What is it about?
Negative differential resistance can be utilized to create terahertz sources. We investigate the possibility of creating a nitride based RTD which is capable of providing the massive current densities which will be required to operate at terahertz frequencies and still produce a large output power. Additionally, due to the prohibitively high cost of bulk GaN substrates, we also show that templated sapphire substrates are a much more cost effective route forward.
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This page is a summary of: 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template, Applied Physics Letters, May 2019, American Institute of Physics,
DOI: 10.1063/1.5095056.
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