What is it about?
It is clarified that the Super Self-aligned Shallow junction Electrode (S3E) pMOSFETs with Si0.65Ge0.35 channel are realized not only with suppression of punchthrough due to the ultrashallow B-diffused source/drain but also with enhancement of maximum linear transconductance due to the low parasitic resistance, compared to that with the Si channel fabricated by the same process conditions.
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Why is it important?
The improvement of current drivability and shortchannel effect is very important for ultrasmall MOS device technology. SiGe-channel pMOSFETs are one of the most promising devices because hole mobility in the SiGe layers is enhanced.
Perspectives
Using this technology, we implemented an advanced MOS device offering strong current drive and reduced short-channel effect at a gate length of 0.12 um.
Masao Sakuraba
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This page is a summary of: High-performance pMOSFETs with high Ge fraction strained SiGe-heterostructure channel and ultrashallow source/drain formed by selective B-doped SiGe CVD, Electrical Engineering in Japan, November 2008, Wiley,
DOI: 10.1002/eej.20597.
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