What is it about?
Solution processing of high-performance, high-Ga-content IGZO thin-film transistors (TFTs)—or compositionally simpler and, hence, technologically more desirable indium gallium oxide (IGO) TFTs—remains challenging and an impediment to manufacturing low-temperature, solution-processed metal oxide electronics. By incorporation PVA in IGO precursor, tremendous performance enhancement is achieved, making the commercialization progess of solution-processed flexible oxide semiconductor one step further.
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Why is it important?
A new way to increase performance of oxide semiconductor; and an approach combining experimental and theoretical analysis to probe H position in oxides.
Read the Original
This page is a summary of: Experimental and theoretical evidence for hydrogen doping in polymer solution-processed indium gallium oxide, Proceedings of the National Academy of Sciences, July 2020, Proceedings of the National Academy of Sciences, DOI: 10.1073/pnas.2007897117.
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