All Stories

  1. Gate leakage modeling in lateral β -Ga2O3 MOSFETs with Al2O3 gate dielectric

    Article • Applied Physics Letters, September 2023, American Institute of Physics

    Carlo De Santi, Manuel Fregolent

  2. Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations

    Article • Applied Physics Letters, April 2023, American Institute of Physics

    Carlo De Santi, Manuel Fregolent

  3. Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques

    Article • March 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Manuel Fregolent, Carlo De Santi

  4. Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors

    Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Carlo De Santi, Manuel Fregolent

  5. Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling

    Article • Applied Physics Letters, April 2022, American Institute of Physics

    Manuel Fregolent, Carlo De Santi

  6. Conduction properties and threshold voltage instability in β-Ga2O3 MOSFETs

    Article • March 2022, SPIE

    Manuel Fregolent, Carlo De Santi

  7. Deep levels and conduction processes in nitrogen-implanted Ga2O3 Schottky barrier diodes

    Article • March 2022, SPIE

    Manuel Fregolent, Carlo De Santi

  8. Investigation of deep level defects in n-type GaAsBi

    Article • March 2022, SPIE

    Manuel Fregolent, Carlo De Santi

  9. Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes

    Article • Journal of Applied Physics, December 2021, American Institute of Physics

    Manuel Fregolent, Carlo De Santi

  10. Dynamic and Capacitive Characterization of 3D GaN n-p-n Vertical Fin-FETs

    Article • November 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Manuel Fregolent, Carlo De Santi

  11. Review on the degradation of GaN-based lateral power transistors

    Article • e-Prime - Advances in Electrical Engineering Electronics and Energy, November 2021, Elsevier

    Manuel Fregolent, Carlo De Santi

  12. Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy

    Article • Journal of Physics D Applied Physics, June 2021, Institute of Physics Publishing

    Carlo De Santi, Manuel Fregolent

  13. Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation

    Article • Applied Physics Letters, December 2020, American Institute of Physics

    Carlo De Santi, Manuel Fregolent