Analysis of 14nm technology node In0.53Ga0.47As nFinFET integrated with In0.52Al0.48As cap layer for high-speed circuits

Jay Pathak, Anand Darji
  • International Journal of Electronics, March 2019, Taylor & Francis
  • DOI: 10.1080/00207217.2019.1600738

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http://dx.doi.org/10.1080/00207217.2019.1600738

The following have contributed to this page: Dr Anand Dhirajlal Darji