Wet-based digital etching on GaN and AlGaN

What is it about?

A precise and nanometer-level control of etching on III-Nitrides is critical for many application and device development, especially vertical devices. A wet-chemical type digital etching on III-Nitride seminconductors, which can shrink and sharpen vertical nanostructures without any vacuum and plasma systems, is demonstrated in this paper.

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Why is it important?

A fully wet-chemical digital etching approach on III-Nitrides can provide an alternative (and potentially better) way to precisely control the etch on III-Nitrides without complex or expensive vacuum / plasma systems.