Carlo De Santi

All Stories

1. 
   Quantitative modeling of threshold instability in β-Ga2O3 finFETs through electro-optical investigation

   Article • APL Materials, February 2026, American Institute of Physics

   Carlo De Santi

2. 
   A Schottky gate p-GaN fin-channel field effect transistor on very low-doped p-GaN films

   Article • Japanese Journal of Applied Physics, December 2025, Institute of Physics Publishing

   Carlo De Santi

3. 
   Diffusion mechanism as cause of optical degradation in AlGaN-based UV-C leds investigated by TCAD simulations

   Article • Scientific Reports, November 2025, Springer Science + Business Media

   Carlo De Santi

4. 
   Extrinsic Failure of High-Power Blue LEDs for Horticulture Applications Stressed in Hot Environments

   Article • September 2025, Institute of Electrical & Electronics Engineers (IEEE)

   Carlo De Santi

5. 
   Systematic analysis of the trapping and reliability of Al2O3/GaN MOS capacitors with different atomic layer deposition techniques

   Article • Materials Science in Semiconductor Processing, August 2025, Elsevier

   Carlo De Santi

6. 
   Ultra-fast recovery transients in GaN MIS-HEMT submitted to OFF-state stress

   Article • Microelectronics Reliability, August 2025, Elsevier

   Carlo De Santi

7. 
   Efficiency- and lifetime-limiting effects of commercially available UVC LEDs: a review

   Article • Journal of Physics Photonics, July 2025, Institute of Physics Publishing

   Carlo De Santi

8. 
   Study of trapping mechanisms affecting AlGaN/GaN HEMTs adopting AlGaN back-barriers with different aluminum concentrations

   Article • Microelectronics Reliability, July 2025, Elsevier

   Carlo De Santi

9. 
   Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs

   Article • June 2025, Institute of Electrical & Electronics Engineers (IEEE)

   Carlo De Santi

10. 
    Recoverable degradation of FAPbBr3 perovskite solar cells under reverse-bias: A combined electro-optical investigation

    Article • Solar Energy Materials and Solar Cells, June 2025, Elsevier

    Carlo De Santi

11. 
    OFF-state breakdown and threshold voltage stability of vertical GaN-on-Si trench MOSFETs

    Article • Microelectronics Reliability, June 2025, Elsevier

    Carlo De Santi

12. 
    Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase

    Article • Microelectronics Reliability, May 2025, Elsevier

    Carlo De Santi

13. 
    Impact of drain-source leakage on the dynamic Ron of power HEMTs with p-GaN gate

    Article • Microelectronics Reliability, May 2025, Elsevier

    Carlo De Santi

14. 
    Interface-related VTH shift of SiC MOSFETs during constant current stress extracted from charge pumping measurements

    Article • Microelectronics Reliability, May 2025, Elsevier

    Carlo De Santi

15. 
    Long-term (8000 h) reliability and failures of high-power LEDs for outdoor lighting stressed at high ambient temperatures

    Article • Microelectronics Reliability, May 2025, Elsevier

    Carlo De Santi

16. 
    Understanding the Ga Polar n‐GaN Surface after Mg Diffusion Process

    Article • phys stat sol (a), April 2025, Wiley

    Carlo De Santi

17. 
    Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs

    Article • Scientific Reports, April 2025, Springer Science + Business Media

    Carlo De Santi

18. 
    Changes in the extraction and collection efficiency of GaN-based MQW solar cells under optical step-stress

    Article • Microelectronics Reliability, April 2025, Elsevier

    Carlo De Santi

19. 
    Vth and Ron Instability of GaN Power HEMTs with pGaN Gate Under Negative Gate Bias

    Article • March 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

20. 
    Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $\mu \mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications

    Article • March 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

21. 
    Evidence for Avalanche Operation in Sub-Micrometer Power GaN HEMTs with p-GaN Gate

    Article • March 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

22. 
    Recombination-Driven Interface Trap Generation in SiC MOSFETs Under Constant Voltage and Constant Current Stress

    Article • March 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

23. 
    Addressing the oxide-aperture dependency of the degradation of 845 nm VCSELs for silicon photonics

    Article • March 2025, SPIE

    Carlo De Santi

24. 
    Analysis of extrinsic failure mechanisms of high-power blue, red, and white LEDs for horticulture and street lighting

    Article • March 2025, SPIE

    Carlo De Santi

25. 
    Defects and reliability of UVC-LEDs

    Article • March 2025, SPIE

    Carlo De Santi

26. 
    Defects in InGaN QW structures: microscopic properties and modeling

    Article • March 2025, SPIE

    Carlo De Santi

27. 
    Spectral components, initial improvement, and degradation of 265 nm UV-C LEDs

    Article • March 2025, SPIE

    Carlo De Santi

28. 
    Study and Interpretation of short-term temporary reverse-bias degradation in wide-bandgap FAPbBr3 perovskite solar cells

    Article • March 2025, SPIE

    Carlo De Santi

29. 
    Degradation of 1.3 μm Quantum Dot Laser Diodes for Silicon Photonics: Dependence on the Number of Dot-in-a-Well Layers

    Article • IEEE Journal of Selected Topics in Quantum Electronics, March 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

30. 
    Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon Photonics

    Article • IEEE Journal of Selected Topics in Quantum Electronics, March 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

31. 
    Investigating the optical degradation of InAs quantum dot lasers on silicon through combined electro-optical characterization and gain measurements

    Article • Journal of Physics Photonics, February 2025, Institute of Physics Publishing

    Carlo De Santi

32. 
    Hail Damage Investigation in Heterojunction Silicon Photovoltaic Modules: A Real-World Case Study

    Article • IEEE Journal of Photovoltaics, January 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

33. 
    Solid State Lighting Systems for horticulture: impact of LED degradation on light spectrum and intensity

    Article • IEEE Transactions on Industry Applications, January 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

34. 
    Current Collapse in Buffer-Free GaN-on-SiC Power Transistors: Maxwell–Wagner Effect and Related Model

    Article • IEEE Transactions on Electron Devices, January 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

35. 
    Enhanced Gate Reliability of p-GaN/AlGaN/GaN HEMTs due to Gate Hole Injection and Recombination

    Article • IEEE Electron Device Letters, January 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

36. 
    Modeling Cracks in Silicon-Heterojunction Photovoltaic Modules: A Real-World Case Study

    Article • IEEE Journal of Photovoltaics, January 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

37. 
    Deep-Level Effects in Back-Barrier-Scaled GaN HEMTs

    Article • IEEE Transactions on Microwave Theory and Techniques, January 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

38. 
    Experimental Evidence of Sustainable Avalanche Operation in E-mode GaN HEMTs

    Article • IEEE Electron Device Letters, January 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

39. 
    Physical Modelling of Charge Trapping Effects

    Article • December 2024, Springer Science + Business Media

    Carlo De Santi

40. 
    Vertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC

    Article • December 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

41. 
    Catastrophic degradation of LEDs: failure analysis and perspective

    Article • November 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

42. 
    Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate

    Article • Applied Physics Express, October 2024, Institute of Physics Publishing

    Carlo De Santi

43. 
    Degradation Mechanisms in High-Power LEDs: Thermal Analysis of Failure Modes

    Article • September 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

44. 
    Quality Assessment of Perovskite Solar Cells: An Industrial Point of View

    Article • Photonics, September 2024, MDPI AG

    Carlo De Santi

45. 
    Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs

    Article • Journal of Physics D Applied Physics, August 2024, Institute of Physics Publishing

    Carlo De Santi

46. 
    Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

    Article • Journal of Physics D Applied Physics, August 2024, Institute of Physics Publishing

    Carlo De Santi

47. 
    Optical Power Degradation Related to Turn-On in Commercial 265 nm UV-C LEDs

    Article • July 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

48. 
    Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements

    Article • Materials Science in Semiconductor Processing, July 2024, Elsevier

    Carlo De Santi

49. 
    Investigation of degradation dynamics of 265 nm LEDs assisted by EL measurements and numerical simulations

    Article • Semiconductor Science and Technology, June 2024, Institute of Physics Publishing

    Carlo De Santi

50. 
    Positive VTH Shift in Schottky p-GaN Gate Power HEMTs: Dependence on Temperature, Bias and Gate Leakage

    Article • IEEE Transactions on Power Electronics, June 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

51. 
    Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements

    Article • April 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

52. 
    Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects

    Article • April 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

53. 
    On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach

    Article • April 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

54. 
    $\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout

    Article • April 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

55. 
    Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs

    Article • April 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

56. 
    Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress

    Article • April 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

57. 
    Modeling of the gate leakage in MOSFETs with Al2O3/β-Ga2O3 gate stack

    Article • March 2024, SPIE

    Carlo De Santi

58. 
    Defects, performance, and reliability in UVC LEDs

    Article • March 2024, SPIE

    Carlo De Santi

59. 
    Robustness and reliability of high-power white LEDs under high-temperature, high-current stress

    Article • March 2024, SPIE

    Carlo De Santi

60. 
    Undestanding commercial UVC LEDs reliability to boost disinfection efficacy

    Article • March 2024, SPIE

    Carlo De Santi

61. 
    Semitransparent perovskite solar cells for Si tandem and agrivoltaic integration

    Article • March 2024, SPIE

    Carlo De Santi

62. 
    Antimony selenide solar cells: non-ideal deep level response and study of trap-filling transients

    Article • March 2024, SPIE

    Carlo De Santi

63. 
    Influence of V-pits on the electro-optical properties of high-periodicity InGaN MQWs

    Article • March 2024, SPIE

    Carlo De Santi

64. 
    Lifetime-limiting mechanisms of integrated IR sources for silicon photonics

    Article • March 2024, SPIE

    Carlo De Santi

65. 
    Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

    Article • Journal of Semiconductors, March 2024, Institute of Physics Publishing

    Carlo De Santi

66. 
    Modeling the Electrical Degradation of Micro-Transfer Printed 845 nm VCSILs for Silicon Photonics

    Article • IEEE Transactions on Electron Devices, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

67. 
    Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

    Article • IEEE Transactions on Electron Devices, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

68. 
    Modeling of the electrical characteristics and degradation mechanisms of UV-C LEDs

    Article • IEEE Photonics Journal, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

69. 
    V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis

    Article • IEEE Transactions on Electron Devices, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

70. 
    TCAD Modeling and Simulation of Dark Current-Voltage Characteristics in High-Periodicity InGaN/GaN Multiple-Quantum-Wells (MQWs) Solar Cells

    Article • IEEE Journal of Photovoltaics, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi, Matteo Giovanni Carmelo Alasio

71. 
    Fast Characterization of Power LEDs: Circuit Design and Experimental Results

    Article • IEEE Transactions on Electron Devices, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

72. 
    Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs

    Article • IEEE Transactions on Power Electronics, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

73. 
    Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation

    Article • IEEE Journal of the Electron Devices Society, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

74. 
    Effect of High Monochromatic Radiation on the Electrical Performance of CIGS Solar Cell

    Article • IEEE Journal of Photovoltaics, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

75. 
    Self-induced photoionization of traps in buffer-free AlGaN/GaN HEMTs

    Article • IEEE Electron Device Letters, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

76. 
    Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization

    Article • ACS Photonics, November 2023, American Chemical Society (ACS)

    Carlo De Santi

77. 
    A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation

    Article • Microelectronics Reliability, November 2023, Elsevier

    Carlo De Santi

78. 
    Early failure of high-power white LEDs for outdoor applications under extreme electrical stress: Role of silicone encapsulant

    Article • Microelectronics Reliability, November 2023, Elsevier

    Carlo De Santi

79. 
    Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: A temperature-dependent analysis

    Article • Microelectronics Reliability, November 2023, Elsevier

    Carlo De Santi

80. 
    Threshold voltage instability in SiO2-gate semi-vertical GaN trench MOSFETs grown on silicon substrate

    Article • Microelectronics Reliability, November 2023, Elsevier

    Carlo De Santi

81. 
    Trade-off between gate leakage current and threshold voltage stability in power HEMTs during ON-state and OFF-state stress

    Article • Microelectronics Reliability, November 2023, Elsevier

    Carlo De Santi

82. 
    Bias-dependent degradation of single quantum well on InGaN-based light emitting diode

    Article • Microelectronics Reliability, November 2023, Elsevier

    Carlo De Santi

83. 
    Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness

    Article • Microelectronics Reliability, November 2023, Elsevier

    Carlo De Santi

84. 
    On the importance of Fast and Accurate LED Optical and Thermal Characterization: from visible use cases to UV technologies

    Article • September 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

85. 
    Addressing the electrical degradation of 845 nm micro-transfer printed VCSILs through TCAD simulations

    Article • September 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

86. 
    Modeling the electrical characteristic and degradation mechanisms of UV-C LEDs

    Article • September 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

87. 
    Gate leakage modeling in lateral β -Ga2O3 MOSFETs with Al2O3 gate dielectric

    Article • Applied Physics Letters, September 2023, American Institute of Physics

    Carlo De Santi, Manuel Fregolent

88. 
    Solid State Lighting for horticolture: impact of LED reliability on light spectrum and intensity

    Article • June 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

89. 
    Performance and Degradation of Commercial Ultraviolet‐C Light‐Emitting Diodes for Disinfection Purposes

    Article • phys stat sol (a), May 2023, Wiley

    Carlo De Santi

90. 
    Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations

    Article • Applied Physics Letters, May 2023, American Institute of Physics

    Carlo De Santi, Dr. Francesco Piva

91. 
    Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations

    Article • Applied Physics Letters, April 2023, American Institute of Physics

    Carlo De Santi, Manuel Fregolent

92. 
    Influence of Mg-doping on UV-C LEDs and model of optical power degradation

    Article • Applied Physics Letters, April 2023, American Institute of Physics

    Carlo De Santi, Dr. Francesco Piva

93. 
    Dynamical properties and performances of ß-Ga2O3 UVC photodetectors of extreme solar blindness

    Article • March 2023, SPIE

    Carlo De Santi

94. 
    Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits

    Article • March 2023, SPIE

    Carlo De Santi

95. 
    Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy

    Article • March 2023, SPIE

    Carlo De Santi

96. 
    Degradation of GaN-based InGaN-GaN MQWs solar cells caused by thermally-activated diffusion

    Article • March 2023, SPIE

    Carlo De Santi

97. 
    Experimental analysis of degradation of multi-quantum well GaN based solar cells under current stress

    Article • March 2023, SPIE

    Carlo De Santi

98. 
    Improving the reliability of InAs quantum-dot laser diodes for silicon photonics: the role of trapping layers and misfit-dislocation density

    Article • March 2023, SPIE

    Carlo De Santi

99. 
    Degradation mechanisms of laser diodes for silicon photonics applications

    Article • March 2023, SPIE

    Carlo De Santi

100. 
     III-N optoelectronic devices: understanding the physics of electro-optical degradation

     Article • March 2023, SPIE

     Carlo De Santi

101. 
     Injection-limited efficiency of InGaN LEDs and impact on electro-optical performance and ageing: a case study

     Article • March 2023, SPIE

     Carlo De Santi

102. 
     UVC LED reliability and its effect on disinfection systems design

     Article • March 2023, SPIE

     Carlo De Santi

103. 
     Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques

     Article • March 2023, Institute of Electrical & Electronics Engineers (IEEE)

     Manuel Fregolent, Carlo De Santi

104. 
     High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps

     Article • March 2023, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

105. 
     Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests

     Article • March 2023, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

106. 
     Optically Induced Degradation Due to Thermally Activated Diffusion in GaN-Based InGaN/GaN MQW Solar Cells

     Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

107. 
     Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

     Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

108. 
     Degradation of GaN-Based Multiple Quantum Wells Solar Cells Under Forward Bias: Investigation Based on Optical Measurements and Steady-State Photocapacitance

     Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

109. 
     Understanding the optical degradation of 845nm micro-transfer-printed VCSILs for photonic integrated circuits

     Article • IEEE Journal of Quantum Electronics, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

110. 
     On the CET-Map Ill-Posed Inversion Problem: Theory and Application to GaN HEMTs

     Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

111. 
     Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm Algan/Gan Hemts for Power RF Applications

     Article • IEEE Transactions on Device and Materials Reliability, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

112. 
     Status of Performance and Reliability of 265 nm Commercial UV-C LEDs in 2023

     Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

113. 
     Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells

     Article • IEEE Journal of Photovoltaics, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

114. 
     Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability

     Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

115. 
     Dynamic Behavior of Threshold Voltage and $\textit{I}_{\text{D}}$–$\textit{V}_{\text{DS}}$ Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect

     Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

116. 
     Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors

     Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi, Manuel Fregolent

117. 
     Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results

     Article • phys stat sol (a), November 2022, Wiley

     Carlo De Santi

118. 
     GaN-Based Lateral and Vertical Devices

     Article • November 2022, Springer Science + Business Media

     Carlo De Santi

119. 
     Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

     Article • Microelectronics Reliability, November 2022, Elsevier

     Carlo De Santi

120. 
     Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs

     Article • Microelectronics Reliability, November 2022, Elsevier

     Carlo De Santi

121. 
     Impact of a defect trapping layer on the reliability of 1.3 μm quantum dot laser diodes grown on silicon

     Article • Microelectronics Reliability, November 2022, Elsevier

     Carlo De Santi

122. 
     Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 nm laser excitation

     Article • Microelectronics Reliability, November 2022, Elsevier

     Carlo De Santi

123. 
     Comparison between Cu(In,Ga)Se2 solar cells with different back contacts submitted to current stress

     Article • Microelectronics Reliability, November 2022, Elsevier

     Carlo De Santi

124. 
     Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

     Article • Microelectronics Reliability, November 2022, Elsevier

     Carlo De Santi

125. 
     Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs

     Article • Microelectronics Reliability, November 2022, Elsevier

     Carlo De Santi

126. 
     Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

     Article • Microelectronics Reliability, November 2022, Elsevier

     Carlo De Santi

127. 
     Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs

     Article • Microelectronics Reliability, November 2022, Elsevier

     Carlo De Santi

128. 
     Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode

     Article • Micromachines, August 2022, MDPI AG

     Carlo De Santi

129. 
     Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling

     Article • Journal of Applied Physics, June 2022, American Institute of Physics

     Carlo De Santi

130. 
     Cryogenic Ultra-Fast Bias Temperature Instability Trap Profiling of SiC MOSFETs

     Article • May 2022, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

131. 
     Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling

     Article • Applied Physics Letters, April 2022, American Institute of Physics

     Manuel Fregolent, Carlo De Santi

132. 
     Study and characterization of GaN MOS capacitors: Planar vs trench topographies

     Article • Applied Physics Letters, April 2022, American Institute of Physics

     Carlo De Santi

133. 
     Time-dependent degradation of hydrogen-terminated diamond MESFETs

     Article • March 2022, SPIE

     Carlo De Santi

134. 
     Conduction properties and threshold voltage instability in β-Ga2O3 MOSFETs

     Article • March 2022, SPIE

     Manuel Fregolent, Carlo De Santi

135. 
     Deep levels and conduction processes in nitrogen-implanted Ga2O3 Schottky barrier diodes

     Article • March 2022, SPIE

     Manuel Fregolent, Carlo De Santi

136. 
     Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers

     Article • March 2022, SPIE

     Dr. Marco Peroni, Carlo De Santi

137. 
     Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

     Article • March 2022, SPIE

     Carlo De Santi

138. 
     GaN-based solar cells degradation kinetics investigated at high temperature under high-intensity 405nm optical stress

     Article • March 2022, SPIE

     Carlo De Santi

139. 
     On the performance and reliability of state-of-the-art commercial UV-C LEDs for disinfection purposes

     Article • March 2022, SPIE

     Carlo De Santi

140. 
     UV LED reliability: degradation mechanisms and challenges

     Article • March 2022, SPIE

     Carlo De Santi

141. 
     Investigation of deep level defects in n-type GaAsBi

     Article • March 2022, SPIE

     Manuel Fregolent, Carlo De Santi

142. 
     Analysis of dislocation-related and point-defects in III-As layers by extensive DLTS study

     Article • March 2022, SPIE

     Carlo De Santi

143. 
     Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

     Article • March 2022, SPIE

     Carlo De Santi

144. 
     Modeling the effect of spatial position and concentration of defects on optical degradation of InGaN/GaN multi quantum well light emitting diodes

     Article • March 2022, SPIE

     Carlo De Santi

145. 
     Optical degradation of InAs quantum-dot lasers on silicon: dependence on temperature and on diffusion processes

     Article • March 2022, SPIE

     Carlo De Santi

146. 
     Optical temperature measurement across IR opaque Iayers by means of visible excitation and photoluminescence

     Article • March 2022, SPIE

     Carlo De Santi

147. 
     Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature

     Article • March 2022, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

148. 
     Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier

     Article • March 2022, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

149. 
     GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse

     Article • March 2022, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

150. 
     Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs

     Article • March 2022, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

151. 
     Modeling Hot-Electron Trapping in GaN-based HEMTs

     Article • March 2022, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

152. 
     Reliability of Commercial UVC LEDs: 2022 State-of-the-Art

     Article • Electronics, February 2022, MDPI AG

     Carlo De Santi

153. 
     Defects and Reliability of GaN‐Based LEDs: Review and Perspectives

     Article • phys stat sol (a), February 2022, Wiley

     Carlo De Santi

154. 
     Trap-state mapping to model GaN transistors dynamic performance

     Article • Scientific Reports, February 2022, Springer Science + Business Media

     Carlo De Santi

155. 
     Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence

     Article • Journal of Applied Physics, January 2022, American Institute of Physics

     Carlo De Santi

156. 
     Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis

     Article • Journal of Physics D Applied Physics, January 2022, Institute of Physics Publishing

     Carlo De Santi

157. 
     Origin of the Diffusion-Related Optical Degradation of 1.3 μm Inas QD-LDs Epitaxially Grown on Silicon Substrate

     Article • IEEE Journal of Selected Topics in Quantum Electronics, January 2022, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi, Professor John Edward Bowers

158. 
     Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices

     Article • IEEE Transactions on Electron Devices, January 2022, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

159. 
     Analysis of current transport layer localized resistivity increase after high stress on InGaN LEDs

     Article • IEEE Journal of Emerging and Selected Topics in Industrial Electronics, January 2022, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

160. 
     Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes

     Article • Journal of Applied Physics, December 2021, American Institute of Physics

     Manuel Fregolent, Carlo De Santi

161. 
     Charge Trapping in GaN Power Transistors: Challenges and Perspectives

     Article • December 2021, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

162. 
     GaN-based power devices: Physics, reliability, and perspectives

     Article • Journal of Applied Physics, November 2021, American Institute of Physics

     Carlo De Santi

163. 
     A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics

     Article • Electronics, November 2021, MDPI AG

     Carlo De Santi, Professor John Edward Bowers

164. 
     Dynamic and Capacitive Characterization of 3D GaN n-p-n Vertical Fin-FETs

     Article • November 2021, Institute of Electrical & Electronics Engineers (IEEE)

     Manuel Fregolent, Carlo De Santi

165. 
     Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs

     Article • November 2021, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

166. 
     Microstructural Degradation Investigations of OFF-State Stressed 0.15 μm RF AlGaN/GaN HEMTs: Failure Mode related Breakdown

     Article • November 2021, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

167. 
     Review on the degradation of GaN-based lateral power transistors

     Article • e-Prime - Advances in Electrical Engineering Electronics and Energy, November 2021, Elsevier

     Manuel Fregolent, Carlo De Santi

168. 
     Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate

     Article • Microelectronics Reliability, November 2021, Elsevier

     Carlo De Santi

169. 
     Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode

     Article • Microelectronics Reliability, November 2021, Elsevier

     Carlo De Santi

170. 
     Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes

     Article • Microelectronics Reliability, November 2021, Elsevier

     Carlo De Santi

171. 
     Vertical GaN devices: Process and reliability

     Article • Microelectronics Reliability, November 2021, Elsevier

     Carlo De Santi

172. 
     Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature

     Article • Microelectronics Reliability, November 2021, Elsevier

     Carlo De Santi

173. 
     Electrical, optical characterization and degradation of Cu(InGa)Se2 devices with fluorine-doped tin oxide back contact

     Article • Microelectronics Reliability, November 2021, Elsevier

     Carlo De Santi

174. 
     Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress

     Article • Microelectronics Reliability, November 2021, Elsevier

     Carlo De Santi

175. 
     Nonequilibrium Green’s Function Modeling of Trap-Assisted Tunneling in InxGa1−xN /GaN Light-Emitting Diodes

     Article • Physical Review Applied, October 2021, American Physical Society (APS)

     Carlo De Santi

176. 
     Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

     Article • Journal of Applied Physics, October 2021, American Institute of Physics

     Carlo De Santi

177. 
     Current crowding as a major cause for InGaN LED degradation at extreme high current density

     Article • October 2021, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

178. 
     Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

     Article • Journal of Physics D Applied Physics, September 2021, Institute of Physics Publishing

     Carlo De Santi

179. 
     Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: from interdiffusion effects to hot-electrons degradation

     Article • September 2021, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

180. 
     Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices

     Article • Crystals, August 2021, MDPI AG

     Carlo De Santi

181. 
     Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

     Article • Journal of Physics D Applied Physics, August 2021, Institute of Physics Publishing

     Carlo De Santi

182. 
     Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs

     Article • Microelectronics Reliability, August 2021, Elsevier

     Carlo De Santi

183. 
     UV-Based Technologies for SARS-CoV2 Inactivation: Status and Perspectives

     Article • Electronics, July 2021, MDPI AG

     Carlo De Santi

184. 
     Glass-ceramic composites for high-power white-light-emitting diodes

     Article • Ceramics International, July 2021, Elsevier

     Carlo De Santi

185. 
     Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy

     Article • Journal of Physics D Applied Physics, June 2021, Institute of Physics Publishing

     Carlo De Santi, Manuel Fregolent

186. 
     Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications

     Article • Journal of Physics D Applied Physics, May 2021, Institute of Physics Publishing

     Carlo De Santi, Professor John Edward Bowers

187. 
     A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs

     Article • IEEE Electron Device Letters, May 2021, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

188. 
     Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

     Article • Materials, April 2021, MDPI AG

     Carlo De Santi

189. 
     Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

     Article • Micromachines, April 2021, MDPI AG

     Carlo De Santi

190. 
     Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: a model based on rate equations

     Article • March 2021, SPIE

     Carlo De Santi

191. 
     How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs?: identification of SRH centers and modeling of trap profile

     Article • March 2021, SPIE

     Carlo De Santi

192. 
     Hydrogen-terminated diamond MESFETs: operating principles, static and dynamic performance, and reliability

     Article • March 2021, SPIE

     Carlo De Santi

193. 
     Impact of dislocation density on performance and reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on silicon

     Article • March 2021, SPIE

     Carlo De Santi

194. 
     Trapping processes and band discontinuities in Ga2O3 FinFETs investigated by dynamic characterization and optically-assisted measurements

     Article • March 2021, SPIE

     Carlo De Santi

195. 
     A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level

     Article • March 2021, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

196. 
     Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs

     Article • March 2021, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

197. 
     Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics

     Article • Materials, February 2021, MDPI AG

     Carlo De Santi

198. 
     Degradation of 1.3 μm InAs Quantum-Dot Laser Diodes: Impact of Dislocation Density and Number of Quantum Dot Layers

     Article • IEEE Journal of Quantum Electronics, February 2021, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi, Professor John Edward Bowers

199. 
     Full Optical Contactless Thermometry Based on LED Photoluminescence

     Article • IEEE Transactions on Instrumentation and Measurement, January 2021, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

200. 
     Cumulative Hot-Electron Trapping in GaN-Based Power HEMTs Observed by an Ultra-Fast (10V/ns) on-Wafer Methodology

     Article • IEEE Journal of Emerging and Selected Topics in Power Electronics, January 2021, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

201. 
     Degradation mechanisms of InGaN visible LEDs and AlGaN UV LEDs

     Article • January 2021, Elsevier

     Carlo De Santi

202. 
     Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation

     Article • Applied Physics Letters, December 2020, American Institute of Physics

     Carlo De Santi, Manuel Fregolent

203. 
     Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3 gate insulator

     Article • Applied Physics Letters, November 2020, American Institute of Physics

     Carlo De Santi

204. 
     Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors

     Article • Semiconductor Science and Technology, November 2020, Institute of Physics Publishing

     Carlo De Santi

205. 
     Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors

     Article • Electronics, November 2020, MDPI AG

     Carlo De Santi

206. 
     A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects

     Article • Microelectronics Reliability, November 2020, Elsevier

     Carlo De Santi

207. 
     Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons

     Article • Microelectronics Reliability, November 2020, Elsevier

     Carlo De Santi

208. 
     Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements

     Article • Microelectronics Reliability, November 2020, Elsevier

     Carlo De Santi

209. 
     Exploration of gate trench module for vertical GaN devices

     Article • Microelectronics Reliability, November 2020, Elsevier

     Carlo De Santi

210. 
     GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress

     Article • Microelectronics Reliability, November 2020, Elsevier

     Carlo De Santi

211. 
     Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy

     Article • Microelectronics Reliability, November 2020, Elsevier

     Carlo De Santi

212. 
     OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution

     Article • Microelectronics Reliability, November 2020, Elsevier

     Carlo De Santi

213. 
     Reliability of H-terminated diamond MESFETs in high power dissipation operating condition

     Article • Microelectronics Reliability, November 2020, Elsevier

     Carlo De Santi

214. 
     Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation

     Article • Photonics Research, October 2020, Optical Society of America (OSA)

     Carlo De Santi

215. 
     Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

     Article • Materials, October 2020, MDPI AG

     Carlo De Santi

216. 
     Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy

     Article • Journal of Physics D Applied Physics, October 2020, Institute of Physics Publishing

     Carlo De Santi

217. 
     Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices

     Article • October 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

218. 
     The 2020 UV emitter roadmap

     Article • Journal of Physics D Applied Physics, September 2020, Institute of Physics Publishing

     Carlo De Santi, Prof. Dr. Markus Weyers

219. 
     GaN Vertical p–i–n Diodes in Avalanche Regime: Time-Dependent Behavior and Degradation

     Article • IEEE Electron Device Letters, September 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

220. 
     Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs

     Article • July 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

221. 
     Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives

     Article • Journal of Applied Physics, June 2020, American Institute of Physics

     Carlo De Santi

222. 
     Efficiency and Catastrophic Failure of High-Power Blue GaN LEDs During Extremely High Temperature and Current Stress

     Article • IEEE Transactions on Device and Materials Reliability, June 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

223. 
     Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements

     Article • Applied Physics Express, May 2020, Institute of Physics Publishing

     Carlo De Santi

224. 
     Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process

     Article • Journal of Applied Physics, May 2020, American Institute of Physics

     Carlo De Santi

225. 
     Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions

     Article • April 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

226. 
     Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors

     Article • April 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

227. 
     Charge trapping and degradation of Ga2O3 isolation structures for power electronics

     Article • March 2020, SPIE

     Carlo De Santi

228. 
     Degradation effects and origin in H-terminated diamond MESFETs

     Article • March 2020, SPIE

     Carlo De Santi

229. 
     Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures

     Article • IEEE Electron Device Letters, March 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

230. 
     Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon

     Article • IEEE Journal of Selected Topics in Quantum Electronics, March 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi, Professor John Edward Bowers

231. 
     Dependence of degradation on InGaN quantum well position: a study based on color coded structures

     Article • February 2020, SPIE

     Carlo De Santi

232. 
     Demonstration of current-dependent degradation of quantum-dot lasers grown on silicon: role of defect diffusion processes

     Article • February 2020, SPIE

     Carlo De Santi, Professor John Edward Bowers

233. 
     Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition

     Article • February 2020, SPIE

     Carlo De Santi

234. 
     Degradation mechanisms of 1.6 W blue semiconductor lasers: effect on subthreshold optical power and power spectral density

     Article • February 2020, SPIE

     Carlo De Santi

235. 
     Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements

     Article • February 2020, SPIE

     Carlo De Santi

236. 
     Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications

     Article • IEEE Transactions on Electron Devices, February 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

237. 
     Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

     Article • Applied Physics Express, February 2020, Institute of Physics Publishing

     Carlo De Santi

238. 
     Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

     Article • Applied Physics Express, January 2020, Institute of Physics Publishing

     Carlo De Santi

239. 
     Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

     Article • phys stat sol (a), January 2020, Wiley

     Carlo De Santi

240. 
     Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

     Article • Micromachines, January 2020, MDPI AG

     Carlo De Santi

241. 
     Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction

     Article • IEEE Transactions on Electron Devices, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

242. 
     Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements

     Article • IEEE Transactions on Electron Devices, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

243. 
     A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs

     Article • IEEE Transactions on Electron Devices, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

244. 
     Cause and Effects of off-State Degradation in Hydrogen-Terminated Diamond MESFETs

     Article • IEEE Transactions on Electron Devices, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

245. 
     Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon

     Article • IEEE Transactions on Electron Devices, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

246. 
     Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias

     Article • Microelectronics Reliability, September 2019, Elsevier

     Carlo De Santi

247. 
     Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs

     Article • Microelectronics Reliability, September 2019, Elsevier

     Carlo De Santi

248. 
     Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs

     Article • Microelectronics Reliability, September 2019, Elsevier

     Carlo De Santi

249. 
     Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration

     Article • Microelectronics Reliability, September 2019, Elsevier

     Carlo De Santi

250. 
     Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects

     Article • Microelectronics Reliability, September 2019, Elsevier

     Carlo De Santi

251. 
     Stability and degradation of isolation and surface in Ga2O3 devices

     Article • Microelectronics Reliability, September 2019, Elsevier

     Carlo De Santi

252. 
     Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

     Article • Applied Physics Letters, July 2019, American Institute of Physics

     Carlo De Santi

253. 
     Enhanced semiclassical simulation of InGaN/GaN multi-quantum-well solar cells

     Article • July 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

254. 
     Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers

     Article • IEEE Journal of Quantum Electronics, June 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi, Professor John Edward Bowers

255. 
     Degradation processes of 280 nm high power DUV LEDs: impact on parasitic luminescence

     Article • Japanese Journal of Applied Physics, May 2019, Japan Society of Applied Physics

     Carlo De Santi

256. 
     Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs

     Article • Applied Physics Express, March 2019, Japan Society of Applied Physics

     Carlo De Santi

257. 
     Sintered glass ceramics for high-power white-light-emitting diodes (Conference Presentation)

     Article • March 2019, SPIE

     Carlo De Santi

258. 
     Challenges for highly-reliable GaN-based LEDs

     Article • March 2019, SPIE

     Carlo De Santi

259. 
     Degradation mechanisms of InAs quantum dot 1.3 um laser diodes epitaxially grown on silicon

     Article • March 2019, SPIE

     Carlo De Santi, Professor John Edward Bowers

260. 
     Degradation physics of GaN-based lateral and vertical devices

     Article • March 2019, SPIE

     Carlo De Santi

261. 
     Evidence for avalanche generation in reverse-biased InGaN LEDs

     Article • March 2019, SPIE

     Carlo De Santi

262. 
     GaN-based lateral and vertical devices: physical mechanisms limiting stability and reliability

     Article • March 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

263. 
     Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis

     Article • March 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

264. 
     Origin of the low-forward leakage current in InGaN-based LEDs

     Article • March 2019, SPIE

     Carlo De Santi

265. 
     Gate Reliability of p-GaN gate AlGaN/GaN High Electron Mobility Transistors

     Article • IEEE Electron Device Letters, January 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

266. 
     Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors

     Article • IEEE Transactions on Electron Devices, January 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

267. 
     High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes

     Article • IEEE Transactions on Electron Devices, January 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

268. 
     Breakdown Walkout in Polarization-Doped Vertical GaN Diodes

     Article • IEEE Transactions on Electron Devices, January 2019, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

269. 
     Reliability of Ultraviolet Light-Emitting Diodes

     Article • January 2019, Springer Science + Business Media

     Carlo De Santi

270. 
     Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: study of walkout due to residual carbon concentration

     Article • December 2018, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

271. 
     Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effects

     Article • December 2018, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

272. 
     Evidence of optically induced degradation in gallium nitride optoelectronic devices

     Article • Applied Physics Express, October 2018, Japan Society of Applied Physics

     Carlo De Santi

273. 
     Current induced degradation study on state of the art DUV LEDs

     Article • Microelectronics Reliability, September 2018, Elsevier

     Carlo De Santi

274. 
     Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits

     Article • Microelectronics Reliability, September 2018, Elsevier

     Carlo De Santi

275. 
     Degradation of GaN-on-GaN vertical diodes submitted to high current stress

     Article • Microelectronics Reliability, September 2018, Elsevier

     Carlo De Santi

276. 
     Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments

     Article • Microelectronics Reliability, September 2018, Elsevier

     Carlo De Santi

277. 
     Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress

     Article • Microelectronics Reliability, September 2018, Elsevier

     Carlo De Santi

278. 
     Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes

     Article • Microelectronics Reliability, September 2018, Elsevier

     Carlo De Santi

279. 
     On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs

     Article • Microelectronics Reliability, September 2018, Elsevier

     Carlo De Santi

280. 
     Reliability of Blue-Emitting Eu2+-Doped Phosphors for Laser-Lighting Applications

     Article • Materials, August 2018, MDPI AG

     Carlo De Santi

281. 
     Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs

     Article • IEEE Electron Device Letters, July 2018, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

282. 
     Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications

     Article • IET Power Electronics, April 2018, the Institution of Engineering and Technology (the IET)

     Carlo De Santi

283. 
     The 2018 GaN power electronics roadmap

     Article • Journal of Physics D Applied Physics, March 2018, Institute of Physics Publishing

     Ashwani Kumar, Carlo De Santi

284. 
     Degradation of vertical GaN FETs under gate and drain stress

     Article • March 2018, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

285. 
     Degradation processes and origin in InGaN-based high-power photodetectors

     Article • February 2018, SPIE

     Carlo De Santi

286. 
     Defect-related degradation of III-V/Silicon 1.55 µm DBR laser diodes

     Article • February 2018, SPIE

     Carlo De Santi

287. 
     Defect-generation and diffusion in (In)AlGaN-based UV-B LEDs submitted to constant current stress

     Article • February 2018, SPIE

     Carlo De Santi

288. 
     GaN-Based Laser Wireless Power Transfer System

     Article • Materials, January 2018, MDPI AG

     Carlo De Santi

289. 
     Positive and negative threshold voltage instabilities in GaN-based transistors

     Article • Microelectronics Reliability, January 2018, Elsevier

     Carlo De Santi

290. 
     2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal

     Article • IEEE Transactions on Electron Devices, January 2018, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

291. 
     Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs

     Article • IEEE Transactions on Electron Devices, January 2018, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

292. 
     Physical mechanisms limiting the performance and the reliability of GaN-based LEDs

     Article • January 2018, Elsevier

     Carlo De Santi

293. 
     Internal checkup illumination sources for METIS coronagraph on solar orbiter

     Article • November 2017, SPIE

     Carlo De Santi

294. 
     Laser-Based Lighting: Experimental Analysis and Perspectives

     Article • Materials, October 2017, MDPI AG

     Carlo De Santi

295. 
     Understanding the degradation processes of GaN based LEDs submitted to extremely high current density

     Article • Microelectronics Reliability, September 2017, Elsevier

     Carlo De Santi

296. 
     Degradation of InGaN-based MQW solar cells under 405 nm laser excitation

     Article • Microelectronics Reliability, September 2017, Elsevier

     Carlo De Santi

297. 
     Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

     Article • IEEE Transactions on Electron Devices, September 2017, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

298. 
     Long-term degradation of InGaN-based laser diodes: Role of defects

     Article • Microelectronics Reliability, September 2017, Elsevier

     Carlo De Santi

299. 
     Degradation Mechanisms of Heterogeneous III-V/Silicon 1.55- $\mu \text{m}$ DBR Laser Diodes

     Article • IEEE Journal of Quantum Electronics, August 2017, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi, Professor John Edward Bowers

300. 
     Chip-Level Degradation of InGaN-Based Optoelectronic Devices

     Article • July 2017, Springer Science + Business Media

     Carlo De Santi

301. 
     Effect of Varying Three-Dimensional Strain on the Emission Properties of Light-Emitting Diodes Based on (In,Ga)N/GaN Nanowires

     Article • Physical Review Applied, April 2017, American Physical Society (APS)

     Carlo De Santi

302. 
     Reliability and failure analysis in power GaN-HEMTs: An overview

     Article • April 2017, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

303. 
     Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

     Article • April 2017, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

304. 
     Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs

     Article • Photonics Research, March 2017, Optical Society of America (OSA)

     Carlo De Santi

305. 
     Failure of High Power LEDs Submitted to EOS: Dependence on Device Layout and Pulse Properties

     Article • IEEE Transactions on Device and Materials Reliability, March 2017, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

306. 
     Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress

     Article • February 2017, SPIE

     Carlo De Santi

307. 
     Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation

     Article • February 2017, SPIE

     Carlo De Santi

308. 
     GaN HEMTs with p-GaN gate: field- and time-dependent degradation

     Article • February 2017, SPIE

     Carlo De Santi

309. 
     Defect-Related Degradation of AlGaN-Based UV-B LEDs

     Article • IEEE Transactions on Electron Devices, January 2017, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

310. 
     Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities

     Article • September 2016, Springer Science + Business Media

     Carlo De Santi

311. 
     Degradation of InGaN-based LEDs related to charge diffusion and build-up

     Article • Microelectronics Reliability, September 2016, Elsevier

     Carlo De Santi

312. 
     Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs

     Article • Microelectronics Reliability, September 2016, Elsevier

     Carlo De Santi

313. 
     Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes

     Article • Microelectronics Reliability, September 2016, Elsevier

     Carlo De Santi

314. 
     High-Resolution Cathodoluminescence Investigation of Degradation Processes in InGaN Green Laser Diodes

     Article • Microscopy and Microanalysis, July 2016, Cambridge University Press

     Carlo De Santi

315. 
     Field-dependent degradation mechanisms in GaN-based HEMTs

     Article • July 2016, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

316. 
     Degradation of UV-A LEDs: Physical Origin and Dependence on Stress Conditions

     Article • IEEE Transactions on Device and Materials Reliability, June 2016, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

317. 
     Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

     Article • IEEE Transactions on Electron Devices, June 2016, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

318. 
     Reliability of Gallium Nitride microwave transistors

     Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

319. 
     Experimental Demonstration of Time-Dependent Breakdown in GaN-Based Light Emitting Diodes

     Article • IEEE Electron Device Letters, May 2016, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

320. 
     Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties

     Article • March 2016, SPIE

     Carlo De Santi

321. 
     Aging behavior, reliability, and failure physics of GaN-based optoelectronic components

     Article • March 2016, SPIE

     Carlo De Santi

322. 
     Role of defects in the thermal droop of InGaN-based light emitting diodes

     Article • Journal of Applied Physics, March 2016, American Institute of Physics

     Carlo De Santi

323. 
     Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework

     Article • March 2016, SPIE

     Carlo De Santi

324. 
     Nanoscale Investigation of Degradation and Wavelength Fluctuations in InGaN-Based Green Laser Diodes

     Article • IEEE Transactions on Nanotechnology, March 2016, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

325. 
     A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

     Article • Journal of Applied Physics, January 2016, American Institute of Physics

     Carlo De Santi

326. 
     Reliability of mid-power LEDs for lighting applications

     Article • January 2016, the Institution of Engineering and Technology (the IET)

     Carlo De Santi

327. 
     Towards high reliability GaN LEDs: Understanding the physical origin of gradual and catastrophic failure

     Article • November 2015, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

328. 
     Analysis of the mechanisms limiting the reliability of retrofit LED lamps

     Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

329. 
     Long-term degradation mechanisms of mid-power LEDs for lighting applications

     Article • Microelectronics Reliability, August 2015, Elsevier

     Carlo De Santi

330. 
     Failure causes and mechanisms of retrofit LED lamps

     Article • Microelectronics Reliability, August 2015, Elsevier

     Carlo De Santi

331. 
     Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects

     Article • Microelectronics Reliability, August 2015, Elsevier

     Carlo De Santi

332. 
     Degradation mechanisms and lifetime of state-of-the-art green laser diodes

     Article • phys stat sol (a), March 2015, Wiley

     Carlo De Santi

333. 
     Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles

     Article • March 2015, SPIE

     Carlo De Santi

334. 
     Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs

     Article • March 2015, SPIE

     Carlo De Santi

335. 
     Defects in GaN-based LEDs: impact on internal quantum efficiency and on reliability

     Article • March 2015, SPIE

     Carlo De Santi

336. 
     Degradation of InGaN based green laser kinetics and driving forces diodes

     Article • January 2015, the Institution of Engineering and Technology (the IET)

     Carlo De Santi

337. 
     Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

     Article • Applied Physics Letters, November 2014, American Institute of Physics

     Carlo De Santi

338. 
     Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors

     Article • September 2014, Japan Society of Applied Physics

     Carlo De Santi

339. 
     Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage

     Article • Microelectronics Reliability, September 2014, Elsevier

     Carlo De Santi

340. 
     ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms

     Article • Microelectronics Reliability, September 2014, Elsevier

     Carlo De Santi

341. 
     Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors

     Article • Applied Physics Letters, August 2014, American Institute of Physics

     Carlo De Santi

342. 
     Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

     Article • IEEE Transactions on Electron Devices, October 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

343. 
     Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress

     Article • Microelectronic Engineering, September 2013, Elsevier

     Carlo De Santi

344. 
     Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes

     Article • Microelectronics Reliability, September 2013, Elsevier

     Carlo De Santi

345. 
     GaN-HEMTs devices with single- and double-heterostructure for power switching applications

     Article • April 2013, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

346. 
     Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate

     Article • IEEE Electron Device Letters, March 2012, Institute of Electrical & Electronics Engineers (IEEE)

     Carlo De Santi

347. 
     Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS

     Article • January 2012, SPIE

     Carlo De Santi

348. 
     Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency

     Article • Microelectronics Reliability, September 2011, Elsevier

     Carlo De Santi

349. 
     Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy

     Article • Applied Physics Letters, August 2011, American Institute of Physics

     Carlo De Santi