What is it about?
We measured the bandgap of wurtzite (hexagonal) form of GaAs and the band alignment in its heterojunction with the common zincblende (cubic) form of GaAs.
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Why is it important?
The wurtzite form of GaAs has only recently been observed for the first time in nanowire. In this paper we report for the first time the formation of an epilayer of this material and we characterize this epilayer for its bandgap and band alignment of its junction with zincblende GaAs.
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This page is a summary of: Bandgap and band discontinuity in wurtzite/zincblende GaAs homomaterial heterostructure, Applied Physics Letters, May 2012, American Institute of Physics,
DOI: 10.1063/1.4712562.
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