All Stories

  1. A photonically linked memristive neural network
  2. SrCoO3-δ and SrCo1-xTixO3-δ perovskites as electrocatalytic materials for oxygen evolution reaction in alkaline environment
  3. Dynamic Monolayer WSe2 Electrolyte‐Gated Transistor with Coexistent Double Relaxation Timescale for Enhanced Physical Reservoir Computing
  4. Advanced electrocatalyst for OER by laser treatment of BaCo-oxide powders
  5. Electrochemical ohmic memristors for continual learning
  6. Intrinsic, room temperature quantum resistance memristor for next generation zero-chain traceability SI standard
  7. Roadmap to neuromorphic computing with emerging technologies
  8. Random Projection‐Based Locality‐Sensitive Hashing in a Memristor Crossbar Array with Stochasticity for Sparse Self‐Attention‐Based Transformer
  9. Influence of active electrode impurity on memristive characteristics of ECM devices
  10. Electrochemical rewiring through quantum conductance effects in single metallic memristive nanowires
  11. Electrochemical ohmic memristors for continual learning
  12. Influence of moisture on the ferroelectric properties of sputtered hafnium oxide thin films
  13. Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices
  14. Memristive devices for metrological applications
  15. Microwave synthesis of molybdenene from MoS2
  16. Electrochemical‐Memristor‐Based Artificial Neurons and Synapses—Fundamentals, Applications, and Challenges
  17. Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems
  18. Simulating the filament morphology in electrochemical metallization cells
  19. Filament behaviour and stability in ECM memristive devices studied by electrochemical impedance spectroscopy
  20. Chemical Influence of Carbon Interface Layers in Metal/Oxide Resistive Switches
  21. Editorial: Focus issue on 2D materials for neuromorphic computing
  22. Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems
  23. Resistive switching and role of interfaces in memristive devices based on amorphous NbOx grown by anodic oxidation
  24. Experimental and Modeling Study of Metal–Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive Devices
  25. Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications (Adv. Mater. 32/2022)
  26. Rainer Waser – A Pioneer of Fundamentals of Resistive Switching Memories
  27. Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications
  28. Neuromorphic computing: current developments and future challenges
  29. Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage
  30. Memristive devices based on single ZnO nanowires—from material synthesis to neuromorphic functionalities
  31. Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalities
  32. Front Matter
  33. Design of Materials Configuration for Optimizing Redox‐Based Resistive Switching Memories
  34. Memristively programmable transistors
  35. Standards for the Characterization of Endurance in Resistive Switching Devices
  36. Structure‐Dependent Influence of Moisture on Resistive Switching Behavior of ZnO Thin Films
  37. Impact of moisture absorption on the resistive switching characteristics of a polyethylene oxide-based atomic switch
  38. Water-Mediated Ionic Migration in Memristive Nanowires with a Tunable Resistive Switching Mechanism
  39. Memristors with alloyed electrodes
  40. Brain‐Inspired Structural Plasticity through Reweighting and Rewiring in Multi‐Terminal Self‐Organizing Memristive Nanowire Networks
  41. Design of defect-chemical properties and device performance in memristive systems
  42. Copper facilitated nickel oxy-hydroxide films as efficient synergistic oxygen evolution electrocatalyst
  43. Nanoscale Electrochemical Studies: How Can We Use the Atomic Switch
  44. Nanowire Memristors: Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires (Adv. Electron. Mater. 9/2019)
  45. Ionic Modulation of Electrical Conductivity of ZnO Due to Ambient Moisture
  46. Electrolysis of Water at Atomically Tailored Epitaxial Cobaltite Surfaces
  47. Active Electrode Redox Reactions and Device Behavior in ECM Type Resistive Switching Memories
  48. Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires
  49. Silicon memristors go electric
  50. Resistivity control by the electrochemical removal of dopant atoms from a nanodot
  51. Electrochemically prepared oxides for resistive switching memories
  52. Preface
  53. Phase-change memories (PCM) – Experiments and modelling: general discussion
  54. Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion
  55. Synaptic and neuromorphic functions: general discussion
  56. Valence change ReRAMs (VCM) - Experiments and modelling: general discussion
  57. Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities
  58. Recommended Methods to Study Resistive Switching Devices
  59. Effects of Moisture and Redox Reactions in VCM and ECM Resistive Switching Memories
  60. Spring-Like Pseudoelectroelasticity of Monocrystalline Cu2S Nanowire
  61. Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?
  62. Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules
  63. Electrochemically prepared oxides for resistive switching devices
  64. Degradation Kinetics during Oxygen Electrocatalysis on Perovskite-Based Surfaces in Alkaline Media
  65. Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte Nanodots
  66. Processes and Effects of Oxygen and Moisture in Resistively Switching TaO x and HfO x
  67. Multibit memory operation of metal-oxide bi-layer memristors
  68. Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices
  69. Non-volatile memories: Organic memristors come of age
  70. Electrochemical Tantalum Oxide for Resistive Switching Memories
  71. Ordering and Phase Control in Epitaxial Double-Perovskite Catalysts for the Oxygen Evolution Reaction
  72. Anodic Oxides As Electrolytes for Resistive Switching Devices
  73. Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)
  74. Interfacial Metal–Oxide Interactions in Resistive Switching Memories
  75. Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory
  76. SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO2/Ag based systems
  77. Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride
  78. Oxide Thin Films for Memristive Devices
  79. Ionic conductivity of low yttria-doped cubic zirconium oxide nitride single crystals
  80. Stability and Degradation of Perovskite Electrocatalysts for Oxygen Evolution Reaction
  81. (Invited) Mobile Ions, Transport and Redox Processes in Memristive Devices
  82. (Invited) Mobile Ions, Transport and Redox Processes in Memristive Devices
  83. Humidity effects on the redox reactions and ionic transport in a Cu/Ta2O5/Pt atomic switch structure
  84. Electrochemical processes and device improvement in conductive bridge RAM cells (Phys. Status Solidi A 2∕2016)
  85. Resistive Switching Mechanisms on TaO x and SrRuO 3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy
  86. Electrochemical Metallization Memories
  87. Physics and Chemistry of Nanoionic Cells
  88. Electrochemistry at the Nanoscale
  89. Nanoscale electrochemistry using dielectric thin films as solid electrolytes
  90. PrxBa1-xCoO3Oxide Electrodes for Oxygen Evolution Reaction in Alkaline Solutions by Chemical Solution Deposition
  91. Electrochemical processes and device improvement in conductive bridge RAM cells
  92. Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
  93. Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOxBased Memristive Devices
  94. Processes and Limitations during Filament Formation and Dissolution in GeS x -based ReRAM Memory Cells
  95. Redox Reactions at Cu,Ag/Ta2O5Interfaces and the Effects of Ta2O5Film Density on the Forming Process in Atomic Switch Structures
  96. Modeling of Quantized Conductance Effects in Electrochemical Metallization Cells
  97. Understanding the conductive channel evolution in Na:WO3−x-based planar devices
  98. Influence of Graphene Interlayers on Electrode-Electrolyte Interfaces in Resistive Random Accesses Memory Cells
  99. Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches
  100. (Keynote) Atomic Scale and Interface Interactions in Redox-Based Resistive Switching Memories
  101. Inside Back Cover: Impact of the Counter-Electrode Material on Redox Processes in Resistive Switching Memories (ChemElectroChem 8/2014)
  102. Physical origins and suppression of Ag dissolution in GeSx-based ECM cells
  103. Impact of the Counter-Electrode Material on Redox Processes in Resistive Switching Memories
  104. Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
  105. Live demonstration: An associative capacitive network based on nanoscale complementary resistive switches
  106. Quantum size effects and non-equilibrium states in nanoscale silicon dioxide based resistive switches
  107. Statistical modeling of electrochemical metallization memory cells
  108. Nanobattery Effect in RRAMs—Implications on Device Stability and Endurance
  109. Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale
  110. Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures
  111. (Invited) The Role of Electrochemical Interfaces in ReRAM Memory Cells
  112. New insights into redox based resistive switches
  113. Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories
  114. Comment on “Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices”
  115. Simulation of polarity independent RESET in electrochemical metallization memory cells
  116. Nanosession: Electrochemical Metallization Memories
  117. Nanobatteries in redox-based resistive switches require extension of memristor theory
  118. Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta2O5 atomic switch
  119. Cation-based resistance change memory
  120. Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories
  121. Switching kinetics of electrochemical metallization memory cells
  122. An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing
  123. Bond nature of active metal ions in SiO2-based electrochemical metallization memory cells
  124. Preparation and characterization of GeSx thin-films for resistive switching memories
  125. Comment onReal-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte- Based ReRAM
  126. Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories
  127. Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory
  128. Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces
  129. Quantum conductance and switching kinetics of AgI-based microcrossbar cells
  130. Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide
  131. Redox processes in silicon dioxide thin films using copper microelectrodes
  132. Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
  133. Capacity based nondestructive readout for complementary resistive switches
  134. Electrochemical metallization memories—fundamentals, applications, prospects
  135. Electrochemical metallization memories—fundamentals, applications, prospects
  136. An EMF cell with a nitrogen solid electrolyte—on the transference of nitrogen ions in yttria-stabilized zirconia
  137. Electrochemical activation of molecular nitrogen at the Ir/YSZ interface
  138. Proton mobility in SiO2 thin films and impact of hydrogen and humidity on the resistive switching effect
  139. A Study of the Kinetics of the Electrochemical Deposition of Ce3+/Ce4+ Oxides
  140. Oxide nitrides: From oxides to solids with mobile nitrogen ions
  141. Thermodynamics, structure and kinetics in the system Ga–O–N
  142. Ionic and electronic conductivity of nitrogen-doped Yttrium-stabilized Zirconium single crystals.
  143. ChemInform Abstract: Defect Chemistry of the Cage Compound, Ca12Al14O33-δ- Understanding the Route from a Solid Electrolyte to a Semiconductor and Electride.
  144. Faradaic currents during electroforming of resistively switching Ag–Ge–Se type electrochemical metallization memory cells
  145. Defect chemistry of the cage compound, Ca12Al14O33−δ—understanding the route from a solid electrolyte to a semiconductor and electride
  146. Electrochemical Reactions in Nanoionics - Towards Future Resistive Switching Memories
  147. Electrocatalysts for bifunctional oxygen/air electrodes
  148. Electrode activation and degradation: Morphology changes of platinum electrodes on YSZ during electrochemical polarisation
  149. Defect Chemistry and Transport Properties of Nitrogen‐Doped YSZ
  150. A chemically driven insulator–metal transition in non-stoichiometric and amorphous gallium oxide
  151. Preparation of nitrogen-doped YSZ thin films by pulsed laser deposition and their characterization
  152. Kinetic studies of the electrochemical nitrogen reduction and incorporation into yttria stabilized zirconia
  153. Electrochemical Incorporation of Nitrogen into a Zirconia Solid Electrolyte
  154. Nitrogen Tracer Diffusion in Yttria Doped Zirconium Oxonitride
  155. Electrochemical Reduction and Incorporation of Nitrogen into Oxygen Conducting Oxides
  156. Electrochemical growth of thin La2O3 films on oxide and metal surfaces
  157. Study of the kinetics of processes during electrochemical deposition of zirconia from nonaqueous electrolytes
  158. Chemical composition and corrosion resistance of passive chromate films formed on stainless steels 316 L and 1.4301
  159. Electrochemical deposition of thin zirconia films on stainless steel 316 L