All Stories

  1. SrCoO3-δ and SrCo1-xTixO3-δ perovskites as electrocatalytic materials for oxygen evolution reaction in alkaline environment

    Article • Materials Chemistry and Physics, January 2026, Elsevier

    Dr Ilia Valov

  2. Dynamic Monolayer WSe2 Electrolyte‐Gated Transistor with Coexistent Double Relaxation Timescale for Enhanced Physical Reservoir Computing

    Article • Small, June 2025, Wiley

    Dr Ilia Valov

  3. Advanced electrocatalyst for OER by laser treatment of BaCo-oxide powders

    Article • Electrochimica Acta, April 2025, Elsevier

    Dr Ilia Valov

  4. Electrochemical ohmic memristors for continual learning

    Article • Nature Communications, March 2025, Springer Science + Business Media

    Dr Ilia Valov

  5. Intrinsic, room temperature quantum resistance memristor for next generation zero-chain traceability SI standard

    Article • January 2025, Springer Science + Business Media

    Dr Ilia Valov

  6. Roadmap to neuromorphic computing with emerging technologies

    Article • APL Materials, October 2024, American Institute of Physics

    Adnan Mehonic, Dr Ilia Valov

  7. Random Projection‐Based Locality‐Sensitive Hashing in a Memristor Crossbar Array with Stochasticity for Sparse Self‐Attention‐Based Transformer

    Article • Advanced Electronic Materials, June 2024, Wiley

    Dr Ilia Valov

  8. Influence of active electrode impurity on memristive characteristics of ECM devices

    Article • Journal of Solid State Electrochemistry, February 2024, Springer Science + Business Media

    Dr Ilia Valov

  9. Electrochemical rewiring through quantum conductance effects in single metallic memristive nanowires

    Article • Nanoscale Horizons, January 2024, Royal Society of Chemistry

    Dr Ilia Valov

  10. Electrochemical ohmic memristors for continual learning

    Article • December 2023, Springer Science + Business Media

    Dr Ilia Valov

  11. Influence of moisture on the ferroelectric properties of sputtered hafnium oxide thin films

    Article • Journal of Applied Physics, November 2023, American Institute of Physics

    Dr Ilia Valov

  12. Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices

    Article • Scientific Reports, October 2023, Springer Science + Business Media

    Dr Ilia Valov

  13. Memristive devices for metrological applications

    Article • ACTA IMEKO, September 2023, IMEKO International Measurement Confederation

    Dr Ilia Valov

  14. Microwave synthesis of molybdenene from MoS2

    Article • Nature Nanotechnology, September 2023, Springer Science + Business Media

    Dr Ilia Valov

  15. Electrochemical‐Memristor‐Based Artificial Neurons and Synapses—Fundamentals, Applications, and Challenges

    Article • Advanced Materials, July 2023, Wiley

    Dr Ilia Valov

  16. Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

    Article • ACS Nano, June 2023, American Chemical Society (ACS)

    Dr Ilia Valov

  17. Simulating the filament morphology in electrochemical metallization cells

    Article • Neuromorphic Computing and Engineering, June 2023, Institute of Physics Publishing

    Dr Ilia Valov

  18. Filament behaviour and stability in ECM memristive devices studied by electrochemical impedance spectroscopy

    Article • May 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ilia Valov

  19. Chemical Influence of Carbon Interface Layers in Metal/Oxide Resistive Switches

    Article • ACS Applied Materials & Interfaces, March 2023, American Chemical Society (ACS)

    Dr Ilia Valov

  20. Editorial: Focus issue on 2D materials for neuromorphic computing

    Article • Neuromorphic Computing and Engineering, March 2023, Institute of Physics Publishing

    Dr Ilia Valov

  21. Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems

    Article • IEEE Journal of the Electron Devices Society, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ilia Valov

  22. Resistive switching and role of interfaces in memristive devices based on amorphous NbOx grown by anodic oxidation

    Article • Physical Chemistry Chemical Physics, January 2023, Royal Society of Chemistry

    Dr Ilia Valov

  23. Experimental and Modeling Study of Metal–Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive Devices

    Article • ACS Applied Materials & Interfaces, November 2022, American Chemical Society (ACS)

    Dr Ilia Valov

  24. Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications (Adv. Mater. 32/2022)

    Article • Advanced Materials, August 2022, Wiley

    Dr Ilia Valov

  25. Rainer Waser – A Pioneer of Fundamentals of Resistive Switching Memories

    Article • Advanced Electronic Materials, August 2022, Wiley

    Dr Ilia Valov

  26. Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications

    Article • Advanced Materials, July 2022, Wiley

    Dr Ilia Valov

  27. Neuromorphic computing: current developments and future challenges

    Article • Neuromorphic Computing and Engineering, May 2022, Institute of Physics Publishing

    Prof. Dr.-Ing. Thomas Mikolajick, Dr Ilia Valov

  28. Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage

    Article • Advanced Electronic Materials, April 2022, Wiley

    Dr Ilia Valov

  29. Memristive devices based on single ZnO nanowires—from material synthesis to neuromorphic functionalities

    Article • Semiconductor Science and Technology, January 2022, Institute of Physics Publishing

    Dr Ilia Valov

  30. Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalities

    Article • RSC Advances, January 2022, Royal Society of Chemistry

    Dr Ilia Valov

  31. Front Matter

    Article • January 2022, Elsevier

    Dr Ilia Valov

  32. Design of Materials Configuration for Optimizing Redox‐Based Resistive Switching Memories

    Article • Advanced Materials, November 2021, Wiley

    Dr Ilia Valov

  33. Memristively programmable transistors

    Article • Nanotechnology, November 2021, Institute of Physics Publishing

    Dr Ilia Valov

  34. Standards for the Characterization of Endurance in Resistive Switching Devices

    Article • ACS Nano, November 2021, American Chemical Society (ACS)

    Dr Ilia Valov

  35. Structure‐Dependent Influence of Moisture on Resistive Switching Behavior of ZnO Thin Films

    Article • Advanced Materials Interfaces, July 2021, Wiley

    Dr Ilia Valov

  36. Impact of moisture absorption on the resistive switching characteristics of a polyethylene oxide-based atomic switch

    Article • Journal of Materials Chemistry C, January 2021, Royal Society of Chemistry

    Dr Ilia Valov

  37. Water-Mediated Ionic Migration in Memristive Nanowires with a Tunable Resistive Switching Mechanism

    Article • ACS Applied Materials & Interfaces, October 2020, American Chemical Society (ACS)

    Dr Ilia Valov

  38. Memristors with alloyed electrodes

    Article • Nature Nanotechnology, June 2020, Springer Science + Business Media

    Dr Ilia Valov

  39. Brain‐Inspired Structural Plasticity through Reweighting and Rewiring in Multi‐Terminal Self‐Organizing Memristive Nanowire Networks

    Article • Advanced Intelligent Systems, June 2020, Wiley

    Dr Ilia Valov

  40. Design of defect-chemical properties and device performance in memristive systems

    Article • Science Advances, May 2020, American Association for the Advancement of Science

    Dr Ilia Valov

  41. Copper facilitated nickel oxy-hydroxide films as efficient synergistic oxygen evolution electrocatalyst

    Article • Journal of Catalysis, April 2020, Elsevier

    Dr Ilia Valov

  42. Nanoscale Electrochemical Studies: How Can We Use the Atomic Switch

    Article • January 2020, Springer Science + Business Media

    Dr Ilia Valov

  43. Nanowire Memristors: Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires (Adv. Electron. Mater. 9/2019)

    Article • Advanced Electronic Materials, September 2019, Wiley

    Dr Ilia Valov

  44. Ionic Modulation of Electrical Conductivity of ZnO Due to Ambient Moisture

    Article • Advanced Materials Interfaces, July 2019, Wiley

    Dr Ilia Valov

  45. Electrolysis of Water at Atomically Tailored Epitaxial Cobaltite Surfaces

    Article • Chemistry of Materials, March 2019, American Chemical Society (ACS)

    Dr Ilia Valov

  46. Active Electrode Redox Reactions and Device Behavior in ECM Type Resistive Switching Memories

    Article • Advanced Electronic Materials, March 2019, Wiley

    Dr Ilia Valov

  47. Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

    Article • Advanced Electronic Materials, March 2019, Wiley

    Dr Ilia Valov

  48. Silicon memristors go electric

    Article • Nature Electronics, February 2019, Springer Science + Business Media

    Dr Ilia Valov

  49. Resistivity control by the electrochemical removal of dopant atoms from a nanodot

    Article • Faraday Discussions, January 2019, Royal Society of Chemistry

    Dr Ilia Valov

  50. Electrochemically prepared oxides for resistive switching memories

    Article • Faraday Discussions, January 2019, Royal Society of Chemistry

    Dr Ilia Valov

  51. Preface

    Article • Faraday Discussions, January 2019, Royal Society of Chemistry

    Dr Ilia Valov

  52. Phase-change memories (PCM) – Experiments and modelling: general discussion

    Article • Faraday Discussions, January 2019, Royal Society of Chemistry

    Dr Cina Foroutan-Nejad, Dr Ilia Valov

  53. Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion

    Article • Faraday Discussions, January 2019, Royal Society of Chemistry

    Dr Ilia Valov

  54. Synaptic and neuromorphic functions: general discussion

    Article • Faraday Discussions, January 2019, Royal Society of Chemistry

    Dr Ilia Valov

  55. Valence change ReRAMs (VCM) - Experiments and modelling: general discussion

    Article • Faraday Discussions, January 2019, Royal Society of Chemistry

    Dr Ilia Valov

  56. Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities

    Article • Nature Communications, December 2018, Springer Science + Business Media

    Dr Ilia Valov

  57. Recommended Methods to Study Resistive Switching Devices

    Article • Advanced Electronic Materials, September 2018, Wiley

    Dr Ilia Valov

  58. Effects of Moisture and Redox Reactions in VCM and ECM Resistive Switching Memories

    Article • Journal of Physics D Applied Physics, July 2018, Institute of Physics Publishing

    Dr Ilia Valov

  59. Spring-Like Pseudoelectroelasticity of Monocrystalline Cu2S Nanowire

    Article • Nano Letters, July 2018, American Chemical Society (ACS)

    Dr Ilia Valov, Haimei Zheng

  60. Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?

    Article • Advanced Materials, June 2018, Wiley

    Dr Ilia Valov

  61. Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules

    Article • Advanced Materials, June 2018, Wiley

    Dr Ilia Valov

  62. Electrochemically prepared oxides for resistive switching devices

    Article • Electrochimica Acta, June 2018, Elsevier

    Dr Ilia Valov

  63. Degradation Kinetics during Oxygen Electrocatalysis on Perovskite-Based Surfaces in Alkaline Media

    Article • Langmuir, January 2018, American Chemical Society (ACS)

    Dr Ilia Valov

  64. Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte Nanodots

    Article • Advanced Materials, January 2018, Wiley

    Dr Ilia Valov

  65. Processes and Effects of Oxygen and Moisture in Resistively Switching TaO x and HfO x

    Article • Advanced Electronic Materials, December 2017, Wiley

    Dr Ilia Valov

  66. Multibit memory operation of metal-oxide bi-layer memristors

    Article • Scientific Reports, December 2017, Nature

    Dr Ilia Valov

  67. Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices

    Article • Journal of Electroceramics, December 2017, Springer Science + Business Media

    Dr Ilia Valov

  68. Non-volatile memories: Organic memristors come of age

    Article • Nature Materials, October 2017, Nature

    Dr Ilia Valov

  69. Electrochemical Tantalum Oxide for Resistive Switching Memories

    Article • Advanced Materials, October 2017, Wiley

    Dr Ilia Valov

  70. Ordering and Phase Control in Epitaxial Double-Perovskite Catalysts for the Oxygen Evolution Reaction

    Article • ACS Catalysis, September 2017, American Chemical Society (ACS)

    Dr Ilia Valov

  71. Anodic Oxides As Electrolytes for Resistive Switching Devices

    Article • ECS Meeting Abstracts, September 2017, The Electrochemical Society

    Dr Ilia Valov

  72. Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)

    Article • Semiconductor Science and Technology, August 2017, Institute of Physics Publishing

    Dr Ilia Valov

  73. Interfacial Metal–Oxide Interactions in Resistive Switching Memories

    Article • ACS Applied Materials & Interfaces, May 2017, American Chemical Society (ACS)

    Dr Ilia Valov

  74. Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory

    Article • ACS Applied Materials & Interfaces, March 2017, American Chemical Society (ACS)

    Dr Ilia Valov

  75. SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO2/Ag based systems

    Article • Nanotechnology, March 2017, Institute of Physics Publishing

    Dr Ilia Valov

  76. Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

    Article • Advanced Functional Materials, February 2017, Wiley

    Dr Ilia Valov

  77. Oxide Thin Films for Memristive Devices

    Article • January 2017, Elsevier

    Dr Ilia Valov

  78. Ionic conductivity of low yttria-doped cubic zirconium oxide nitride single crystals

    Article • Solid State Ionics, November 2016, Elsevier

    Dr Ilia Valov

  79. Stability and Degradation of Perovskite Electrocatalysts for Oxygen Evolution Reaction

    Article • Electrochimica Acta, November 2016, Elsevier

    Dr Ilia Valov

  80. (Invited) Mobile Ions, Transport and Redox Processes in Memristive Devices

    Article • ECS Transactions, September 2016, The Electrochemical Society

    Dr Ilia Valov

  81. (Invited) Mobile Ions, Transport and Redox Processes in Memristive Devices

    Article • ECS Meeting Abstracts, September 2016, The Electrochemical Society

    Dr Ilia Valov

  82. Humidity effects on the redox reactions and ionic transport in a Cu/Ta2O5/Pt atomic switch structure

    Article • Japanese Journal of Applied Physics, May 2016, Japan Society of Applied Physics

    Dr Ilia Valov

  83. Electrochemical processes and device improvement in conductive bridge RAM cells (Phys. Status Solidi A 2∕2016)

    Article • phys stat sol (a), February 2016, Wiley

    Dr Ilia Valov

  84. Resistive Switching Mechanisms on TaO x and SrRuO 3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy

    Article • ACS Nano, January 2016, American Chemical Society (ACS)

    Dr Ilia Valov

  85. Electrochemical Metallization Memories

    Article • January 2016, Wiley

    Dr Ilia Valov

  86. Physics and Chemistry of Nanoionic Cells

    Article • January 2016, Wiley

    Dr Ilia Valov

  87. Electrochemistry at the Nanoscale

    Article • Nanoscale, January 2016, Royal Society of Chemistry

    Dr Ilia Valov

  88. Nanoscale electrochemistry using dielectric thin films as solid electrolytes

    Article • Nanoscale, January 2016, Royal Society of Chemistry

    Dr Ilia Valov

  89. PrxBa1-xCoO3Oxide Electrodes for Oxygen Evolution Reaction in Alkaline Solutions by Chemical Solution Deposition

    Article • Journal of The Electrochemical Society, December 2015, The Electrochemical Society

    Dr Ilia Valov

  90. Electrochemical processes and device improvement in conductive bridge RAM cells

    Article • phys stat sol (a), December 2015, Wiley

    Dr Ilia Valov

  91. Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

    Article • Nature Nanotechnology, September 2015, Nature

    Dr Ilia Valov

  92. Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOxBased Memristive Devices

    Article • Advanced Materials, September 2015, Wiley

    Dr Ilia Valov

  93. Processes and Limitations during Filament Formation and Dissolution in GeS x -based ReRAM Memory Cells

    Article • The Journal of Physical Chemistry C, August 2015, American Chemical Society (ACS)

    Dr Ilia Valov

  94. Redox Reactions at Cu,Ag/Ta2O5Interfaces and the Effects of Ta2O5Film Density on the Forming Process in Atomic Switch Structures

    Article • Advanced Functional Materials, June 2015, Wiley

    Dr Ilia Valov

  95. Modeling of Quantized Conductance Effects in Electrochemical Metallization Cells

    Article • IEEE Transactions on Nanotechnology, May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ilia Valov

  96. Understanding the conductive channel evolution in Na:WO3−x-based planar devices

    Article • Nanoscale, January 2015, Royal Society of Chemistry

    Dr Ilia Valov

  97. Influence of Graphene Interlayers on Electrode-Electrolyte Interfaces in Resistive Random Accesses Memory Cells

    Article • MRS Proceedings, January 2015, Cambridge University Press

    Dr Ilia Valov

  98. Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches

    Article • Nanotechnology, September 2014, Institute of Physics Publishing

    Dr Ilia Valov

  99. (Keynote) Atomic Scale and Interface Interactions in Redox-Based Resistive Switching Memories

    Article • ECS Transactions, August 2014, The Electrochemical Society

    Dr Ilia Valov

  100. Inside Back Cover: Impact of the Counter-Electrode Material on Redox Processes in Resistive Switching Memories (ChemElectroChem 8/2014)

    Article • ChemElectroChem, July 2014, Wiley

    Dr Ilia Valov

  101. Physical origins and suppression of Ag dissolution in GeSx-based ECM cells

    Article • Physical Chemistry Chemical Physics, July 2014, Royal Society of Chemistry

    Dr Ilia Valov

  102. Impact of the Counter-Electrode Material on Redox Processes in Resistive Switching Memories

    Article • ChemElectroChem, June 2014, Wiley

    Dr Ilia Valov

  103. Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

    Article • Nature Communications, June 2014, Springer Science + Business Media

    Dr Ilia Valov

  104. Live demonstration: An associative capacitive network based on nanoscale complementary resistive switches

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ilia Valov, Dr Omid Kavehei

  105. Quantum size effects and non-equilibrium states in nanoscale silicon dioxide based resistive switches

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ilia Valov

  106. Statistical modeling of electrochemical metallization memory cells

    Article • May 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ilia Valov

  107. Nanobattery Effect in RRAMs—Implications on Device Stability and Endurance

    Article • IEEE Electron Device Letters, February 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ilia Valov

  108. Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale

    Article • ChemElectroChem, December 2013, Wiley

    Dr Ilia Valov

  109. Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures

    Article • Scientific Reports, October 2013, Springer Science + Business Media

    Dr Ilia Valov

  110. (Invited) The Role of Electrochemical Interfaces in ReRAM Memory Cells

    Article • ECS Transactions, August 2013, The Electrochemical Society

    Dr Ilia Valov

  111. New insights into redox based resistive switches

    Article • August 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ilia Valov

  112. Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories

    Article • ACS Nano, July 2013, American Chemical Society (ACS)

    Dr Ilia Valov

  113. Comment on “Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices”

    Article • The Journal of Physical Chemistry C, June 2013, American Chemical Society (ACS)

    Dr Ilia Valov

  114. Simulation of polarity independent RESET in electrochemical metallization memory cells

    Article • May 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ilia Valov

  115. Nanosession: Electrochemical Metallization Memories

    Article • April 2013, Wiley

    Dr Ilia Valov

  116. Nanobatteries in redox-based resistive switches require extension of memristor theory

    Article • Nature Communications, April 2013, Springer Science + Business Media

    Dr Ilia Valov

  117. Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta2O5 atomic switch

    Article • AIP Advances, March 2013, American Institute of Physics

    Dr Ilia Valov

  118. Cation-based resistance change memory

    Article • Journal of Physics D Applied Physics, February 2013, Institute of Physics Publishing

    Dr Ilia Valov

  119. Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories

    Article • Scientific Reports, January 2013, Springer Science + Business Media

    Dr Ilia Valov

  120. Switching kinetics of electrochemical metallization memory cells

    Article • Physical Chemistry Chemical Physics, January 2013, Royal Society of Chemistry

    Dr Ilia Valov

  121. An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing

    Article • Nanoscale, January 2013, Royal Society of Chemistry

    Dr Ilia Valov, Dr Omid Kavehei

  122. Bond nature of active metal ions in SiO2-based electrochemical metallization memory cells

    Article • Nanoscale, January 2013, Royal Society of Chemistry

    Dr Ilia Valov

  123. Preparation and characterization of GeSx thin-films for resistive switching memories

    Article • Thin Solid Films, January 2013, Elsevier

    Dr Ilia Valov

  124. Comment onReal-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte- Based ReRAM

    Article • Advanced Materials, October 2012, Wiley

    Dr Ilia Valov

  125. Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories

    Article • Journal of Solid State Electrochemistry, October 2012, Springer Science + Business Media

    Dr Ilia Valov

  126. Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory

    Article • Advanced Materials, July 2012, Wiley

    Dr Ilia Valov

  127. Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

    Article • Nature Materials, April 2012, Springer Science + Business Media

    Dr Ilia Valov

  128. Quantum conductance and switching kinetics of AgI-based microcrossbar cells

    Article • Nanotechnology, March 2012, Institute of Physics Publishing

    Dr Ilia Valov

  129. Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide

    Article • Nanoscale, January 2012, Royal Society of Chemistry

    Dr Ilia Valov

  130. Redox processes in silicon dioxide thin films using copper microelectrodes

    Article • Applied Physics Letters, November 2011, American Institute of Physics

    Dr Ilia Valov

  131. Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

    Article • Advanced Functional Materials, October 2011, Wiley

    Dr Ilia Valov

  132. Capacity based nondestructive readout for complementary resistive switches

    Article • Nanotechnology, September 2011, Institute of Physics Publishing

    Dr Ilia Valov

  133. Electrochemical metallization memories—fundamentals, applications, prospects

    Article • Nanotechnology, June 2011, Institute of Physics Publishing

    Dr Ilia Valov

  134. Electrochemical metallization memories—fundamentals, applications, prospects

    Article • Nanotechnology, May 2011, Institute of Physics Publishing

    Dr Ilia Valov

  135. An EMF cell with a nitrogen solid electrolyte—on the transference of nitrogen ions in yttria-stabilized zirconia

    Article • Physical Chemistry Chemical Physics, January 2011, Royal Society of Chemistry

    Dr Ilia Valov

  136. Electrochemical activation of molecular nitrogen at the Ir/YSZ interface

    Article • Physical Chemistry Chemical Physics, January 2011, Royal Society of Chemistry

    Roger De Souza, Dr Ilia Valov

  137. Proton mobility in SiO2 thin films and impact of hydrogen and humidity on the resistive switching effect

    Article • MRS Proceedings, January 2011, Cambridge University Press

    Dr Ilia Valov

  138. A Study of the Kinetics of the Electrochemical Deposition of Ce3+/Ce4+ Oxides

    Article • January 2011, Springer Science + Business Media

    Dr Ilia Valov

  139. Oxide nitrides: From oxides to solids with mobile nitrogen ions

    Article • Progress in Solid State Chemistry, December 2009, Elsevier

    Dr Ilia Valov

  140. Thermodynamics, structure and kinetics in the system Ga–O–N

    Article • Progress in Solid State Chemistry, December 2009, Elsevier

    Dr Ilia Valov

  141. Ionic and electronic conductivity of nitrogen-doped Yttrium-stabilized Zirconium single crystals.

    Article • Solid State Ionics, November 2009, Elsevier

    Dr Ilia Valov, Dr. Robert Gerald Stützer

  142. ChemInform Abstract: Defect Chemistry of the Cage Compound, Ca12Al14O33-δ- Understanding the Route from a Solid Electrolyte to a Semiconductor and Electride.

    Article • ChemInform, August 2009, Wiley

    Dr Ilia Valov

  143. Faradaic currents during electroforming of resistively switching Ag–Ge–Se type electrochemical metallization memory cells

    Article • Physical Chemistry Chemical Physics, January 2009, Royal Society of Chemistry

    Dr Ilia Valov

  144. Defect chemistry of the cage compound, Ca12Al14O33−δ—understanding the route from a solid electrolyte to a semiconductor and electride

    Article • Physical Chemistry Chemical Physics, January 2009, Royal Society of Chemistry

    Dr Ilia Valov

  145. Electrochemical Reactions in Nanoionics - Towards Future Resistive Switching Memories

    Article • January 2009, The Electrochemical Society

    Dr Ilia Valov

  146. Electrocatalysts for bifunctional oxygen/air electrodes

    Article • Journal of Power Sources, December 2008, Elsevier

    Dr Ilia Valov

  147. Electrode activation and degradation: Morphology changes of platinum electrodes on YSZ during electrochemical polarisation

    Article • Solid State Ionics, October 2008, Elsevier

    Dr Ilia Valov

  148. Defect Chemistry and Transport Properties of Nitrogen‐Doped YSZ

    Article • Zeitschrift für anorganische und allgemeine Chemie, August 2008, Wiley

    Dr Ilia Valov

  149. A chemically driven insulator–metal transition in non-stoichiometric and amorphous gallium oxide

    Article • Nature Materials, April 2008, Springer Science + Business Media

    Dr Ilia Valov

  150. Preparation of nitrogen-doped YSZ thin films by pulsed laser deposition and their characterization

    Article • Journal of Materials Science, January 2007, Springer Science + Business Media

    Dr Ilia Valov

  151. Kinetic studies of the electrochemical nitrogen reduction and incorporation into yttria stabilized zirconia

    Article • Solid State Ionics, October 2006, Elsevier

    Dr Ilia Valov

  152. Electrochemical Incorporation of Nitrogen into a Zirconia Solid Electrolyte

    Article • Electrochemical and Solid-State Letters, January 2006, The Electrochemical Society

    Dr Ilia Valov

  153. Nitrogen Tracer Diffusion in Yttria Doped Zirconium Oxonitride

    Article • Defect and Diffusion Forum, April 2005, Trans Tech Publications

    Professor Christos Argirusis, Dr Ilia Valov

  154. Electrochemical Reduction and Incorporation of Nitrogen into Oxygen Conducting Oxides

    Article • Zeitschrift für anorganische und allgemeine Chemie, September 2004, Wiley

    Dr Ilia Valov

  155. Electrochemical growth of thin La2O3 films on oxide and metal surfaces

    Article • Materials Science and Engineering C, January 2003, Elsevier

    Dr Ilia Valov

  156. Study of the kinetics of processes during electrochemical deposition of zirconia from nonaqueous electrolytes

    Article • Electrochimica Acta, October 2002, Elsevier

    Dr Ilia Valov

  157. Chemical composition and corrosion resistance of passive chromate films formed on stainless steels 316 L and 1.4301

    Article • Materials Chemistry and Physics, January 2002, Elsevier

    Dr Ilia Valov

  158. Electrochemical deposition of thin zirconia films on stainless steel 316 L

    Article • Materials Chemistry and Physics, July 2000, Elsevier

    Dr Ilia Valov