What is it about?
This work investigates electrically active point defects in the wide bandgap semiconductor, Gallium Oxide, which is an exciting material for power electronics and ultraviolet optoelectronic devices.
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Why is it important?
Point defects are important to characterize, identify and label as they can have serious implications on device performance, reliability and control. This work identifies Iron as a contaminant that can decrease a device's conductivity in addition to a surface-related defect that arises from chemical-mechanical polishing. These considerations are important when making high-quality devices.
Perspectives
This work highlights the importance of having very pure source powders when growing bulk single crystal semiconductors. In this work, Gallium Oxide is grown using the highly-pure optical floating zone method, yet the material still contains significant contamination that can hinder the performance of devices.
Christopher Dawe
University of Manchester
Read the Original
This page is a summary of: Electrically active defects in Ta-doped β-Ga2O3 grown using the optical floating zone method, APL Materials, April 2025, American Institute of Physics,
DOI: 10.1063/5.0261495.
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