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  1. Probing the arsenic distribution and dopant activation in poly-crystalline CdTe1−xSex solar cell absorbers

    Article • Journal of Applied Physics, July 2025, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  2. Formation and optical properties of indium nanoparticle arrays for deep-UV plasmonics

    Article • Applied Physics Letters, July 2025, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  3. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots

    Article • Applied Physics Letters, March 2025, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  4. Lattice-matched multiple channel AlScN/GaN heterostructures

    Article • APL Materials, October 2024, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  5. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers

    Article • Applied Physics Letters, September 2024, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  6. Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires

    Article • Applied Physics Letters, July 2024, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  7. Onset of tetrahedral interstitial formation in GaAsN alloys

    Article • Applied Physics Letters, April 2024, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  8. Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs1−x−yNxBiy alloys

    Article • Applied Physics Letters, April 2024, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  9. Comparison of Mg-based liquid metal ion sources for scalable focused-ion-implantation doping of GaN

    Article • AIP Advances, April 2024, American Institute of Physics

    michael titze, Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  10. Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy

    Article • Journal of Applied Physics, November 2023, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  11. Homologous Self‐Assembled Superlattices: What Causes their Periodic Polarity Switching?

    Article • Advanced Physics Research, November 2023, Wiley

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  12. Probing conduction band offsets and confined states at GaAs/GaAsNBi heterointerfaces

    Article • Applied Physics Letters, November 2023, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  13. Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN p-n junctions for efficient power devices

    Article • Nano Energy, November 2022, Elsevier

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  14. On the importance of atom probe tomography for the development of new nanoscale devices

    Article • August 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  15. Influence of strain and dislocations on GaSb/GaAs quantum dots: From nested to staggered band alignment

    Article • Journal of Applied Physics, February 2022, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  16. Writing-to-learn in introductory materials science and engineering

    Article • MRS Communications, January 2022, Springer Science + Business Media

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  17. Influence of gallium surface saturation on GaN nanowire polytype selection during molecular-beam epitaxy

    Article • Applied Physics Letters, July 2021, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  18. Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys

    Article • Applied Physics Letters, October 2020, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  19. Influence of quantum dot morphology on the optical properties of GaSb/GaAs multilayers

    Article • Applied Physics Letters, June 2020, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  20. Mechanisms of GaN quantum dot formation during nitridation of Ga droplets

    Article • Applied Physics Letters, February 2020, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  21. Ion irradiation of III–V semiconductor surfaces: From self-assembled nanostructures to plasmonic crystals

    Article • Applied Physics Reviews, December 2019, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  22. Morphological design of complex oxides during pulsed-laser deposition: The role of plasma-plume expansion

    Article • Journal of Applied Physics, November 2019, American Institute of Physics

    Ilan Shalish, Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  23. Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys

    Article • Applied Physics Letters, August 2019, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  24. Formation and properties of InGaN QDs: Influence of substrates

    Article • Applied Physics Letters, February 2019, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  25. Surfactant-induced chemical ordering of GaAsN:Bi

    Article • Applied Physics Letters, November 2018, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman, Hongling Lu

  26. Influence of surface nano-patterning on the placement of InAs quantum dots

    Article • Journal of Applied Physics, September 2018, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  27. Effect of modified periodic waveforms on current-induced spin polarization measurements

    Article • AIP Advances, June 2018, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  28. Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

    Article • Physical Review B, November 2017, American Physical Society (APS)

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  29. Investigation of the Influence of a Writing-to-Learn Assignment on Student Understanding of Polymer Properties

    Article • Journal of Chemical Education, September 2017, American Chemical Society (ACS)

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  30. Formation of embedded plasmonic Ga nanoparticle arrays and their influence on GaAs photoluminescence

    Article • Journal of Applied Physics, July 2017, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  31. Bi-enhanced N incorporation in GaAsNBi alloys

    Article • Applied Physics Letters, June 2017, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  32. Influence of surface reconstruction on dopant incorporation and transport properties of GaAs(Bi) alloys

    Article • Applied Physics Letters, December 2016, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  33. Quasi-ordering of composition fluctuations and their interaction with lattice imperfections in an optical spectra of dilute nitride alloys

    Article • Semiconductor Science and Technology, August 2016, Institute of Physics Publishing

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  34. Origins of enhanced thermoelectric power factor in topologically insulating Bi0.64Sb1.36Te3 thin films

    Article • Applied Physics Letters, January 2016, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  35. Identifying the dominant interstitial complex in dilute GaAsN alloys

    Article • Applied Physics Letters, November 2015, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  36. Formation and coarsening of near-surface Ga nanoparticles on SiNx

    Article • Applied Physics Letters, June 2015, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  37. g-factor modification in a bulk InGaAs epilayer by an in-plane electric field

    Article • Physical Review B, May 2015, American Physical Society (APS)

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  38. Profiling the local carrier concentration across a semiconductor quantum dot

    Article • Applied Physics Letters, May 2015, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  39. Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs

    Article • Journal of Applied Physics, February 2015, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  40. Ordered horizontal Sb2Te3 nanowires induced by femtosecond lasers

    Article • Applied Physics Letters, November 2014, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  41. Nanodot formation induced by femtosecond laser irradiation

    Article • Applied Physics Letters, October 2014, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  42. Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignment

    Article • Applied Physics Letters, October 2014, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  43. Surface photovoltage and modulation spectroscopy of E− and E+ transitions in GaNAs layers

    Article • Thin Solid Films, September 2014, Elsevier

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  44. Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots

    Article • Applied Physics Letters, July 2014, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  45. Evolution of ion-induced nanoparticle arrays on GaAs surfaces

    Article • Applied Physics Letters, May 2014, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  46. Formation and evolution of ripples on ion-irradiated semiconductor surfaces

    Article • Applied Physics Letters, February 2014, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  47. Room-Temperature Epitaxial Electrodeposition of Single-Crystalline Germanium Nanowires at the Wafer Scale from an Aqueous Solution

    Article • Nano Letters, January 2014, American Chemical Society (ACS)

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  48. Quantifying the local Seebeck coefficient with scanning thermoelectric microscopy

    Article • Applied Physics Letters, November 2013, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  49. Mechanisms of InAs/GaAs quantum dot formation during annealing of In islands

    Article • Applied Physics Letters, September 2013, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  50. Ga nanoparticle-enhanced photoluminescence of GaAs

    Article • Applied Physics Letters, September 2013, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  51. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

    Article • Applied Physics Letters, August 2013, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  52. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    Article • Applied Physics Letters, August 2013, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  53. Growth, disorder, and physical properties of ZnSnN2

    Article • Applied Physics Letters, July 2013, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  54. Influence of embedded indium nanocrystals on GaAs thermoelectric properties

    Article • Journal of Applied Physics, July 2013, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  55. Formation mechanisms of embedded nanocrystals in SiNx

    Article • Applied Physics Letters, June 2013, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  56. Influence of N incorporation on persistent photoconductivity in GaAsN alloys

    Article • Physical Review B, April 2013, American Physical Society (APS)

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  57. Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi

    Article • Applied Physics Letters, January 2013, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  58. Spin lifetime measurements in GaAsBi thin films

    Article • Applied Physics Letters, January 2013, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  59. Universal mechanism for ion-induced nanostructure formation on III-V compound semiconductor surfaces

    Article • Applied Physics Letters, August 2012, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  60. Surface plasmon resonances of Ga nanoparticle arrays

    Article • Applied Physics Letters, August 2012, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  61. Formation and transformation of embedded GaN nanocrystals

    Article • Applied Physics Letters, May 2012, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  62. Evolution of structural and thermoelectric properties of indium-ion-implanted epitaxial GaAs

    Article • Applied Physics Letters, March 2012, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  63. Mechanisms of nanorod growth on focused-ion-beam-irradiated semiconductor surfaces: Role of redeposition

    Article • Applied Physics Letters, January 2012, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  64. Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals

    Article • Journal of Applied Physics, December 2011, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  65. Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices

    Article • Journal of Applied Physics, October 2011, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  66. Formation and transfer of GaAsN nanostructure layers

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, September 2011, American Vacuum Society

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  67. Formation mechanisms of embedded wurtzite and zincblende indium nitride nanocrystals

    Article • Applied Physics Letters, August 2011, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  68. Influence of Mn dopants on InAs/GaAs quantum dot electronic states

    Article • Applied Physics Letters, April 2011, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  69. Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs

    Article • Applied Physics Letters, January 2011, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  70. Nitrogen composition dependence of electron effective mass inGaAs1−

    Article • Physical Review B, September 2010, American Physical Society (APS)

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  71. Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation

    Article • Applied Physics Letters, October 2009, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  72. Formation and coarsening of Ga droplets on focused-ion-beam irradiated GaAs surfaces

    Article • Applied Physics Letters, October 2009, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  73. Blister formation in ion-implanted GaAs: Role of diffusivity

    Article • Applied Physics Letters, September 2009, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  74. Influence of Si–N complexes on the electronic properties of GaAsN alloys

    Article • Applied Physics Letters, August 2009, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  75. Influence of N interstitials on the electronic properties of GaAsN alloys

    Article • Applied Physics Letters, August 2009, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  76. Nanometer-scale measurements of electronic states in InAs∕GaAs quantum dots

    Article • Journal of Applied Physics, July 2009, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  77. Thermoelectric properties of quantum dot chains

    Article • Journal of Applied Physics, May 2009, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  78. Thermal transport in a semiconductor heterostructure measured by time-resolved x-ray diffraction

    Article • Physical Review B, July 2008, American Physical Society (APS)

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  79. Probing Unfolded Acoustic Phonons with X Rays

    Article • Physical Review Letters, July 2008, American Physical Society (APS)

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  80. Erratum: “Influence of N on the electronic properties of GaAsN alloy films and heterostructures” [J. Appl. Phys. 102, 103710 (2007)]

    Article • Journal of Applied Physics, January 2008, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  81. Influence of N on the electronic properties of GaAsN alloy films and heterostructures

    Article • Journal of Applied Physics, November 2007, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  82. Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, October 2007, American Vacuum Society

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  83. Ultrafast optical generation and remote detection of terahertz sound using semiconductor superlattices

    Article • Applied Physics Letters, July 2007, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  84. Mechanisms of GaAsN growth: Surface and step-edge diffusion

    Article • Journal of Applied Physics, April 2007, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  85. Observation of Surface-Avoiding Waves: A New Class of Extended States in Periodic Media

    Article • Physical Review Letters, September 2006, American Physical Society (APS)

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  86. Moments-based tight-binding calculations of local electronic structure in InAs/GaAs quantum dots for comparison to experimental measurements

    Article • Applied Physics Letters, January 2006, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  87. Generation and Propagation of a Picosecond Acoustic Pulse at a Buried Interface: Time-Resolved X-Ray Diffraction Measurements

    Article • Physical Review Letters, December 2005, American Physical Society (APS)

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  88. Control of InAs∕GaAs quantum dot density and alignment using modified buffer layers

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, July 2005, American Vacuum Society

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  89. Stress evolution in GaAsN alloy films

    Article • Journal of Applied Physics, May 2005, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  90. Matrix-seeded growth of nitride semiconductor nanostructures using ion beams

    Article • Journal of Applied Physics, March 2005, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  91. Effects of buffer layers on the structural and electronic properties of InSb films

    Article • Journal of Applied Physics, January 2005, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  92. Nanometer-scale studies of point defect distributions in GaMnAs alloys

    Article • Applied Physics Letters, December 2004, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  93. Origins of luminescence from nitrogen-ion-implanted epitaxial GaAs

    Article • Applied Physics Letters, October 2004, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  94. Mechanisms of nitrogen incorporation in GaAsN alloys

    Article • Applied Physics Letters, September 2004, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  95. Nanoprobing of semiconductor heterointerfaces: quantum dots, alloys and diffusion

    Article • Journal of Physics D Applied Physics, June 2004, Institute of Physics Publishing

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  96. Formation and blistering of GaAsN nanostructure layers

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, May 2004, American Vacuum Society

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  97. Initiation and evolution of phase separation in GaP/InP short-period superlattices

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, January 2004, American Vacuum Society

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  98. Mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, July 2003, American Vacuum Society

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  99. Mechanisms of semiconductor nanostructure formation

    Article • phys stat sol (a), January 2003, Wiley

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  100. Evolution of structural and optical properties of ion-beam synthesized GaAsN nanostructures

    Article • Journal of Applied Physics, October 2002, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  101. Lateral indium–indium pair correlations within the wetting layers of buried InAs/GaAs quantum dots

    Article • Applied Physics Letters, August 2002, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  102. Initiation and evolution of phase separation in heteroepitaxial InAlAs films

    Article • Applied Physics Letters, May 2002, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  103. Evolution of structural and electronic properties of highly mismatched InSb films

    Article • Journal of Applied Physics, December 2000, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  104. Structural and compositional variations in ZnSnP2/GaAs superlattices

    Article • Applied Physics Letters, October 2000, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  105. INTERDIFFUSION, SEGREGATION, AND DISSOLUTION IN InAs/GaAs QUANTUM DOT SUPERLATTICES

    Article • Surface Review and Letters, October 2000, World Scientific Pub Co Pte Lt

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  106. Growth of high density self-organized (In,Ga)As quantum dots with ultranarrow photoluminescence linewidths using buried In(Ga,Al)As stressor dots

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, May 2000, American Vacuum Society

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  107. Nanometer-scale studies of Al–Ga interdiffusion and As precipitate coarsening in nonstoichiometric AlAs/GaAs superlattices

    Article • Applied Physics Letters, December 1999, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  108. Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots

    Article • Applied Physics Letters, November 1999, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  109. Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots

    Article • Applied Physics Letters, May 1999, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  110. Kinetics of Carbon–NO Reaction Studied by Scanning Tunneling Microscopy on the Basal Plane of Graphite

    Article • Journal of Catalysis, December 1998, Elsevier

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  111. Effects of GaAs substrate misorientation on strain relaxation in InxGa1−xAs films and multilayers

    Article • Journal of Applied Physics, May 1998, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  112. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy

    Article • Applied Physics Letters, April 1998, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  113. Nanometer-scale studies of nitride/arsenide heterostructures produced by nitrogen plasma exposure of GaAs

    Article • Journal of Electronic Materials, November 1997, Springer Science + Business Media

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  114. Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, July 1997, American Vacuum Society

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  115. In situ detection of misfit dislocations by light scattering

    Article • Journal of Crystal Growth, April 1997, Elsevier

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  116. Photoconduction studies on InGaAs HEMTs

    Article • January 1997, Institute of Electrical & Electronics Engineers (IEEE)

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  117. Correlation of buffer strain relaxation modes with transport properties of two-dimensional electron gases

    Article • Journal of Applied Physics, December 1996, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  118. Atomic-scale structure and electronic properties of GaN/GaAs superlattices

    Article • Applied Physics Letters, December 1996, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  119. Modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterostructures grown on GaAs substrates using step-graded InxGa1−xAs buffers

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, July 1996, American Vacuum Society

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  120. Anomalous moment and anisotropy behavior inFe3

    Article • Physical Review B, April 1996, American Physical Society (APS)

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  121. Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers

    Article • Applied Physics Letters, December 1995, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  122. Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs(001) interfaces

    Article • Applied Physics Letters, July 1995, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  123. Gate-controlled modulation of charge transport in long-channel, δ-doped, heterojunction Hall-bar structures

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, July 1995, American Vacuum Society

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  124. Influence of GaAs(001) substrate misorientation towards {111} on the optical properties of InxGa1−xAs/GaAs

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, July 1995, American Vacuum Society

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  125. Relaxation-induced polarized luminescence fromInx...

    Article • Physical Review B, February 1995, American Physical Society (APS)

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  126. Study of μm-scale spatial variations in strain of a compositionally step-graded InxGa1−xAs/GaAs(001) heterostructure

    Article • Applied Physics Letters, February 1995, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  127. Effects of Substrate Misorientation Direction on Strain Relaxation at InGaAs/GaAs(001) Interfaces

    Article • MRS Proceedings, January 1995, Springer Science + Business Media

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  128. Structural and Magnetic Characterization of Bi-Substituted Garnet on Si and GaAs

    Article • MRS Proceedings, January 1995, Springer Science + Business Media

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  129. Anisotropic structural, electronic, and optical properties of InGaAs grown by molecular beam epitaxy on misoriented substrates

    Article • Applied Physics Letters, September 1994, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  130. Dislocation-Induced deep level states in In0.08Ga0.92As/GaAs heterostructures

    Article • Journal of Electronic Materials, September 1994, Springer Science + Business Media

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  131. Strain relaxation induced deep levels in In1−xGaxAs thin films

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, July 1994, American Vacuum Society

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  132. Optical detection of misfit dislocation-induced deep levels at InGaAs/GaAs heterojunctions

    Article • Applied Physics Letters, June 1994, American Institute of Physics

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  133. <title>Control of surface morphology and strain relaxation in InGaAs grown on GaAs using a step-graded buffer</title>

    Article • May 1994, SPIE

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  134. A Brillouin scattering investigation of NiO

    Article • Journal of Magnetism and Magnetic Materials, January 1994, Elsevier

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  135. Anisotropic Structural and Electronic Properties of InGaAs/GaAs Heterojunctions

    Article • MRS Proceedings, January 1994, Springer Science + Business Media

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman

  136. Superlattices and long-range order in electrodeposited dendrites

    Article • Physical Review Letters, April 1990, American Physical Society (APS)

    Maria Goeppert Mayer Collegiate Professor Rachel S Goldman