What is it about?

Solution processing of high-performance, high-Ga-content IGZO thin-film transistors (TFTs)—or compositionally simpler and, hence, technologically more desirable indium gallium oxide (IGO) TFTs—remains challenging and an impediment to manufacturing low-temperature, solution-processed metal oxide electronics. By incorporation PVA in IGO precursor, tremendous performance enhancement is achieved, making the commercialization progess of solution-processed flexible oxide semiconductor one step further.

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Why is it important?

A new way to increase performance of oxide semiconductor; and an approach combining experimental and theoretical analysis to probe H position in oxides.


Ga rich oxide semiconductor always shows the inferior performance when fabricated with low temperature (< 300 C) solution process. This paper provides a simple way to obtain high mobility IGO via adding optimal content of polyvinyl alcohol in IGO aqueous solution. Moreover, based on systematic transistor performance analysis, material characteristics, and theoretical simulations, it is concluded that hydrogen doping and gallium coordination change is the key. This result not only offers a route to high-performance, ultra-stable metal oxide semiconductor electronics with simple binary compositions but also provides powerful tools to probe H locations in amorphous metal oxides via a combination of experimental and theoretical approaches.

Wei Huang
Northwestern University

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This page is a summary of: Experimental and theoretical evidence for hydrogen doping in polymer solution-processed indium gallium oxide, Proceedings of the National Academy of Sciences, July 2020, Proceedings of the National Academy of Sciences, DOI: 10.1073/pnas.2007897117.
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