All Stories

  1. Computing in a memory with physics
  2. Rethinking alkaline water electrolysis under industrial conditions
  3. Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation
  4. Non‐Destructive, Reference‐Free Quantitative Analysis of TaOx Memristive Devices Using Soft X‐Ray Radiation
  5. A photonically linked memristive neural network
  6. SrCoO3-δ and SrCo1-xTixO3-δ perovskites as electrocatalytic materials for oxygen evolution reaction in alkaline environment
  7. Spectroscopic investigation of the structural and electronic properties of oxygen-deficient tantalum oxide thin films
  8. Dynamic Monolayer WSe2 Electrolyte‐Gated Transistor with Coexistent Double Relaxation Timescale for Enhanced Physical Reservoir Computing
  9. Advanced electrocatalyst for OER by laser treatment of BaCo-oxide powders
  10. Electrochemical ohmic memristors for continual learning
  11. Intrinsic, room temperature quantum resistance memristor for next generation zero-chain traceability SI standard
  12. Roadmap to neuromorphic computing with emerging technologies
  13. Random Projection‐Based Locality‐Sensitive Hashing in a Memristor Crossbar Array with Stochasticity for Sparse Self‐Attention‐Based Transformer
  14. Influence of active electrode impurity on memristive characteristics of ECM devices
  15. Electrochemical rewiring through quantum conductance effects in single metallic memristive nanowires
  16. Electrochemical ohmic memristors for continual learning
  17. Influence of moisture on the ferroelectric properties of sputtered hafnium oxide thin films
  18. Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices
  19. Memristive devices for metrological applications
  20. Microwave synthesis of molybdenene from MoS2
  21. Electrochemical‐Memristor‐Based Artificial Neurons and Synapses—Fundamentals, Applications, and Challenges
  22. Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems
  23. Simulating the filament morphology in electrochemical metallization cells
  24. Filament behaviour and stability in ECM memristive devices studied by electrochemical impedance spectroscopy
  25. Chemical Influence of Carbon Interface Layers in Metal/Oxide Resistive Switches
  26. Editorial: Focus issue on 2D materials for neuromorphic computing
  27. Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems
  28. Resistive switching and role of interfaces in memristive devices based on amorphous NbOx grown by anodic oxidation
  29. Experimental and Modeling Study of Metal–Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive Devices
  30. Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications (Adv. Mater. 32/2022)
  31. Rainer Waser – A Pioneer of Fundamentals of Resistive Switching Memories
  32. Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications
  33. Neuromorphic computing: current developments and future challenges
  34. Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage
  35. Memristive devices based on single ZnO nanowires—from material synthesis to neuromorphic functionalities
  36. Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalities
  37. Front Matter
  38. Design of Materials Configuration for Optimizing Redox‐Based Resistive Switching Memories
  39. Memristively programmable transistors
  40. Standards for the Characterization of Endurance in Resistive Switching Devices
  41. Structure‐Dependent Influence of Moisture on Resistive Switching Behavior of ZnO Thin Films
  42. Impact of moisture absorption on the resistive switching characteristics of a polyethylene oxide-based atomic switch
  43. Water-Mediated Ionic Migration in Memristive Nanowires with a Tunable Resistive Switching Mechanism
  44. Memristors with alloyed electrodes
  45. Brain‐Inspired Structural Plasticity through Reweighting and Rewiring in Multi‐Terminal Self‐Organizing Memristive Nanowire Networks
  46. Design of defect-chemical properties and device performance in memristive systems
  47. Copper facilitated nickel oxy-hydroxide films as efficient synergistic oxygen evolution electrocatalyst
  48. Nanoscale Electrochemical Studies: How Can We Use the Atomic Switch
  49. Nanowire Memristors: Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires (Adv. Electron. Mater. 9/2019)
  50. Ionic Modulation of Electrical Conductivity of ZnO Due to Ambient Moisture
  51. Electrolysis of Water at Atomically Tailored Epitaxial Cobaltite Surfaces
  52. Active Electrode Redox Reactions and Device Behavior in ECM Type Resistive Switching Memories
  53. Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires
  54. Silicon memristors go electric
  55. Resistivity control by the electrochemical removal of dopant atoms from a nanodot
  56. Electrochemically prepared oxides for resistive switching memories
  57. Preface
  58. Phase-change memories (PCM) – Experiments and modelling: general discussion
  59. Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion
  60. Synaptic and neuromorphic functions: general discussion
  61. Valence change ReRAMs (VCM) - Experiments and modelling: general discussion
  62. Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities
  63. Recommended Methods to Study Resistive Switching Devices
  64. Effects of Moisture and Redox Reactions in VCM and ECM Resistive Switching Memories
  65. Spring-Like Pseudoelectroelasticity of Monocrystalline Cu2S Nanowire
  66. Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?
  67. Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules
  68. Electrochemically prepared oxides for resistive switching devices
  69. Degradation Kinetics during Oxygen Electrocatalysis on Perovskite-Based Surfaces in Alkaline Media
  70. Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte Nanodots
  71. Processes and Effects of Oxygen and Moisture in Resistively Switching TaO x and HfO x
  72. Multibit memory operation of metal-oxide bi-layer memristors
  73. Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices
  74. Non-volatile memories: Organic memristors come of age
  75. Electrochemical Tantalum Oxide for Resistive Switching Memories
  76. Ordering and Phase Control in Epitaxial Double-Perovskite Catalysts for the Oxygen Evolution Reaction
  77. Anodic Oxides As Electrolytes for Resistive Switching Devices
  78. Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)
  79. Interfacial Metal–Oxide Interactions in Resistive Switching Memories
  80. Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory
  81. SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO2/Ag based systems
  82. Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride
  83. Oxide Thin Films for Memristive Devices
  84. Ionic conductivity of low yttria-doped cubic zirconium oxide nitride single crystals
  85. Stability and Degradation of Perovskite Electrocatalysts for Oxygen Evolution Reaction
  86. (Invited) Mobile Ions, Transport and Redox Processes in Memristive Devices
  87. (Invited) Mobile Ions, Transport and Redox Processes in Memristive Devices
  88. Humidity effects on the redox reactions and ionic transport in a Cu/Ta2O5/Pt atomic switch structure
  89. Electrochemical processes and device improvement in conductive bridge RAM cells (Phys. Status Solidi A 2∕2016)
  90. Resistive Switching Mechanisms on TaO x and SrRuO 3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy
  91. Electrochemical Metallization Memories
  92. Physics and Chemistry of Nanoionic Cells
  93. Electrochemistry at the Nanoscale
  94. Nanoscale electrochemistry using dielectric thin films as solid electrolytes
  95. PrxBa1-xCoO3Oxide Electrodes for Oxygen Evolution Reaction in Alkaline Solutions by Chemical Solution Deposition
  96. Electrochemical processes and device improvement in conductive bridge RAM cells
  97. Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
  98. Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOxBased Memristive Devices
  99. Processes and Limitations during Filament Formation and Dissolution in GeS x -based ReRAM Memory Cells
  100. Redox Reactions at Cu,Ag/Ta2O5Interfaces and the Effects of Ta2O5Film Density on the Forming Process in Atomic Switch Structures
  101. Modeling of Quantized Conductance Effects in Electrochemical Metallization Cells
  102. Understanding the conductive channel evolution in Na:WO3−x-based planar devices
  103. Influence of Graphene Interlayers on Electrode-Electrolyte Interfaces in Resistive Random Accesses Memory Cells
  104. Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches
  105. (Keynote) Atomic Scale and Interface Interactions in Redox-Based Resistive Switching Memories
  106. Inside Back Cover: Impact of the Counter-Electrode Material on Redox Processes in Resistive Switching Memories (ChemElectroChem 8/2014)
  107. Physical origins and suppression of Ag dissolution in GeSx-based ECM cells
  108. Impact of the Counter-Electrode Material on Redox Processes in Resistive Switching Memories
  109. Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
  110. Live demonstration: An associative capacitive network based on nanoscale complementary resistive switches
  111. Quantum size effects and non-equilibrium states in nanoscale silicon dioxide based resistive switches
  112. Statistical modeling of electrochemical metallization memory cells
  113. Nanobattery Effect in RRAMs—Implications on Device Stability and Endurance
  114. Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale
  115. Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures
  116. (Invited) The Role of Electrochemical Interfaces in ReRAM Memory Cells
  117. New insights into redox based resistive switches
  118. Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories
  119. Comment on “Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices”
  120. Simulation of polarity independent RESET in electrochemical metallization memory cells
  121. Nanosession: Electrochemical Metallization Memories
  122. Nanobatteries in redox-based resistive switches require extension of memristor theory
  123. Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta2O5 atomic switch
  124. Cation-based resistance change memory
  125. Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories
  126. Switching kinetics of electrochemical metallization memory cells
  127. An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing
  128. Bond nature of active metal ions in SiO2-based electrochemical metallization memory cells
  129. Preparation and characterization of GeSx thin-films for resistive switching memories
  130. Comment onReal-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte- Based ReRAM
  131. Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories
  132. Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory
  133. Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces
  134. Quantum conductance and switching kinetics of AgI-based microcrossbar cells
  135. Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide
  136. Redox processes in silicon dioxide thin films using copper microelectrodes
  137. Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
  138. Capacity based nondestructive readout for complementary resistive switches
  139. Electrochemical metallization memories—fundamentals, applications, prospects
  140. Electrochemical metallization memories—fundamentals, applications, prospects
  141. An EMF cell with a nitrogen solid electrolyte—on the transference of nitrogen ions in yttria-stabilized zirconia
  142. Electrochemical activation of molecular nitrogen at the Ir/YSZ interface
  143. Proton mobility in SiO2 thin films and impact of hydrogen and humidity on the resistive switching effect
  144. A Study of the Kinetics of the Electrochemical Deposition of Ce3+/Ce4+ Oxides
  145. Oxide nitrides: From oxides to solids with mobile nitrogen ions
  146. Thermodynamics, structure and kinetics in the system Ga–O–N
  147. Ionic and electronic conductivity of nitrogen-doped Yttrium-stabilized Zirconium single crystals.
  148. ChemInform Abstract: Defect Chemistry of the Cage Compound, Ca12Al14O33-δ- Understanding the Route from a Solid Electrolyte to a Semiconductor and Electride.
  149. Faradaic currents during electroforming of resistively switching Ag–Ge–Se type electrochemical metallization memory cells
  150. Defect chemistry of the cage compound, Ca12Al14O33−δ—understanding the route from a solid electrolyte to a semiconductor and electride
  151. Electrochemical Reactions in Nanoionics - Towards Future Resistive Switching Memories
  152. Electrocatalysts for bifunctional oxygen/air electrodes
  153. Electrode activation and degradation: Morphology changes of platinum electrodes on YSZ during electrochemical polarisation
  154. Defect Chemistry and Transport Properties of Nitrogen‐Doped YSZ
  155. A chemically driven insulator–metal transition in non-stoichiometric and amorphous gallium oxide
  156. Preparation of nitrogen-doped YSZ thin films by pulsed laser deposition and their characterization
  157. Kinetic studies of the electrochemical nitrogen reduction and incorporation into yttria stabilized zirconia
  158. Electrochemical Incorporation of Nitrogen into a Zirconia Solid Electrolyte
  159. Nitrogen Tracer Diffusion in Yttria Doped Zirconium Oxonitride
  160. Electrochemical Reduction and Incorporation of Nitrogen into Oxygen Conducting Oxides
  161. Electrochemical growth of thin La2O3 films on oxide and metal surfaces
  162. Study of the kinetics of processes during electrochemical deposition of zirconia from nonaqueous electrolytes
  163. Chemical composition and corrosion resistance of passive chromate films formed on stainless steels 316 L and 1.4301
  164. Electrochemical deposition of thin zirconia films on stainless steel 316 L