All Stories

  1. Anode-Integrated GaN Field Emitter Arrays for Compact Vacuum Transistors

    Article • IEEE Electron Device Letters, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Pao-Chuan Shih

  2. GaN Field Emitter Arrays with JA of 10 A/cm2 at VGE = 50 V for Power Applications

    Article • December 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Pao-Chuan Shih

  3. The impact of semiconductor surface states on vacuum field emission

    Article • Journal of Applied Physics, October 2022, American Institute of Physics

    Pao-Chuan Shih

  4. Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays

    Article • IEEE Electron Device Letters, August 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Pao-Chuan Shih

  5. Wet-based digital etching on GaN and AlGaN

    Article • Frontiers in Human Neuroscience, January 2022, American Institute of Physics

    Pao-Chuan Shih

  6. High Band-to-Band Tunneling Current in InAs/GaSb Heterojunction Esaki Diodes by the Enhancement of Electric Fields Close to the Mesa Sidewalls

    Article • IEEE Transactions on Electron Devices, August 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Pao-Chuan Shih

  7. Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process

    Article • IEEE Electron Device Letters, March 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Pao-Chuan Shih

  8. GaN Nanowire Field Emitters with a Self-Aligned Gate Process

    Article • June 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Pao-Chuan Shih

  9. A U-Gate InGaAs/GaAsSb Heterojunction TFET of Tunneling Normal to the Gate With Separate Control Over ON- and OFF-State Current

    Article • IEEE Electron Device Letters, December 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Pao-Chuan Shih

  10. A novel vertical tunnel FET of band-to-band tunneling aligned with gate electric field with averaged SS of 28 mV/decade

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Pao-Chuan Shih