All Stories

  1. Onset of tetrahedral interstitial formation in GaAsN alloys

    Article • Applied Physics Letters, April 2024, American Institute of Physics

    Rachel Goldman

  2. Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs1−x−yNxBiy alloys

    Article • Applied Physics Letters, April 2024, American Institute of Physics

    Rachel Goldman

  3. Probing conduction band offsets and confined states at GaAs/GaAsNBi heterointerfaces

    Article • Applied Physics Letters, November 2023, American Institute of Physics

    Rachel Goldman

  4. Influence of strain and dislocations on GaSb/GaAs quantum dots: From nested to staggered band alignment

    Article • Journal of Applied Physics, February 2022, American Institute of Physics

    Rachel Goldman

  5. Influence of gallium surface saturation on GaN nanowire polytype selection during molecular-beam epitaxy

    Article • Applied Physics Letters, July 2021, American Institute of Physics

    Rachel Goldman

  6. Influence of quantum dot morphology on the optical properties of GaSb/GaAs multilayers

    Article • Applied Physics Letters, June 2020, American Institute of Physics

    Rachel Goldman

  7. Mechanisms of GaN quantum dot formation during nitridation of Ga droplets

    Article • Applied Physics Letters, February 2020, American Institute of Physics

    Rachel Goldman

  8. Ion irradiation of III–V semiconductor surfaces: From self-assembled nanostructures to plasmonic crystals

    Article • Applied Physics Reviews, December 2019, American Institute of Physics

    Rachel Goldman

  9. Morphological design of complex oxides during pulsed-laser deposition: The role of plasma-plume expansion

    Article • Journal of Applied Physics, November 2019, American Institute of Physics

    Ilan Shalish, Rachel Goldman

  10. Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys

    Article • Applied Physics Letters, August 2019, American Institute of Physics

    Rachel Goldman

  11. Formation and properties of InGaN QDs: Influence of substrates

    Article • Applied Physics Letters, February 2019, American Institute of Physics

    Rachel Goldman

  12. Surfactant-induced chemical ordering of GaAsN:Bi

    Article • Applied Physics Letters, November 2018, American Institute of Physics

    Rachel Goldman, Hongling Lu