All Stories

  1. Modeling the Electrical Degradation of Micro-Transfer Printed 845 nm VCSILs for Silicon Photonics

    Article • IEEE Transactions on Electron Devices, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  2. Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

    Article • IEEE Transactions on Electron Devices, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  3. Modeling of the electrical characteristics and degradation mechanisms of UV-C LEDs

    Article • IEEE Photonics Journal, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  4. V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis

    Article • IEEE Transactions on Electron Devices, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  5. TCAD Modeling and Simulation of Dark Current-Voltage Characteristics in High-Periodicity InGaN/GaN Multiple-Quantum-Wells (MQWs) Solar Cells

    Article • IEEE Journal of Photovoltaics, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  6. Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization

    Article • ACS Photonics, November 2023, American Chemical Society (ACS)

    Carlo De Santi

  7. A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation

    Article • Microelectronics Reliability, November 2023, Elsevier

    Carlo De Santi

  8. Early failure of high-power white LEDs for outdoor applications under extreme electrical stress: Role of silicone encapsulant

    Article • Microelectronics Reliability, November 2023, Elsevier

    Carlo De Santi

  9. Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: A temperature-dependent analysis

    Article • Microelectronics Reliability, November 2023, Elsevier

    Carlo De Santi

  10. Threshold voltage instability in SiO2-gate semi-vertical GaN trench MOSFETs grown on silicon substrate

    Article • Microelectronics Reliability, November 2023, Elsevier

    Carlo De Santi

  11. Trade-off between gate leakage current and threshold voltage stability in power HEMTs during ON-state and OFF-state stress

    Article • Microelectronics Reliability, November 2023, Elsevier

    Carlo De Santi

  12. Bias-dependent degradation of single quantum well on InGaN-based light emitting diode

    Article • Microelectronics Reliability, November 2023, Elsevier

    Carlo De Santi

  13. Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness

    Article • Microelectronics Reliability, November 2023, Elsevier

    Carlo De Santi

  14. On the importance of Fast and Accurate LED Optical and Thermal Characterization: from visible use cases to UV technologies

    Article • September 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  15. Addressing the electrical degradation of 845 nm micro-transfer printed VCSILs through TCAD simulations

    Article • September 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  16. Modeling the electrical characteristic and degradation mechanisms of UV-C LEDs

    Article • September 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  17. Gate leakage modeling in lateral β -Ga2O3 MOSFETs with Al2O3 gate dielectric

    Article • Applied Physics Letters, September 2023, American Institute of Physics

    Carlo De Santi, Manuel Fregolent

  18. Solid State Lighting for horticolture: impact of LED reliability on light spectrum and intensity

    Article • June 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  19. Performance and Degradation of Commercial Ultraviolet‐C Light‐Emitting Diodes for Disinfection Purposes

    Article • physica status solidi (a), May 2023, Wiley

    Carlo De Santi

  20. Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations

    Article • Applied Physics Letters, May 2023, American Institute of Physics

    Carlo De Santi, Dr. Francesco Piva

  21. Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations

    Article • Applied Physics Letters, April 2023, American Institute of Physics

    Carlo De Santi, Manuel Fregolent

  22. Influence of Mg-doping on UV-C LEDs and model of optical power degradation

    Article • Applied Physics Letters, April 2023, American Institute of Physics

    Carlo De Santi, Dr. Francesco Piva

  23. Dynamical properties and performances of ß-Ga2O3 UVC photodetectors of extreme solar blindness

    Article • March 2023, SPIE

    Carlo De Santi

  24. Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits

    Article • March 2023, SPIE

    Carlo De Santi

  25. Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy

    Article • March 2023, SPIE

    Carlo De Santi

  26. Degradation of GaN-based InGaN-GaN MQWs solar cells caused by thermally-activated diffusion

    Article • March 2023, SPIE

    Carlo De Santi

  27. Experimental analysis of degradation of multi-quantum well GaN based solar cells under current stress

    Article • March 2023, SPIE

    Carlo De Santi

  28. Improving the reliability of InAs quantum-dot laser diodes for silicon photonics: the role of trapping layers and misfit-dislocation density

    Article • March 2023, SPIE

    Carlo De Santi

  29. Degradation mechanisms of laser diodes for silicon photonics applications

    Article • March 2023, SPIE

    Carlo De Santi

  30. III-N optoelectronic devices: understanding the physics of electro-optical degradation

    Article • March 2023, SPIE

    Carlo De Santi

  31. Injection-limited efficiency of InGaN LEDs and impact on electro-optical performance and ageing: a case study

    Article • March 2023, SPIE

    Carlo De Santi

  32. Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques

    Article • March 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Manuel Fregolent, Carlo De Santi

  33. High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps

    Article • March 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  34. Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests

    Article • March 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  35. Optically Induced Degradation Due to Thermally Activated Diffusion in GaN-Based InGaN/GaN MQW Solar Cells

    Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  36. Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

    Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  37. Degradation of GaN-Based Multiple Quantum Wells Solar Cells Under Forward Bias: Investigation Based on Optical Measurements and Steady-State Photocapacitance

    Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  38. Understanding the optical degradation of 845nm micro-transfer-printed VCSILs for photonic integrated circuits

    Article • IEEE Journal of Quantum Electronics, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  39. On the CET-Map Ill-Posed Inversion Problem: Theory and Application to GaN HEMTs

    Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  40. Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm Algan/Gan Hemts for Power RF Applications

    Article • IEEE Transactions on Device and Materials Reliability, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  41. Status of Performance and Reliability of 265 nm Commercial UV-C LEDs in 2023

    Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  42. Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells

    Article • IEEE Journal of Photovoltaics, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  43. Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability

    Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  44. Dynamic Behavior of Threshold Voltage and $\textit{I}_{\text{D}}$–$\textit{V}_{\text{DS}}$ Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect

    Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  45. Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors

    Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi, Manuel Fregolent

  46. Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results

    Article • physica status solidi (a), November 2022, Wiley

    Carlo De Santi

  47. GaN-Based Lateral and Vertical Devices

    Article • November 2022, Springer Science + Business Media

    Carlo De Santi

  48. Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

    Article • Microelectronics Reliability, November 2022, Elsevier

    Carlo De Santi

  49. Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs

    Article • Microelectronics Reliability, November 2022, Elsevier

    Carlo De Santi

  50. Impact of a defect trapping layer on the reliability of 1.3 μm quantum dot laser diodes grown on silicon

    Article • Microelectronics Reliability, November 2022, Elsevier

    Carlo De Santi

  51. Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 nm laser excitation

    Article • Microelectronics Reliability, November 2022, Elsevier

    Carlo De Santi

  52. Comparison between Cu(In,Ga)Se2 solar cells with different back contacts submitted to current stress

    Article • Microelectronics Reliability, November 2022, Elsevier

    Carlo De Santi

  53. Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

    Article • Microelectronics Reliability, November 2022, Elsevier

    Carlo De Santi

  54. Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs

    Article • Microelectronics Reliability, November 2022, Elsevier

    Carlo De Santi

  55. Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

    Article • Microelectronics Reliability, November 2022, Elsevier

    Carlo De Santi

  56. Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs

    Article • Microelectronics Reliability, November 2022, Elsevier

    Carlo De Santi

  57. Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode

    Article • Micromachines, August 2022, MDPI AG

    Carlo De Santi

  58. Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling

    Article • Journal of Applied Physics, June 2022, American Institute of Physics

    Carlo De Santi

  59. Cryogenic Ultra-Fast Bias Temperature Instability Trap Profiling of SiC MOSFETs

    Article • May 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  60. Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling

    Article • Applied Physics Letters, April 2022, American Institute of Physics

    Manuel Fregolent, Carlo De Santi

  61. Study and characterization of GaN MOS capacitors: Planar vs trench topographies

    Article • Applied Physics Letters, April 2022, American Institute of Physics

    Carlo De Santi

  62. Time-dependent degradation of hydrogen-terminated diamond MESFETs

    Article • March 2022, SPIE

    Carlo De Santi

  63. Conduction properties and threshold voltage instability in β-Ga2O3 MOSFETs

    Article • March 2022, SPIE

    Manuel Fregolent, Carlo De Santi

  64. Deep levels and conduction processes in nitrogen-implanted Ga2O3 Schottky barrier diodes

    Article • March 2022, SPIE

    Manuel Fregolent, Carlo De Santi

  65. Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers

    Article • March 2022, SPIE

    Dr. Marco Peroni, Carlo De Santi

  66. Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

    Article • March 2022, SPIE

    Carlo De Santi

  67. GaN-based solar cells degradation kinetics investigated at high temperature under high-intensity 405nm optical stress

    Article • March 2022, SPIE

    Carlo De Santi

  68. On the performance and reliability of state-of-the-art commercial UV-C LEDs for disinfection purposes

    Article • March 2022, SPIE

    Carlo De Santi

  69. UV LED reliability: degradation mechanisms and challenges

    Article • March 2022, SPIE

    Carlo De Santi

  70. Investigation of deep level defects in n-type GaAsBi

    Article • March 2022, SPIE

    Manuel Fregolent, Carlo De Santi

  71. Analysis of dislocation-related and point-defects in III-As layers by extensive DLTS study

    Article • March 2022, SPIE

    Carlo De Santi

  72. Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

    Article • March 2022, SPIE

    Carlo De Santi

  73. Modeling the effect of spatial position and concentration of defects on optical degradation of InGaN/GaN multi quantum well light emitting diodes

    Article • March 2022, SPIE

    Carlo De Santi

  74. Optical degradation of InAs quantum-dot lasers on silicon: dependence on temperature and on diffusion processes

    Article • March 2022, SPIE

    Carlo De Santi

  75. Optical temperature measurement across IR opaque Iayers by means of visible excitation and photoluminescence

    Article • March 2022, SPIE

    Carlo De Santi

  76. Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature

    Article • March 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  77. Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier

    Article • March 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  78. GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse

    Article • March 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  79. Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs

    Article • March 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  80. Modeling Hot-Electron Trapping in GaN-based HEMTs

    Article • March 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  81. Reliability of Commercial UVC LEDs: 2022 State-of-the-Art

    Article • Electronics, February 2022, MDPI AG

    Carlo De Santi

  82. Defects and Reliability of GaN‐Based LEDs: Review and Perspectives

    Article • physica status solidi (a), February 2022, Wiley

    Carlo De Santi

  83. Trap-state mapping to model GaN transistors dynamic performance

    Article • Scientific Reports, February 2022, Springer Science + Business Media

    Carlo De Santi

  84. Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence

    Article • Journal of Applied Physics, January 2022, American Institute of Physics

    Carlo De Santi

  85. Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis

    Article • Journal of Physics D Applied Physics, January 2022, Institute of Physics Publishing

    Carlo De Santi

  86. Origin of the Diffusion-Related Optical Degradation of 1.3 μm Inas QD-LDs Epitaxially Grown on Silicon Substrate

    Article • IEEE Journal of Selected Topics in Quantum Electronics, January 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi, Professor John Edward Bowers

  87. Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices

    Article • IEEE Transactions on Electron Devices, January 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  88. Analysis of current transport layer localized resistivity increase after high stress on InGaN LEDs

    Article • IEEE Journal of Emerging and Selected Topics in Industrial Electronics, January 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  89. Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes

    Article • Journal of Applied Physics, December 2021, American Institute of Physics

    Manuel Fregolent, Carlo De Santi

  90. Charge Trapping in GaN Power Transistors: Challenges and Perspectives

    Article • December 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  91. GaN-based power devices: Physics, reliability, and perspectives

    Article • Journal of Applied Physics, November 2021, American Institute of Physics

    Carlo De Santi

  92. A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics

    Article • Electronics, November 2021, MDPI AG

    Carlo De Santi, Professor John Edward Bowers

  93. Dynamic and Capacitive Characterization of 3D GaN n-p-n Vertical Fin-FETs

    Article • November 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Manuel Fregolent, Carlo De Santi

  94. Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs

    Article • November 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  95. Microstructural Degradation Investigations of OFF-State Stressed 0.15 μm RF AlGaN/GaN HEMTs: Failure Mode related Breakdown

    Article • November 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  96. Review on the degradation of GaN-based lateral power transistors

    Article • e-Prime - Advances in Electrical Engineering Electronics and Energy, November 2021, Elsevier

    Manuel Fregolent, Carlo De Santi

  97. Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate

    Article • Microelectronics Reliability, November 2021, Elsevier

    Carlo De Santi

  98. Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode

    Article • Microelectronics Reliability, November 2021, Elsevier

    Carlo De Santi

  99. Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes

    Article • Microelectronics Reliability, November 2021, Elsevier

    Carlo De Santi

  100. Vertical GaN devices: Process and reliability

    Article • Microelectronics Reliability, November 2021, Elsevier

    Carlo De Santi

  101. Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature

    Article • Microelectronics Reliability, November 2021, Elsevier

    Carlo De Santi

  102. Electrical, optical characterization and degradation of Cu(InGa)Se2 devices with fluorine-doped tin oxide back contact

    Article • Microelectronics Reliability, November 2021, Elsevier

    Carlo De Santi

  103. Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress

    Article • Microelectronics Reliability, November 2021, Elsevier

    Carlo De Santi

  104. Nonequilibrium Green’s Function Modeling of Trap-Assisted Tunneling in InxGa1−xN /GaN Light-Emitting Diodes

    Article • Physical Review Applied, October 2021, American Physical Society (APS)

    Carlo De Santi

  105. Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

    Article • Journal of Applied Physics, October 2021, American Institute of Physics

    Carlo De Santi

  106. Current crowding as a major cause for InGaN LED degradation at extreme high current density

    Article • October 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  107. Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

    Article • Journal of Physics D Applied Physics, September 2021, Institute of Physics Publishing

    Carlo De Santi

  108. Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: from interdiffusion effects to hot-electrons degradation

    Article • September 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  109. Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices

    Article • Crystals, August 2021, MDPI AG

    Carlo De Santi

  110. Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

    Article • Journal of Physics D Applied Physics, August 2021, Institute of Physics Publishing

    Carlo De Santi

  111. Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs

    Article • Microelectronics Reliability, August 2021, Elsevier

    Carlo De Santi

  112. UV-Based Technologies for SARS-CoV2 Inactivation: Status and Perspectives

    Article • Electronics, July 2021, MDPI AG

    Carlo De Santi

  113. Glass-ceramic composites for high-power white-light-emitting diodes

    Article • Ceramics International, July 2021, Elsevier

    Carlo De Santi

  114. Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy

    Article • Journal of Physics D Applied Physics, June 2021, Institute of Physics Publishing

    Carlo De Santi, Manuel Fregolent

  115. Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications

    Article • Journal of Physics D Applied Physics, May 2021, Institute of Physics Publishing

    Carlo De Santi, Professor John Edward Bowers

  116. A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs

    Article • IEEE Electron Device Letters, May 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  117. Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

    Article • Materials, April 2021, MDPI AG

    Carlo De Santi

  118. Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

    Article • Micromachines, April 2021, MDPI AG

    Carlo De Santi

  119. Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: a model based on rate equations

    Article • March 2021, SPIE

    Carlo De Santi

  120. How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs?: identification of SRH centers and modeling of trap profile

    Article • March 2021, SPIE

    Carlo De Santi

  121. Hydrogen-terminated diamond MESFETs: operating principles, static and dynamic performance, and reliability

    Article • March 2021, SPIE

    Carlo De Santi

  122. Impact of dislocation density on performance and reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on silicon

    Article • March 2021, SPIE

    Carlo De Santi

  123. Trapping processes and band discontinuities in Ga2O3 FinFETs investigated by dynamic characterization and optically-assisted measurements

    Article • March 2021, SPIE

    Carlo De Santi

  124. A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level

    Article • March 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  125. Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs

    Article • March 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  126. Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics

    Article • Materials, February 2021, MDPI AG

    Carlo De Santi

  127. Degradation of 1.3 μm InAs Quantum-Dot Laser Diodes: Impact of Dislocation Density and Number of Quantum Dot Layers

    Article • IEEE Journal of Quantum Electronics, February 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi, Professor John Edward Bowers

  128. Full Optical Contactless Thermometry Based on LED Photoluminescence

    Article • IEEE Transactions on Instrumentation and Measurement, January 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  129. Cumulative Hot-Electron Trapping in GaN-Based Power HEMTs Observed by an Ultra-Fast (10V/ns) on-Wafer Methodology

    Article • IEEE Journal of Emerging and Selected Topics in Power Electronics, January 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  130. Degradation mechanisms of InGaN visible LEDs and AlGaN UV LEDs

    Article • January 2021, Elsevier

    Carlo De Santi

  131. Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation

    Article • Applied Physics Letters, December 2020, American Institute of Physics

    Carlo De Santi, Manuel Fregolent

  132. Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3 gate insulator

    Article • Applied Physics Letters, November 2020, American Institute of Physics

    Carlo De Santi

  133. Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors

    Article • Semiconductor Science and Technology, November 2020, Institute of Physics Publishing

    Carlo De Santi

  134. Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors

    Article • Electronics, November 2020, MDPI AG

    Carlo De Santi

  135. A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects

    Article • Microelectronics Reliability, November 2020, Elsevier

    Carlo De Santi

  136. Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons

    Article • Microelectronics Reliability, November 2020, Elsevier

    Carlo De Santi

  137. Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements

    Article • Microelectronics Reliability, November 2020, Elsevier

    Carlo De Santi

  138. Exploration of gate trench module for vertical GaN devices

    Article • Microelectronics Reliability, November 2020, Elsevier

    Carlo De Santi

  139. GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress

    Article • Microelectronics Reliability, November 2020, Elsevier

    Carlo De Santi

  140. Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy

    Article • Microelectronics Reliability, November 2020, Elsevier

    Carlo De Santi

  141. OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution

    Article • Microelectronics Reliability, November 2020, Elsevier

    Carlo De Santi

  142. Reliability of H-terminated diamond MESFETs in high power dissipation operating condition

    Article • Microelectronics Reliability, November 2020, Elsevier

    Carlo De Santi

  143. Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation

    Article • Photonics Research, October 2020, Optical Society of America (OSA)

    Carlo De Santi

  144. Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

    Article • Materials, October 2020, MDPI AG

    Carlo De Santi

  145. Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy

    Article • Journal of Physics D Applied Physics, October 2020, Institute of Physics Publishing

    Carlo De Santi

  146. Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices

    Article • October 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  147. The 2020 UV emitter roadmap

    Article • Journal of Physics D Applied Physics, September 2020, Institute of Physics Publishing

    Carlo De Santi, Prof. Dr. Markus Weyers

  148. GaN Vertical p–i–n Diodes in Avalanche Regime: Time-Dependent Behavior and Degradation

    Article • IEEE Electron Device Letters, September 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  149. Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs

    Article • July 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  150. Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives

    Article • Journal of Applied Physics, June 2020, American Institute of Physics

    Carlo De Santi

  151. Efficiency and Catastrophic Failure of High-Power Blue GaN LEDs During Extremely High Temperature and Current Stress

    Article • IEEE Transactions on Device and Materials Reliability, June 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  152. Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements

    Article • Applied Physics Express, May 2020, Institute of Physics Publishing

    Carlo De Santi

  153. Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process

    Article • Journal of Applied Physics, May 2020, American Institute of Physics

    Carlo De Santi

  154. Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions

    Article • April 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  155. Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors

    Article • April 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  156. Charge trapping and degradation of Ga2O3 isolation structures for power electronics

    Article • March 2020, SPIE

    Carlo De Santi

  157. Degradation effects and origin in H-terminated diamond MESFETs

    Article • March 2020, SPIE

    Carlo De Santi

  158. Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures

    Article • IEEE Electron Device Letters, March 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  159. Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon

    Article • IEEE Journal of Selected Topics in Quantum Electronics, March 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi, Professor John Edward Bowers

  160. Dependence of degradation on InGaN quantum well position: a study based on color coded structures

    Article • February 2020, SPIE

    Carlo De Santi

  161. Demonstration of current-dependent degradation of quantum-dot lasers grown on silicon: role of defect diffusion processes

    Article • February 2020, SPIE

    Carlo De Santi, Professor John Edward Bowers

  162. Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition

    Article • February 2020, SPIE

    Carlo De Santi

  163. Degradation mechanisms of 1.6 W blue semiconductor lasers: effect on subthreshold optical power and power spectral density

    Article • February 2020, SPIE

    Carlo De Santi

  164. Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements

    Article • February 2020, SPIE

    Carlo De Santi

  165. Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications

    Article • IEEE Transactions on Electron Devices, February 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  166. Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

    Article • Applied Physics Express, February 2020, Institute of Physics Publishing

    Carlo De Santi

  167. Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

    Article • Applied Physics Express, January 2020, Institute of Physics Publishing

    Carlo De Santi

  168. Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

    Article • physica status solidi (a), January 2020, Wiley

    Carlo De Santi

  169. Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

    Article • Micromachines, January 2020, MDPI AG

    Carlo De Santi

  170. Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction

    Article • IEEE Transactions on Electron Devices, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  171. Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements

    Article • IEEE Transactions on Electron Devices, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  172. A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs

    Article • IEEE Transactions on Electron Devices, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  173. Cause and Effects of off-State Degradation in Hydrogen-Terminated Diamond MESFETs

    Article • IEEE Transactions on Electron Devices, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  174. Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon

    Article • IEEE Transactions on Electron Devices, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  175. Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias

    Article • Microelectronics Reliability, September 2019, Elsevier

    Carlo De Santi

  176. Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs

    Article • Microelectronics Reliability, September 2019, Elsevier

    Carlo De Santi

  177. Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs

    Article • Microelectronics Reliability, September 2019, Elsevier

    Carlo De Santi

  178. Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration

    Article • Microelectronics Reliability, September 2019, Elsevier

    Carlo De Santi

  179. Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects

    Article • Microelectronics Reliability, September 2019, Elsevier

    Carlo De Santi

  180. Stability and degradation of isolation and surface in Ga2O3 devices

    Article • Microelectronics Reliability, September 2019, Elsevier

    Carlo De Santi

  181. Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

    Article • Applied Physics Letters, July 2019, American Institute of Physics

    Carlo De Santi

  182. Enhanced semiclassical simulation of InGaN/GaN multi-quantum-well solar cells

    Article • July 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  183. Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers

    Article • IEEE Journal of Quantum Electronics, June 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi, Professor John Edward Bowers

  184. Degradation processes of 280 nm high power DUV LEDs: impact on parasitic luminescence

    Article • Japanese Journal of Applied Physics, May 2019, Japan Society of Applied Physics

    Carlo De Santi

  185. Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs

    Article • Applied Physics Express, March 2019, Japan Society of Applied Physics

    Carlo De Santi

  186. Sintered glass ceramics for high-power white-light-emitting diodes (Conference Presentation)

    Article • March 2019, SPIE

    Carlo De Santi

  187. Challenges for highly-reliable GaN-based LEDs

    Article • March 2019, SPIE

    Carlo De Santi

  188. Degradation mechanisms of InAs quantum dot 1.3 um laser diodes epitaxially grown on silicon

    Article • March 2019, SPIE

    Carlo De Santi, Professor John Edward Bowers

  189. Degradation physics of GaN-based lateral and vertical devices

    Article • March 2019, SPIE

    Carlo De Santi

  190. Evidence for avalanche generation in reverse-biased InGaN LEDs

    Article • March 2019, SPIE

    Carlo De Santi

  191. GaN-based lateral and vertical devices: physical mechanisms limiting stability and reliability

    Article • March 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  192. Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis

    Article • March 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  193. Origin of the low-forward leakage current in InGaN-based LEDs

    Article • March 2019, SPIE

    Carlo De Santi

  194. Gate Reliability of p-GaN gate AlGaN/GaN High Electron Mobility Transistors

    Article • IEEE Electron Device Letters, January 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  195. Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors

    Article • IEEE Transactions on Electron Devices, January 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  196. High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes

    Article • IEEE Transactions on Electron Devices, January 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  197. Breakdown Walkout in Polarization-Doped Vertical GaN Diodes

    Article • IEEE Transactions on Electron Devices, January 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  198. Reliability of Ultraviolet Light-Emitting Diodes

    Article • January 2019, Springer Science + Business Media

    Carlo De Santi

  199. Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: study of walkout due to residual carbon concentration

    Article • December 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  200. Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effects

    Article • December 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  201. Evidence of optically induced degradation in gallium nitride optoelectronic devices

    Article • Applied Physics Express, October 2018, Japan Society of Applied Physics

    Carlo De Santi

  202. Current induced degradation study on state of the art DUV LEDs

    Article • Microelectronics Reliability, September 2018, Elsevier

    Carlo De Santi

  203. Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits

    Article • Microelectronics Reliability, September 2018, Elsevier

    Carlo De Santi

  204. Degradation of GaN-on-GaN vertical diodes submitted to high current stress

    Article • Microelectronics Reliability, September 2018, Elsevier

    Carlo De Santi

  205. Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments

    Article • Microelectronics Reliability, September 2018, Elsevier

    Carlo De Santi

  206. Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress

    Article • Microelectronics Reliability, September 2018, Elsevier

    Carlo De Santi

  207. Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes

    Article • Microelectronics Reliability, September 2018, Elsevier

    Carlo De Santi

  208. On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs

    Article • Microelectronics Reliability, September 2018, Elsevier

    Carlo De Santi

  209. Reliability of Blue-Emitting Eu2+-Doped Phosphors for Laser-Lighting Applications

    Article • Materials, August 2018, MDPI AG

    Carlo De Santi

  210. Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs

    Article • IEEE Electron Device Letters, July 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  211. Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications

    Article • IET Power Electronics, April 2018, the Institution of Engineering and Technology (the IET)

    Carlo De Santi

  212. The 2018 GaN power electronics roadmap

    Article • Journal of Physics D Applied Physics, March 2018, Institute of Physics Publishing

    Ashwani Kumar, Carlo De Santi

  213. Degradation of vertical GaN FETs under gate and drain stress

    Article • March 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  214. Degradation processes and origin in InGaN-based high-power photodetectors

    Article • February 2018, SPIE

    Carlo De Santi

  215. Defect-related degradation of III-V/Silicon 1.55 µm DBR laser diodes

    Article • February 2018, SPIE

    Carlo De Santi

  216. Defect-generation and diffusion in (In)AlGaN-based UV-B LEDs submitted to constant current stress

    Article • February 2018, SPIE

    Carlo De Santi

  217. GaN-Based Laser Wireless Power Transfer System

    Article • Materials, January 2018, MDPI AG

    Carlo De Santi

  218. Positive and negative threshold voltage instabilities in GaN-based transistors

    Article • Microelectronics Reliability, January 2018, Elsevier

    Carlo De Santi

  219. 2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal

    Article • IEEE Transactions on Electron Devices, January 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  220. Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs

    Article • IEEE Transactions on Electron Devices, January 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  221. Physical mechanisms limiting the performance and the reliability of GaN-based LEDs

    Article • January 2018, Elsevier

    Carlo De Santi

  222. Internal checkup illumination sources for METIS coronagraph on solar orbiter

    Article • November 2017, SPIE

    Carlo De Santi

  223. Laser-Based Lighting: Experimental Analysis and Perspectives

    Article • Materials, October 2017, MDPI AG

    Carlo De Santi

  224. Understanding the degradation processes of GaN based LEDs submitted to extremely high current density

    Article • Microelectronics Reliability, September 2017, Elsevier

    Carlo De Santi

  225. Degradation of InGaN-based MQW solar cells under 405 nm laser excitation

    Article • Microelectronics Reliability, September 2017, Elsevier

    Carlo De Santi

  226. Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

    Article • IEEE Transactions on Electron Devices, September 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  227. Long-term degradation of InGaN-based laser diodes: Role of defects

    Article • Microelectronics Reliability, September 2017, Elsevier

    Carlo De Santi

  228. Degradation Mechanisms of Heterogeneous III-V/Silicon 1.55- $\mu \text{m}$ DBR Laser Diodes

    Article • IEEE Journal of Quantum Electronics, August 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi, Professor John Edward Bowers

  229. Chip-Level Degradation of InGaN-Based Optoelectronic Devices

    Article • July 2017, Springer Science + Business Media

    Carlo De Santi

  230. Effect of Varying Three-Dimensional Strain on the Emission Properties of Light-Emitting Diodes Based on (In,Ga)N/GaN Nanowires

    Article • Physical Review Applied, April 2017, American Physical Society (APS)

    Carlo De Santi

  231. Reliability and failure analysis in power GaN-HEMTs: An overview

    Article • April 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  232. Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

    Article • April 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  233. Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs

    Article • Photonics Research, March 2017, Optical Society of America (OSA)

    Carlo De Santi

  234. Failure of High Power LEDs Submitted to EOS: Dependence on Device Layout and Pulse Properties

    Article • IEEE Transactions on Device and Materials Reliability, March 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  235. Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress

    Article • February 2017, SPIE

    Carlo De Santi

  236. Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation

    Article • February 2017, SPIE

    Carlo De Santi

  237. GaN HEMTs with p-GaN gate: field- and time-dependent degradation

    Article • February 2017, SPIE

    Carlo De Santi

  238. Defect-Related Degradation of AlGaN-Based UV-B LEDs

    Article • IEEE Transactions on Electron Devices, January 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  239. Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities

    Article • September 2016, Springer Science + Business Media

    Carlo De Santi

  240. Degradation of InGaN-based LEDs related to charge diffusion and build-up

    Article • Microelectronics Reliability, September 2016, Elsevier

    Carlo De Santi

  241. Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs

    Article • Microelectronics Reliability, September 2016, Elsevier

    Carlo De Santi

  242. Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes

    Article • Microelectronics Reliability, September 2016, Elsevier

    Carlo De Santi

  243. High-Resolution Cathodoluminescence Investigation of Degradation Processes in InGaN Green Laser Diodes

    Article • Microscopy and Microanalysis, July 2016, Cambridge University Press

    Carlo De Santi

  244. Field-dependent degradation mechanisms in GaN-based HEMTs

    Article • July 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  245. Degradation of UV-A LEDs: Physical Origin and Dependence on Stress Conditions

    Article • IEEE Transactions on Device and Materials Reliability, June 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  246. Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

    Article • IEEE Transactions on Electron Devices, June 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  247. Reliability of Gallium Nitride microwave transistors

    Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  248. Experimental Demonstration of Time-Dependent Breakdown in GaN-Based Light Emitting Diodes

    Article • IEEE Electron Device Letters, May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  249. Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties

    Article • March 2016, SPIE

    Carlo De Santi

  250. Aging behavior, reliability, and failure physics of GaN-based optoelectronic components

    Article • March 2016, SPIE

    Carlo De Santi

  251. Role of defects in the thermal droop of InGaN-based light emitting diodes

    Article • Journal of Applied Physics, March 2016, American Institute of Physics

    Carlo De Santi

  252. Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework

    Article • March 2016, SPIE

    Carlo De Santi

  253. Nanoscale Investigation of Degradation and Wavelength Fluctuations in InGaN-Based Green Laser Diodes

    Article • IEEE Transactions on Nanotechnology, March 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  254. A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

    Article • Journal of Applied Physics, January 2016, American Institute of Physics

    Carlo De Santi

  255. Reliability of mid-power LEDs for lighting applications

    Article • January 2016, the Institution of Engineering and Technology (the IET)

    Carlo De Santi

  256. Towards high reliability GaN LEDs: Understanding the physical origin of gradual and catastrophic failure

    Article • November 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  257. Analysis of the mechanisms limiting the reliability of retrofit LED lamps

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  258. Long-term degradation mechanisms of mid-power LEDs for lighting applications

    Article • Microelectronics Reliability, August 2015, Elsevier

    Carlo De Santi

  259. Failure causes and mechanisms of retrofit LED lamps

    Article • Microelectronics Reliability, August 2015, Elsevier

    Carlo De Santi

  260. Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects

    Article • Microelectronics Reliability, August 2015, Elsevier

    Carlo De Santi

  261. Degradation mechanisms and lifetime of state-of-the-art green laser diodes

    Article • phys stat sol (a), March 2015, Wiley

    Carlo De Santi

  262. Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles

    Article • March 2015, SPIE

    Carlo De Santi

  263. Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs

    Article • March 2015, SPIE

    Carlo De Santi

  264. Defects in GaN-based LEDs: impact on internal quantum efficiency and on reliability

    Article • March 2015, SPIE

    Carlo De Santi

  265. Degradation of InGaN based green laser kinetics and driving forces diodes

    Article • January 2015, the Institution of Engineering and Technology (the IET)

    Carlo De Santi

  266. Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

    Article • Applied Physics Letters, November 2014, American Institute of Physics

    Carlo De Santi

  267. Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors

    Article • September 2014, Japan Society of Applied Physics

    Carlo De Santi

  268. Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage

    Article • Microelectronics Reliability, September 2014, Elsevier

    Carlo De Santi

  269. ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms

    Article • Microelectronics Reliability, September 2014, Elsevier

    Carlo De Santi

  270. Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors

    Article • Applied Physics Letters, August 2014, American Institute of Physics

    Carlo De Santi

  271. Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

    Article • IEEE Transactions on Electron Devices, October 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  272. Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress

    Article • Microelectronic Engineering, September 2013, Elsevier

    Carlo De Santi

  273. Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes

    Article • Microelectronics Reliability, September 2013, Elsevier

    Carlo De Santi

  274. GaN-HEMTs devices with single- and double-heterostructure for power switching applications

    Article • April 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  275. Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate

    Article • IEEE Electron Device Letters, March 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi

  276. Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS

    Article • January 2012, SPIE

    Carlo De Santi

  277. Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency

    Article • Microelectronics Reliability, September 2011, Elsevier

    Carlo De Santi

  278. Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy

    Article • Applied Physics Letters, August 2011, American Institute of Physics

    Carlo De Santi