All Stories

  1. Morphological design of complex oxides during pulsed-laser deposition: The role of plasma-plume expansion

    Article • Journal of Applied Physics, November 2019, American Institute of Physics

    Ilan Shalish, Rachel Goldman

  2. Surface states in AlGaN/GaN high electron mobility transistors: Quantitative energetic profiles and dynamics of the surface Fermi level

    Article • Applied Physics Letters, July 2019, American Institute of Physics

    Ilan Shalish

  3. Effect Of Parasitic Polytypes On Ballistic Electron Transport In Chemical Vapor Deposition Grown 6H-SiC Epitaxial Layers

    Article • Advanced Materials Letters, July 2019, VBRI Press

    Ilan Shalish

  4. Polar-charge-induced self-assembly: Electric effect that causes nonisotropic nanorod growth in wurtzite semiconductors

    Article • Physical Review Materials, March 2019, American Physical Society (APS)

    Ilan Shalish

  5. Mobility and Sheet Charge in High-Electron Mobility Transistor Quantum Wells From Photon-Induced Transconductance

    Article • IEEE Electron Device Letters, March 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Ilan Shalish

  6. Franz-Keldysh effect in semiconductor built-in fields: Doping concentration and space charge region characterization

    Article • Journal of Applied Physics, August 2018, American Institute of Physics

    Ilan Shalish

  7. Fast estimation of channel temperature in GaN high electron mobility transistor under rf operating conditions

    Article • Semiconductor Science and Technology, July 2018, Institute of Physics Publishing

    Ilan Shalish

  8. Digenite (Cu9S5): Layered p-Type Semiconductor Grown by Reactive Annealing of Copper

    Article • Chemistry of Materials, March 2018, American Chemical Society (ACS)

    Ilan Shalish

  9. Probing dynamic behavior of electric fields and band diagrams in complex semiconductor heterostructures

    Article • Journal of Applied Physics, January 2018, American Institute of Physics

    Ilan Shalish

  10. Contactless Method to Measure 2DEG Charge Density and Band Structure in HEMT Structures

    Article • IEEE Journal of the Electron Devices Society, January 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Ilan Shalish

  11. Double surface effect causes a peak in band-edge photocurrent spectra: a quantitative model

    Article • Journal of Physics D Applied Physics, August 2016, Institute of Physics Publishing

    Ilan Shalish

  12. Corrigendum: Method for electrical characterization of nanowires (2011Nanotechnology22 435705)

    Article • Nanotechnology, July 2016, Institute of Physics Publishing

    Ilan Shalish

  13. CMOS-compatible method for doping of buried vertical polysilicon structures by solid phase diffusion

    Article • Applied Physics Letters, March 2016, American Institute of Physics

    Ilan Shalish

  14. ZnO surface decomposes by light in a reversible persistent process creating surface oxygen vacancies

    Article • Journal of Applied Physics, January 2014, American Institute of Physics

    Ilan Shalish

  15. Remedy for electrostatic discharge damage of nanowire devices

    Article • Journal of Applied Physics, June 2012, American Institute of Physics

    Ilan Shalish

  16. Bandgap of Wurtzite (Hexagonal) form of GaAs

    Article • Applied Physics Letters, May 2012, American Institute of Physics

    Ilan Shalish

  17. Method for electrical characterization of nanowires

    Article • Nanotechnology, October 2011, Institute of Physics Publishing

    Ilan Shalish

  18. Photoinduced oxygen release and persistent photoconductivity in ZnO nanowires

    Article • Nanoscale Research Letters, May 2011, Springer Science + Business Media

    Ilan Shalish

  19. Room-temperature photoresponse of Schottky photodiodes based on GaNxAs1−x synthesized by ion implantation and pulsed-laser melting

    Article • Applied Physics Letters, October 2010, American Institute of Physics

    Ilan Shalish

  20. Size-dependent impurity activation energy in GaN nanowires

    Article • Applied Physics Letters, April 2009, American Institute of Physics

    Ilan Shalish

  21. Epitaxial Catalyst-Free Growth of InN Nanorods onc-Plane Sapphire

    Article • Nanoscale Research Letters, February 2009, Springer Science + Business Media

    Ilan Shalish

  22. A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection

    Article • Nanotechnology, September 2007, Institute of Physics Publishing

    Ilan Shalish

  23. Electroluminescence from single nanowires by tunnel injection: an experimental study

    Article • Nanotechnology, May 2007, Institute of Physics Publishing

    Ilan Shalish

  24. Catalytic hydride vapour phase epitaxy growth of GaN nanowires

    Article • Nanotechnology, August 2005, Institute of Physics Publishing

    Ilan Shalish

  25. Imaging Defects in Nanometer-scale Semiconductor Crystals: Statistical Nucleation Events are Few in Small Crystals, but can Control Growth

    Article • Microscopy and Microanalysis, August 2005, Oxford University Press (OUP)

    Ilan Shalish

  26. Ballistic hole emission luminescence

    Article • Applied Physics Letters, September 2004, American Institute of Physics

    Ilan Shalish

  27. Size-dependent surface luminescence in ZnO nanowires

    Article • Physical Review B, June 2004, American Physical Society (APS)

    Ilan Shalish

  28. Experimental test of the planar tunneling model for ballistic electron emission spectroscopy

    Article • April 2003, American Physical Society (APS)

    Ilan Shalish

  29. Effect of Van Hove singularities on the photovoltage spectra of semiconductors

    Article • October 2002, American Physical Society (APS)

    Ilan Shalish

  30. Observations of conduction-band structure of4H- and6H−SiC

    Article • February 2002, American Physical Society (APS)

    Ilan Shalish

  31. Hall photovoltage deep-level spectroscopy of GaN films

    Article • November 2001, American Physical Society (APS)

    Ilan Shalish

  32. Photoinduced charge carriers at surfaces and interfaces of poly[2−methoxy−5−(2′−ethyl−hexyloxy)−1,4−phenylenevinylene]with Au and GaAs

    Article • June 2001, American Physical Society (APS)

    Ilan Shalish

  33. Surface states and surface oxide in GaN layers

    Article • Journal of Applied Physics, January 2001, American Institute of Physics

    Ilan Shalish

  34. Thermal stability of Re Schottky contacts to 6H-SiC

    Article • IEEE Electron Device Letters, December 2000, Institute of Electrical & Electronics Engineers (IEEE)

    Ilan Shalish

  35. Thermal stability of Pt Schottky contacts to 4H–SiC

    Article • Journal of Applied Physics, November 2000, American Institute of Physics

    Ilan Shalish

  36. Yellow luminescence and Fermi level pinning in GaN layers

    Article • Applied Physics Letters, August 2000, American Institute of Physics

    Ilan Shalish

  37. Grain-boundary-controlled transport in GaN layers

    Article • June 2000, American Physical Society (APS)

    Ilan Shalish

  38. Stability of Schottky contacts with Ta–Si–N amorphous diffusion barriers and Au overlayers on 6H–SiC

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 2000, American Vacuum Society

    Ilan Shalish

  39. Yellow luminescence and related deep levels in unintentionally doped GaN films

    Article • April 1999, American Physical Society (APS)

    Ilan Shalish

  40. Thermal stability of a Ti-Si-N diffusion barrier in contact with a Ti adhesion layer for Au metallization

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 1999, American Vacuum Society

    Ilan Shalish

  41. Gold metallization for aluminum nitride

    Article • Thin Solid Films, November 1996, Elsevier

    Ilan Shalish

  42. Depth efficient neural networks for division and related problems

    Article • IEEE Transactions on Information Theory, May 1993, Institute of Electrical & Electronics Engineers (IEEE)

    Ilan Shalish