All Stories

  1. Negative Capacitance beyond Ferroelectric Switches

    Article • ACS Applied Materials & Interfaces, June 2018, American Chemical Society (ACS)

    Ashwani Kumar

  2. Modelling the threshold voltage of normally off p channel transistors in GaN

    Article • IET Power Electronics, April 2018, the Institution of Engineering and Technology (the IET)

    Ashwani Kumar, Maria Merlyne De Souza

  3. Impact of channel thickness on the performance of an E-mode p-channel MOSHFET in GaN

    Article • Applied Physics Letters, April 2018, American Institute of Physics

    Ashwani Kumar

  4. The 2018 GaN power electronics roadmap

    Article • Journal of Physics D Applied Physics, March 2018, Institute of Physics Publishing

    Ashwani Kumar, Carlo De Santi

  5. Diffusion-Controlled Faradaic Charge Storage in High-Performance Solid Electrolyte-Gated Zinc Oxide Thin-Film Transistors

    Article • ACS Applied Materials & Interfaces, March 2018, American Chemical Society (ACS)

    Ashwani Kumar

  6. An E-Mode p-Channel GaN MOSHFET for a CMOS Compatible PMIC

    Article • IEEE Electron Device Letters, October 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Ashwani Kumar

  7. Extending the bounds of performance in E-mode p-channel GaN MOSHFETs

    Article • December 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Ashwani Kumar

  8. Nitrogen-Terminated Semiconducting Zigzag GNR FET With Negative Differential Resistance

    Article • IEEE Transactions on Nanotechnology, January 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Ashwani Kumar