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This page is a summary of: Epitaxial growth of P atomic layer doped Si film by alternate surface reactions of PH3 and Si2H6 on strained Si1−xGex/Si(1 0 0) in ultraclean low-pressure CVD, Semiconductor Science and Technology, December 2006, Institute of Physics Publishing,
DOI: 10.1088/0268-1242/22/1/s28.
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