si-SiO2 nanocomposite—Morphology studies of spinodally decomposed silicon-rich oxide
  313. Dually Active Silicon Nanowire Transistors and Circuits with Equal Electron and Hole Transport
  314. Sensitivity analysis for OMOG and EUV photomasks characterized by UV-NIR spectroscopic ellipsometry
  315. Characterization of multilayer gate stacks by multi-phonon transient trap spectroscopy
  316. Millisecond flash lamp annealing for LaLuO3 and LaScO3 high-k dielectrics
  317. Reconfigurable nanowire electronics — Device principles and circuit prospects
  318. New color sensor concept based on single spectral tunable photodiode
  319. HEMT test structure technology for fast on-wafer characterization of epitaxial GaN-on-Si material
  320. Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories
  321. Silicon nanowires - a versatile technology platform
  322. Key concepts behind forming-free resistive switching incorporated with rectifying transport properties
  323. Energy efficiency enhancements for semiconductors, communications, sensors and software achieved in cool silicon cluster project
  324. Influence of Frequency Dependent Time to Breakdown on High-K/Metal Gate Reliability
  325. Performance investigation and optimization of Si:HfO2 FeFETs on a 28 nm bulk technology
  326. Structural and dielectric properties of sputtered SrxZr(1−x)Oy
  327. Mesoscopic analysis of leakage current suppression in ZrO2/Al2O3/ZrO2 nano-laminates
  328. Parallel arrays of Schottky barrier nanowire field effect transistors: Nanoscopic effects for macroscopic current output
  329. Room temperature fabricated NbOx/Nb2O5 memory switching device with threshold switching effect
  330. Inline-Characterization and Step Coverage Optimization of Deposited Dielectrics in DRAM Structures
  331. Nanosession: Ferroelectrics - New and Unusal Material Systems
  332. Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
  333. (Invited) Hafnium Oxide Based CMOS Compatible Ferroelectric Materials
  334. Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications
  335. Hafnium Oxide Based CMOS Compatible Ferroelectric Materials
  336. Local Doping Profiles for Height-Selective Emitters Determined by Scanning Spreading Resistance Microscopy (SSRM)
  337. Atomic layer deposition of anatase TiO2 on porous electrodes for dye-sensitized solar cells
  338. Molecular beam deposited zirconium dioxide as a high-κ dielectric for future GaN based power devices
  339. Reliability of $\hbox{SrRuO}_{3}\hbox{/SrTiO}_{3}\hbox{/SrRuO}_{3}$ Stacks for DRAM Applications
  340. Silicon and Germanium Nanoclusters Embedded in Zirconium Dioxide Matrices
  341. Ferroelectricity in Gd-Doped HfO2 Thin Films
  342. OFF-state induced threshold voltage relaxation after PBTI stress
  343. Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors
  344. Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties
  345. Ferroelectricity in Simple Binary ZrO2and HfO2
  346. An investigation of the electrical properties of the interface between pyrolytic carbon and silicon for Schottky diode applications
  347. Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films
  348. Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG
  349. HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention
  350. Thermally activated crystallization of Nb2O5 grown on Pt electrode
  351. Substrate effect on the resistive switching in BiFeO3 thin films
  352. Low-cost caesium phosphate as n-dopant for organic light-emitting diodes
  353. Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulation
  354. Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
  355. Metal oxide memories based on thermochemical and valence change mechanisms
  356. Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$
  357. Reconfigurable Silicon Nanowire Transistors
  358. Ferroelectricity in yttrium-doped hafnium oxide
  359. Reduction of leakage currents with nanocrystals embedded in an amorphous matrix in metal-insulator-metal capacitor stacks
  360. Direct Probing of Schottky Barriers in Si Nanowire Schottky Barrier Field Effect Transistors
  361. Impact of carbon junction implant on leakage currents and defect distribution: Measurement and simulation
  362. Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications
  363. Phase transitions in ferroelectric silicon doped hafnium oxide
  364. Control of Rectifying and Resistive Switching Behavior in BiFeO$_{3}$ Thin Films
  365. Multiscale modeling of nanowire-based Schottky-barrier field-effect transistors for sensor applications
  366. Phase stabilization of sputtered strontium zirconate
  367. The influence of crystallinity on the resistive switching behavior of TiO2
  368. Reduced leakage current in BiFeO3 thin films with rectifying contacts
  369. Optical characterization of three-dimensional structures within a DRAM capacitor
  370. Influence of composition and bottom electrode properties on the local conductivity of TiN/HfTiO2 and TiN/Ru/HfTiO2 stacks
  371. Polarity Behavior and Adjustment in Silicon Nanowire Schottky Junction Transistors
  372. Applicability of molecular beam deposition for the growth of high-k oxides
  373. Evaluation of the electrical and physical properties of thin calcium titanate high-k insulators for capacitor applications
  374. Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor
  375. Macroscopic and microscopic electrical characterizations of high-k ZrO2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structures
  376. Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors
  377. An investigation of the electrical properties of metal-insulator-silicon capacitors with pyrolytic carbon electrodes
  378. An empirical model describing the MLC retention of charge trap flash memories
  379. Carbon junction implant: Effect on leakage currents and defect distribution
  380. Flash-Type Memories
  381. Improved high-temperature etch processing of high-k metal gate stacks in scaled TANOS memory devices
  382. The influence of bottom oxide thickness on the extraction of the trap energy distribution in SONOS (silicon-oxide-nitride-oxide-silicon) structures
  383. (Invited) Nanocrystalline Materials: Optimization of Thin Film Properties
  384. Characterisation of retention properties of charge-trapping memory cells at low temperatures
  385. Select Device Disturb Phenomenon in TANOS NAND Flash Memories
  386. Nonvolatile Memory Concepts Based on Resistive Switching in Inorganic Materials
  387. TaN metal gate damage during high-k (Al2O3) high-temperature etch
  388. Experimental study of domain wall motion in long nanostrips under the influence of a transverse field
  389. Charge cross talk in sub-lithographically shrinked 32nm Twin Flash™ memory cells
  390. Accurate program simulation of TANOS charge trapping devices
  391. The Future of Charge Trapping Memories
  392. Localized Charge Trapping Memory Cells in a 63 nm Generation with Nanoscale Epitaxial Cobalt Salicide Buried Bitlines
  393. A New Twin Flash Cell for 2 and 4 Bit Operation at 63nm Feature Size
  394. Monte Carlo Simulation of Charge Carrier Injection in Twin Flash Memory Devices during Program and Erase
  395. 1/f Noise Analysis of a 75 nm Twin-Flash Technology Non-Volatile Memory Cell
  396. Future trends in charge trapping memories
  397. Influence of the morphology of ferroelectric SrBi2Ta2O9 thin films deposited by metal organic decomposition on its electrical characteristics
  398. Integration of stacked capacitor module with ultra-thin ferroelectric SrBi2Ta2O9 film for high density ferroelectric random access memory applications at low voltage operation
  399. Materials for Information Technology
  400. Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept
  401. Material Aspects in Emerging Nonvolatile Memories
  402. Modeling and simulation of electron injection during programming in Twin Flash/spl trade/ devices based on energy transport and the non-local lucky electron concept
  403. 110nm NROM technology for code and data flash products
  404. SrBi 2 Ta 2 O 9 ferroelectric thin film capacitors: degradation in a hydrogen ambient
  405. H+, Na+, and K+ ion sensing properties of sodium and aluminum coimplanted LPCVD silicon oxynitride thin films
  406. Alkali- and hydrogen ion sensing properties of LPCVD silicon oxynitride thin films
  407. Kinetic of phase transformation of SrBi2Ta2O9 deposited by metalorganic decomposition on platinum electrodes
  408. Platinum contamination issues in ferroelectric memories
  409. Effect of barium contamination on gate oxide integrity in high-k dram
  410. Oxygen tracer diffusion in IrO2 barrier films
  411. Ferroelectric Nonvolatile Memories
  412. Integration of FeRAM Devices into a Standard CMOS Process-Impact of Ferroelectric Anneals on CMOS Characteristics
  413. Integration of FeRAM Devices into a Standard CMOS Process-Impact of Ferroelectric Anneals on CMOS Characteristics
  414. Influence of deposition conditions on Ir/IrO[sub 2] oxygen barrier effectiveness
  415. FeRAM technology for high density applications
  416. Impact of platinum contamination on ferroelectric memories
  417. Barium, Strontium and Bismuth Contamination in CMOS Processes
  418. Thickness dependent morphology and electrical characteristics of SrBi2Ta2O9 deposited by metal organic decomposition
  419. Integration of H2 barriers for ferroelectric memories based on SrBi2Ta2O9 (SBT)
  420. Low temperature process and thin SBT films for ferroelectric memory devices
  421. Aspects of Barium Contamination in High Dielectric Dynamic Random Access Memories
  422. An Overview of FeRAM Technology for High Density Applications
  423. The influence of surface oxidation on the pH-sensing properties of silicon nitride
  424. The pH-sensing properties of tantalum pentoxide films fabricated by metal organic low pressure chemical vapor deposition
  425. The effect of random dopant fluctuations on the minimum channel length of short-channel MOS transistors
  426. Field-Effect transistors as transducers in biosensors for substrates of dehydrogenases
  427. Influence of statistical dopant fluctuations on MOS transistors with deep submicron channel lengths
  428. An Introduction to Nonvolatile Memory Technology
  429. An overview of twin-flash technology
  430. Highly scalable 90nm STI bounded twin flash cell with local interconnect
  431. Programming Transients of Trapping Nitride Storage Flash Memory Cells and Evidence of Lateral Charge Redistributions during or after Programming
  432. Stack capacitor integration with buried oxygen barrier using chemical mechanical polishing of noble metals