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This page is a summary of: Cumulative Hot-Electron Trapping in GaN-Based Power HEMTs Observed by an Ultra-Fast (10V/ns) on-Wafer Methodology, IEEE Journal of Emerging and Selected Topics in Power Electronics, January 2021, Institute of Electrical & Electronics Engineers (IEEE),
DOI: 10.1109/jestpe.2021.3077127.
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