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  1. Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures

    Article • APL Materials, November 2021, American Institute of Physics

    Dr. Tyler A Growden

  2. Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit Design

    Article • June 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Tyler A Growden

  3. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

    Article • June 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Tyler A Growden

  4. Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

    Article • AIP Advances, May 2020, American Institute of Physics

    Dr. Tyler A Growden

  5. Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, May 2020, American Vacuum Society

    Dr. Tyler A Growden

  6. Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes

    Article • Applied Physics Letters, March 2020, American Institute of Physics

    Dr. Tyler A Growden

  7. Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models

    Article • IEEE Transactions on Electron Devices, January 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Tyler A Growden

  8. Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications

    Article • phys stat sol (a), November 2019, Wiley

    Dr. Tyler A Growden

  9. New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs

    Article • June 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Tyler A Growden

  10. Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes

    Article • June 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Tyler A Growden

  11. Record peak tunneling current density in nitride based resonant tunneling diodes

    Article • Applied Physics Letters, May 2019, American Institute of Physics

    Dr. Tyler A Growden

  12. 431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

    Article • Applied Physics Letters, January 2018, American Institute of Physics

    Dr. Tyler A Growden

  13. Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures

    Article • Light Science & Applications, October 2017, Springer Science + Business Media

    Dr. Tyler A Growden

  14. AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, March 2017, American Vacuum Society

    Dr. Tyler A Growden

  15. A Nonlinear Circuit Simulation of Switching Process in Resonant-Tunneling Diodes

    Article • IEEE Transactions on Electron Devices, December 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Tyler A Growden

  16. Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

    Article • Applied Physics Letters, August 2016, American Institute of Physics

    Dr. Tyler A Growden

  17. Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

    Article • Applied Physics Letters, October 2015, American Institute of Physics

    Dr. Tyler A Growden

  18. Methods for attaining high interband tunneling current in III-Nitrides

    Article • June 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Tyler A Growden

  19. Selective deuteron production using target normal sheath acceleration

    Article • Physics of Plasmas, March 2012, American Institute of Physics

    Dr. Tyler A Growden

  20. Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition

    Article • IEEE Transactions on Electron Devices, March 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Tyler A Growden