What is it about?
Carrier properties for B (boron) atomic-layer (AL)-doped Si (silicon) films with suppressed thermal diffusion was described. It was demonstrated that B AL-doped Si films were formed on Si(100) by B AL formation followed by Si cap layer deposition in low-energy Ar plasma-enhanced chemical-vapor deposition without substrate heating. With B concentration depth profiles as steep as 1.3 nm/decade, dominant carrier was a hole and the maximum sheet carrier densities as high as 4 × 10^13 cm^−2 and 2 × 10^13 cm^−2 (electrical activity ratio of about 7% and 3.5%) were measured respectively for the unstrained and 0.8%-tensile-strained Si with Hall mobility around 10–13 cm^2 V^−1 s^−1.
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Why is it important?
The AL-doping technique in epitaxy has attracted attention as a low-resistive ultrathin semiconductor film as well as a two-dimensional (2-D) carrier transport system. Detailed B depth profiles and behavior of carrier properties in the B AL-doped Si films were investigated in order to explore their potential for semiconductor device applications. There is a possibility that 2-D impurity-band formation with strong Coulomb interaction is expected.
Perspectives
From the viewpoint of semiconductor device application, for example, introduction of such AL doping in the Esaki-tunnel diode is expected to increase a local built-in potential at a p-n junction and to contribute to enhancement and uniformity of interband-tunnel current.
Masao Sakuraba
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This page is a summary of: Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating, Science and Technology of Advanced Materials, April 2017, Taylor & Francis,
DOI: 10.1080/14686996.2017.1312520.
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