All Stories

  1. On the nature of deep-level defects in β -Ga2O3 epilayers: The impact of isochronal rapid thermal annealing

    Article • Journal of Applied Physics, March 2026, American Institute of Physics

    Christopher Dawe

  2. Deep-level point defects at Ga sites in dilute AlxGa1− xN alloys

    Article • Applied Physics Letters, September 2025, American Institute of Physics

    Christopher Dawe

  3. Characterization of deep-level defects in OFZ grown Nb-doped β-Ga2O3 single crystals

    Article • APL Materials, May 2025, American Institute of Physics

    Christopher Dawe

  4. Point Defects in Gallium Oxide Single Crystals

    Article • APL Materials, April 2025, American Institute of Physics

    Christopher Dawe

  5. Point defects in wide bandgap semiconductor crystals: β-Ga2O3

    Article • Journal of Applied Physics, July 2024, American Institute of Physics

    Christopher Dawe

  6. FeGa (0/−) acceptor level as a reference energy level in dilute AlxGa1−xN

    Article • Applied Physics Letters, June 2024, American Institute of Physics

    Christopher Dawe

  7. The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers

    Article • Journal of Applied Physics, May 2024, American Institute of Physics

    Christopher Dawe