All Stories

  1. Formation of Alternating Epilayers of 4H-SiC and 3C-SiC by Simultaneous Lateral Epitaxy

    Article • Materials Science Forum, September 2025, Trans Tech Publications

    Masao Sakuraba

  2. SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure

    Article • Solid State Phenomena, August 2024, Trans Tech Publications

    Masao Sakuraba

  3. (Invited) Low-Energy Plasma Enhanced Chemical Vapor Deposition and In-Situ Doping for Junction Formation in Group-IV Semiconductor Devices

    Article • ECS Meeting Abstracts, September 2019, The Electrochemical Society

    Masao Sakuraba

  4. An Izhikevich Model Neuron MOS Circuit for Low Voltage Operation

    Article • January 2019, Springer Science + Business Media

    Masao Sakuraba

  5. Amphiphobic Septa Enhance the Mechanical Stability of Free-Standing Bilayer Lipid Membranes

    Article • Langmuir, April 2018, American Chemical Society (ACS)

    Prof Ryugo Tero, Masao Sakuraba

  6. Neuro-inspired quantum associative memory using adiabatic hamiltonian evolution

    Article • May 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Masao Sakuraba

  7. How does doping work in semiconductor? - Atomic layer doping examined by plasma process -

    Article • Science and Technology of Advanced Materials, April 2017, Taylor & Francis

    Masao Sakuraba

  8. Complexity Reduction of Neural Network Model for Local Motion Detection in Motion Stereo Vision

    Article • January 2017, Springer Science + Business Media

    Masao Sakuraba

  9. Quantum Associative Memory with Quantum Neural Network via Adiabatic Hamiltonian Evolution

    Article • IEICE Transactions on Information and Systems, January 2017, Institute of Electronics, Information and Communications Engineers (IEICE)

    Masao Sakuraba

  10. Silicon-Carbon alloy film formation on Si(100) using SiH4 and CH4 reaction under low-energy ECR Ar plasma irradiation

    Article • Materials Science in Semiconductor Processing, December 2016, Elsevier

    Masao Sakuraba

  11. Electrical properties and B depth profiles of in-situ B doped Si films grown by ECR Ar plasma CVD without substrate heating

    Article • Materials Science in Semiconductor Processing, October 2016, Elsevier

    Masao Sakuraba

  12. Electronic properties of Si/Si-Ge Alloy/Si(100) heterostructures formed by ECR Ar plasma CVD without substrate heating

    Article • Materials Science in Semiconductor Processing, October 2016, Elsevier

    Masao Sakuraba

  13. C and Si delta doping in Ge by CH3SiH3 using reduced pressure chemical vapor deposition

    Article • Thin Solid Films, March 2016, Elsevier

    Masao Sakuraba

  14. Effects of interfacial chemical states on the performance of perovskite solar cells

    Article • Journal of Materials Chemistry A, January 2016, Royal Society of Chemistry

    Masao Sakuraba

  15. CMOS Majority Circuit with Large Fan-In

    Article • IEICE Transactions on Electronics, January 2016, Institute of Electronics, Information and Communications Engineers (IEICE)

    Masao Sakuraba

  16. Hydrogen Atom Desorption Induced by Electron Bombardment on Si Surface

    Article • ECS Transactions, December 2015, The Electrochemical Society

    Masao Sakuraba

  17. Structure and optical properties of Si and SiGe layers grown on SiO2 by chemical vapor deposition

    Article • Thin Solid Films, March 2015, Elsevier

    Masao Sakuraba

  18. Izhikevich neuron circuit using stochastic logic

    Article • Electronics Letters, November 2014, the Institution of Engineering and Technology (the IET)

    Masao Sakuraba

  19. Atomically controlled processing for nitrogen doping of group IV semiconductors

    Article • October 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Masao Sakuraba

  20. Surface Reaction in Thin Film Formation of Si1－xGex Alloys on Si(100) by Electron-Cyclotron-Resonance Ar Plasma Chemical Vapor Deposition without Substrate Heating

    Article • ECS Transactions, August 2014, The Electrochemical Society

    Masao Sakuraba

  21. Majority neuron circuit having large fan-in with non-volatile synaptic weight

    Article • July 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Masao Sakuraba

  22. Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si1-xGex/Si resonant tunneling diode

    Article • Thin Solid Films, April 2014, Elsevier

    Masao Sakuraba

  23. Epitaxial growth of Si1−xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating

    Article • Thin Solid Films, April 2014, Elsevier

    Masao Sakuraba

  24. Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4–B2H6–H2 gas mixture without substrate heating

    Article • Thin Solid Films, April 2014, Elsevier

    Masao Sakuraba

  25. (Invited) Atomic-Order Thermal Nitridation of Si, Si1-xGex and Ge by NH3

    Article • ECS Transactions, March 2014, The Electrochemical Society

    Masao Sakuraba

  26. (Invited) Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing

    Article • ECS Transactions, August 2013, The Electrochemical Society

    Masao Sakuraba

  27. Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating

    Article • ECS Transactions, August 2013, The Electrochemical Society

    Masao Sakuraba

  28. Formation and Characterization of Strained Si1-XGex Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating

    Article • ECS Transactions, August 2013, The Electrochemical Society

    Masao Sakuraba

  29. (Invited) Atomically Controlled CVD Processing of Group IV Semiconductors for Strain Engineering and Doping in Ultralarge Scale Integration

    Article • ECS Transactions, June 2013, The Electrochemical Society

    Masao Sakuraba

  30. (Invited) Strain Control of Si and Si1-x-yGexCy Layers in Si/Si1-x-yGexCy/Si Heterostructures by Low-Pressure Chemical Vapor Deposition

    Article • ECS Transactions, March 2013, The Electrochemical Society

    Masao Sakuraba

  31. X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures

    Article • IEICE Transactions on Electronics, January 2013, Institute of Electronics, Information and Communications Engineers (IEICE)

    Masao Sakuraba

  32. Atomically controlled CVD technology of group IV semiconductors for ultralarge scale integration

    Article • October 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Masao Sakuraba

  33. Strain Control of Si and Si1-yCy Layers in Si/Si1-yCy/Si(100) Heterostructures

    Article • June 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Masao Sakuraba

  34. Atomically controlled CVD processing of group IV semiconductors for ultra-large-scale integrations

    Article • Advances in Natural Sciences Nanoscience and Nanotechnology, March 2012, Institute of Physics Publishing

    Masao Sakuraba

  35. Behavior of N atoms after thermal nitridation of Si1−xGex surface

    Article • Thin Solid Films, February 2012, Elsevier

    Masao Sakuraba

  36. Atomically Controlled Processing in Silicon-Based CVD Epitaxial Growth

    Article • Journal of Nanoscience and Nanotechnology, September 2011, American Scientific Publishers

    Masao Sakuraba

  37. Fabrication of high-Ge-fraction strained Si1−xGex/Si hole resonant tunneling diode using low-temperature Si2H6 reaction for nanometer-order ultrathin Si barriers

    Article • Solid-State Electronics, June 2011, Elsevier

    Masao Sakuraba

  38. Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation

    Article • Key Engineering Materials, February 2011, Trans Tech Publications

    Masao Sakuraba

  39. Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs

    Article • Key Engineering Materials, February 2011, Trans Tech Publications

    Masao Sakuraba

  40. Atomically Controlled Formation of Strained Si

    Article • January 2011, The Electrochemical Society

    Masao Sakuraba

  41. Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors

    Article • January 2011, The Electrochemical Society

    Masao Sakuraba

  42. (Invited) Atomically Controlled CVD Processing for Doping in Future Si-Based Devices

    Article • January 2011, The Electrochemical Society

    Masao Sakuraba

  43. Atomically controlled plasma processing for epitaxial growth of group IV semiconductors

    Article • November 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Masao Sakuraba

  44. Atomically controlled processing in strained Si-based CVD epitaxial growth

    Article • November 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Masao Sakuraba

  45. Room-Temperature Resonant Tunneling Diode with High-Ge-Fraction Strained Si

    Article • January 2010, The Electrochemical Society

    Masao Sakuraba

  46. Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating

    Article • Thin Solid Films, January 2010, Elsevier

    Masao Sakuraba

  47. Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVD

    Article • Thin Solid Films, January 2010, Elsevier

    Masao Sakuraba

  48. Heavy atomic-layer doping of nitrogen in Si1−xGex film epitaxially grown on Si(100) by ultraclean low-pressure CVD

    Article • Thin Solid Films, January 2010, Elsevier

    Masao Sakuraba

  49. Heavy carbon atomic-layer doping at Si1−xGex/Si heterointerface

    Article • Thin Solid Films, January 2010, Elsevier

    Masao Sakuraba

  50. Impact of Si cap layer growth on surface segregation of P incorporated by atomic layer doping

    Article • Thin Solid Films, January 2010, Elsevier

    Masao Sakuraba

  51. Improvement in negative differential conductance characteristics of hole resonant-tunneling diodes with high Ge fraction Si/strained Si1−xGex/Si(100) heterostructure

    Article • Solid-State Electronics, August 2009, Elsevier

    Masao Sakuraba

  52. Heavy B atomic-layer doping characteristics in Si epitaxial growth on B adsorbed Si(100) by ultraclean low-pressure CVD system

    Article • Solid-State Electronics, August 2009, Elsevier

    Masao Sakuraba

  53. Atomically Controlled Processing for Group IV Semiconductors

    Article • January 2009, The Electrochemical Society

    Masao Sakuraba

  54. Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductor Nanostructures

    Article • January 2009, The Electrochemical Society

    Masao Sakuraba

  55. Atomically Controlled CVD Processing for Doping of Si-Based Group IV Semiconductors

    Article • January 2009, The Electrochemical Society

    Masao Sakuraba

  56. High-performance SiGe-channel pMOSFETs realized by self-aligned epitaxy process

    Article • Electrical Engineering in Japan, November 2008, Wiley

    Masao Sakuraba

  57. Very low-temperature epitaxial growth of silicon and germanium using plasma-assisted CVD

    Article • Thin Solid Films, November 2008, Elsevier

    Masao Sakuraba

  58. High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth

    Article • Thin Solid Films, November 2008, Elsevier

    Masao Sakuraba

  59. Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si1−xGex/Si(100) heterostructure

    Article • Thin Solid Films, November 2008, Elsevier

    Masao Sakuraba

  60. Si epitaxial growth on self-limitedly B adsorbed Si1−xGex(100) by ultraclean low-pressure CVD system

    Article • Thin Solid Films, November 2008, Elsevier

    Masao Sakuraba

  61. Structural change of atomic-order nitride formed on Si1−xGex(100) and Ge(100) by heat treatment

    Article • Thin Solid Films, November 2008, Elsevier

    Masao Sakuraba

  62. Local strain in Si/Si0.6Ge0.4/Si(100) heterostructures by stripe-shape patterning

    Article • Thin Solid Films, November 2008, Elsevier

    Masao Sakuraba

  63. Atomically controlled CVD processing for future Si-based devices

    Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Masao Sakuraba

  64. Self-limited growth of Si on B atomic-layer formed Ge(100) by ultraclean low-pressure CVD system

    Article • Applied Surface Science, July 2008, Elsevier

    Masao Sakuraba

  65. Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x>0.4) Si/strained Si1−xGex/Si(100) heterostructure

    Article • Applied Surface Science, July 2008, Elsevier

    Masao Sakuraba

  66. Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(100) by ultraclean low-pressure chemical vapor deposition

    Article • Applied Surface Science, July 2008, Elsevier

    Masao Sakuraba

  67. Behavior of N atoms in atomic-order nitrided Si0.5Ge0.5(100)

    Article • Applied Surface Science, July 2008, Elsevier

    Masao Sakuraba

  68. Hot Carrier Degradation of SiGe/Si Heterointerface and Experimental Estimation of Density of Locally Generated Heterointerface Traps

    Article • Japanese Journal of Applied Physics, August 2007, Japan Society of Applied Physics

    Masao Sakuraba

  69. Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si

    Article • January 2007, The Electrochemical Society

    Masao Sakuraba

  70. Strain Control of Si and Si

    Article • January 2007, The Electrochemical Society

    Masao Sakuraba

  71. Epitaxial growth of P atomic layer doped Si film by alternate surface reactions of PH3 and Si2H6 on strained Si1−xGex/Si(1 0 0) in ultraclean low-pressure CVD

    Article • Semiconductor Science and Technology, December 2006, Institute of Physics Publishing

    Masao Sakuraba

  72. Hole tunnelling properties in resonant tunnelling diodes with Si/strained Si0.8Ge0.2 heterostructures grown on Si(1 0 0) by low-temperature ultraclean LPCVD

    Article • Semiconductor Science and Technology, November 2006, Institute of Physics Publishing

    Masao Sakuraba

  73. Epitaxial growth of highly strained Si on relaxed Ge/Si(1 0 0) using ECR plasma CVD without substrate heating

    Article • Semiconductor Science and Technology, November 2006, Institute of Physics Publishing

    Masao Sakuraba

  74. Carbon doping effect on strain relaxation during Si1−x−yGexCy epitaxial growth on Si(1 0 0) at 500 °C

    Article • Semiconductor Science and Technology, November 2006, Institute of Physics Publishing

    Masao Sakuraba

  75. Strain control and electrical properties of stripe-patterned Si/Si1−xGex/Si(1 0 0) heterostructures

    Article • Semiconductor Science and Technology, November 2006, Institute of Physics Publishing

    Masao Sakuraba

  76. Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

    Article • Japanese Journal of Applied Physics, September 2006, Japan Society of Applied Physics

    Masao Sakuraba

  77. Photo detection characteristics of Si/Si1−xGex/Si p-i-n diodes integrated with optical waveguides

    Article • Thin Solid Films, June 2006, Elsevier

    Masao Sakuraba

  78. Thermal effect on strain relaxation in Ge films epitaxially grown on Si(100) using ECR plasma CVD

    Article • Thin Solid Films, June 2006, Elsevier

    Masao Sakuraba

  79. Effect of grain boundary on electrical characteristics in B- and P-doped polycrystalline Si1−x−yGexCy film deposited by ultraclean LPCVD

    Article • Thin Solid Films, June 2006, Elsevier

    Masao Sakuraba

  80. Surface reaction and B atom segregation in ECR chlorine plasma etching of B-doped Si1−xGex epitaxial films

    Article • Thin Solid Films, June 2006, Elsevier

    Masao Sakuraba

  81. Strain relaxation by stripe patterning in Si/Si1−xGex/Si(100) heterostructures

    Article • Thin Solid Films, June 2006, Elsevier

    Masao Sakuraba

  82. Characterization of hot-carrier degraded SiGe/Si-hetero-PMOSFETs

    Article • Thin Solid Films, June 2006, Elsevier

    Masao Sakuraba

  83. Carbon effect on strain compensation in Si1−x−yGexCy films epitaxially grown on Si(100)

    Article • Thin Solid Films, June 2006, Elsevier

    Masao Sakuraba

  84. A Study on B Atomic Layer Formation for B-Doped Si

    Article • January 2006, The Electrochemical Society

    Masao Sakuraba

  85. Hetero-Interface-Trap Generation due to Hot Carriers in SiGe/Si-Hetero-MOSFETs

    Article • IEEJ Transactions on Electronics Information and Systems, January 2006, Institute of Electrical Engineers of Japan (IEE Japan)

    Masao Sakuraba

  86. Atomic-Order Thermal Nitridation of Si

    Article • January 2006, The Electrochemical Society

    Masao Sakuraba

  87. Atomically controlled CVD technology for group IV semiconductors

    Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Masao Sakuraba

  88. Strain Control of Stripe Patterned Si/Si

    Article • January 2006, The Electrochemical Society

    Masao Sakuraba

  89. Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications

    Article • IEICE Transactions on Electronics, April 2005, Institute of Electronics, Information and Communications Engineers (IEICE)

    Masao Sakuraba

  90. Atomically controlled Ge epitaxial growth on Si(100) in Ar-plasma-enhanced GeH4 reaction

    Article • Materials Science in Semiconductor Processing, February 2005, Elsevier

    Masao Sakuraba

  91. Si epitaxial growth on atomic-order nitrided Si(100) using electron cyclotron resonance plasma

    Article • Materials Science in Semiconductor Processing, February 2005, Elsevier

    Masao Sakuraba

  92. Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition

    Article • Materials Science in Semiconductor Processing, February 2005, Elsevier

    Masao Sakuraba

  93. Integration of Si p–i–n diodes for light emitter and detector with optical waveguides

    Article • Materials Science in Semiconductor Processing, February 2005, Elsevier

    Masao Sakuraba

  94. Sidewall protection by nitrogen and oxygen in poly-Si1−xGex anisotropic etching using Cl2/N2/O2 plasma

    Article • Materials Science in Semiconductor Processing, February 2005, Elsevier

    Masao Sakuraba

  95. Electrical properties of W delta doped Si epitaxial films grown on Si(100) by ultraclean low-pressure chemical vapor deposition

    Article • Materials Science in Semiconductor Processing, February 2005, Elsevier

    Masao Sakuraba

  96. Separation by bonding Si Islands (SBSI) for LSI applications

    Article • Materials Science in Semiconductor Processing, February 2005, Elsevier

    Masao Sakuraba

  97. Article • Shinku, January 2005, The Vacuum Society of Japan

    Masao Sakuraba

  98. Si self-diffusivity using isotopically pure 30Si epitaxial layers

    Article • Materials Science and Engineering B, December 2004, Elsevier

    Masao Sakuraba

  99. Ar plasma irradiation effects in atomically controlled Si epitaxial growth

    Article • Applied Surface Science, March 2004, Elsevier

    Masao Sakuraba

  100. Fabrication of 0.12 μm pMOSFETs on high Ge fraction Si/Si1−xGex/Si(1 0 0) heterostructure with ultrashallow source/drain formed using B-doped SiGe CVD

    Article • Applied Surface Science, March 2004, Elsevier

    Masao Sakuraba

  101. Formation of heavily P-doped Si epitaxial film on Si(100) by multiple atomic-layer doping technique

    Article • Applied Surface Science, March 2004, Elsevier

    Masao Sakuraba

  102. Effect of carbon on the thermal stability of a Si atomic layer on Ge(1 0 0)

    Article • Applied Surface Science, March 2004, Elsevier

    Masao Sakuraba

  103. Relationship between impurity (B or P) and carrier concentration in SiGe(C) epitaxial film produced by thermal treatment

    Article • Applied Surface Science, March 2004, Elsevier

    Masao Sakuraba

  104. Epitaxial growth of N delta doped Si films on Si(1 0 0) by alternately supplied NH3 and SiH4

    Article • Applied Surface Science, March 2004, Elsevier

    Masao Sakuraba

  105. Proposal of a multi-layer channel MOSFET: the application of selective etching for Si/SiGe stacked layers

    Article • Applied Surface Science, March 2004, Elsevier

    Masao Sakuraba

  106. Atomically Controlled Technology for Future Si-Based Devices

    Article • Solid State Phenomena, January 2004, Trans Tech Publications

    Masao Sakuraba

  107. Atomically Controlled Impurity Doping in Si-Based CVD Epitaxial Growth

    Article • MRS Proceedings, January 2004, Cambridge University Press

    Masao Sakuraba

  108. Atomic-layer doping in Si by alternately supplied NH3 and SiH4

    Article • Applied Physics Letters, May 2003, American Institute of Physics

    Masao Sakuraba

  109. Si atomic layer-by-layer epitaxial growth process using alternate exposure of Si(1 0 0) to SiH4 and to Ar plasma

    Article • Applied Surface Science, May 2003, Elsevier

    Masao Sakuraba

  110. Si epitaxial growth on SiH3CH3 reacted Ge(1 0 0) and intermixing between Si and Ge during heat treatment

    Article • Applied Surface Science, May 2003, Elsevier

    Masao Sakuraba

  111. Contact resistivity between tungsten and impurity (P and B)-doped Si1−x−yGexCy epitaxial layer

    Article • Applied Surface Science, May 2003, Elsevier

    Masao Sakuraba

  112. Work function of impurity-doped polycrystalline Si1−x−yGexCy film deposited by ultraclean low-pressure CVD

    Article • Applied Surface Science, May 2003, Elsevier

    Masao Sakuraba

  113. W delta doping in Si(1 0 0) using ultraclean low-pressure CVD

    Article • Applied Surface Science, May 2003, Elsevier

    Masao Sakuraba

  114. Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH4 Reaction

    Article • January 2003, Elsevier

    Masao Sakuraba

  115. Heavy Doping Characteristics of Si Films Epitaxially Grown at 450°C by Alternately Supplied PH3 and SiH4

    Article • January 2003, Elsevier

    Masao Sakuraba

  116. Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1−xGex CVD

    Article • Materials Science and Engineering B, February 2002, Elsevier

    Masao Sakuraba

  117. 0.1 μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers

    Article • January 2002, Japan Society of Applied Physics

    Masao Sakuraba

  118. Atomically controlled processing for group IV semiconductors

    Article • Surface and Interface Analysis, January 2002, Wiley

    Masao Sakuraba

  119. Thermal nitridation of ultrathin SiO2 on Si by NH3

    Article • Surface and Interface Analysis, January 2002, Wiley

    Masao Sakuraba

  120. Atomic-order thermal nitridation of Si(100) and subsequent growth of Si

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, July 2001, American Vacuum Society

    Masao Sakuraba

  121. Phosphorus Doping in Si1-x-yGexCyEpitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH4–GeH4–CH3SiH3–PH3–H2Gas System

    Article • Japanese Journal of Applied Physics, April 2001, Japan Society of Applied Physics

    Masao Sakuraba

  122. Doping and electrical characteristics of in-situ heavily B-doped Si1−x−yGexCy films epitaxially grown using ultraclean LPCVD

    Article • Thin Solid Films, December 2000, Elsevier

    Masao Sakuraba

  123. Atomic-layer doping in Si by alternately supplied PH3 and SiH4

    Article • Thin Solid Films, December 2000, Elsevier

    Masao Sakuraba

  124. Effect of Si/Si1-yCy/Si Barriers on the Characteristics of Si1-xGex/Si Resonant Tunneling Structures

    Article • Chinese Physics Letters, November 2000, Institute of Physics Publishing

    Masao Sakuraba

  125. Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition

    Article • Applied Surface Science, August 2000, Elsevier

    Masao Sakuraba

  126. Surface reaction of CH3SiH3 on Ge(100) and Si(100)

    Article • Applied Surface Science, August 2000, Elsevier

    Masao Sakuraba

  127. Drain leakage current and instability of drain current in Si/Si 1−x Ge x MOSFETs

    Article • Thin Solid Films, July 2000, Elsevier

    Masao Sakuraba

  128. Epitaxial growth of Si 1−x−y Ge x C y film on Si(100) in a SiH 4 -GeH 4 -CH 3 SiH 3 reaction

    Article • Thin Solid Films, July 2000, Elsevier

    Masao Sakuraba

  129. Segregation and diffusion of impurities from doped Si1−Ge films into silicon

    Article • Thin Solid Films, July 2000, Elsevier

    Masao Sakuraba

  130. Observation of sharp current peaks in resonant tunneling diode with strained Si0.6Ge0.4/Si(100) grown by low-temperature low-pressure CVD

    Article • Journal of Crystal Growth, February 2000, Elsevier

    Masao Sakuraba

  131. Segregation and diffusion of phosphorus from doped Si1−xGex films into silicon

    Article • Journal of Applied Physics, November 1999, American Institute of Physics

    Masao Sakuraba

  132. CVD Si 1-x Ge x epitaxial growth and its applications to MOS devices

    Article • September 1999, SPIE

    Masao Sakuraba

  133. Layer-by-layer growth of silicon nitride films by NH3 and SiH4

    Article • Le Journal de Physique Colloques, September 1999, EDP Sciences

    Masao Sakuraba

  134. Doping and electrical characteristics of in situ heavily B-doped Si1−xGex films epitaxially grown using ultraclean LPCVD

    Article • Thin Solid Films, April 1999, Elsevier

    Masao Sakuraba

  135. Separation between Surface Adsorption and Reaction of NH3on Si(100) by Flash Heating

    Article • Japanese Journal of Applied Physics, January 1999, Japan Society of Applied Physics

    Masao Sakuraba

  136. Atomic‐Order Thermal Nitridation of Silicon at Low Temperatures

    Article • Journal of The Electrochemical Society, December 1998, The Electrochemical Society

    Masao Sakuraba

  137. Low-temperature reaction of CH4 on Si(1 0 0)

    Article • Journal of Crystal Growth, June 1998, Elsevier

    Masao Sakuraba

  138. Atomic-Layer Surface Reaction ofSiH4on Ge(100)

    Article • Japanese Journal of Applied Physics, June 1997, Japan Society of Applied Physics

    Masao Sakuraba

  139. Initial growth characteristics of germanium on silicon in LPCVD using germane gas

    Article • Journal of Crystal Growth, April 1997, Elsevier

    Masao Sakuraba

  140. Atomic Layer-by-Layer Epitaxy of Silicon and Germanium Using Flash Heating in CVD

    Article • Le Journal de Physique Colloques, June 1995, EDP Sciences

    Masao Sakuraba

  141. Atomic-layer epitaxy control of Ge and Si in flash-heating CVD using GeH4 and SiH4 gases

    Article • Applied Surface Science, December 1994, Elsevier

    Masao Sakuraba

  142. Stability of the dimer structure formed on Si(100) by ultraclean low‐pressure chemical‐vapor deposition

    Article • Journal of Applied Physics, April 1994, American Institute of Physics

    Masao Sakuraba

  143. Initial Growth Stages of Si on Ge and Ge on Si for Atomic-Layer Epitaxy Control Using SiH4 and GeH4 Gases

    Article • January 1994, Japan Society of Applied Physics

    Masao Sakuraba

  144. Silicon atomic layer growth using flash heating in CVD

    Article • Le Journal de Physique Colloques, August 1993, EDP Sciences

    Masao Sakuraba

  145. Silicon atomic layer growth controlled by flash heating in chemical vapor deposition using SiH4gas

    Article • Applied Physics Letters, May 1993, American Institute of Physics

    Masao Sakuraba

  146. Stability of the Si(100) Surface Epitaxially Grown by CVD

    Article • January 1993, Japan Society of Applied Physics

    Masao Sakuraba

  147. Atomic layer epitaxy of germanium on silicon using flash heating chemical vapor deposition

    Article • Journal of Crystal Growth, December 1991, Elsevier

    Masao Sakuraba

  148. Atomic Layer Control of Germanium and Silicon on Silicon Using Flash Heating in Ultraclean Chemical Vapor Deposition

    Article • January 1991, Japan Society of Applied Physics

    Masao Sakuraba

  149. Epitaxial Growth of Highly Strained Si on Relaxed Ge/Si

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Masao Sakuraba

  150. Atomically controlled impurity doping for future Si-based devices

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Masao Sakuraba

  151. Epitaxial Growth of Highly Strained Si on Relaxed Ge/Si

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Masao Sakuraba

  152. Hot carrier reliability of a SiGe/Si hetero-interface in SiGe MOSFETs

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Masao Sakuraba

  153. Atomically controlled processing for future Si-based devices

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Masao Sakuraba

  154. SiGe-channel 0.1-μm pMOSFETs with super self-aligned ultra-shallow junction formed by selective in-situ B-doped SiGe CVD

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Masao Sakuraba

  155. CVD SiGe(C) epitaxial growth and its application to MOS devices

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Masao Sakuraba