What is it about?
Silicon is widely used as n-type dopant in AlN. This paper describes in details the diffusion behavior of silicon in high quality AlN, providing insights into the defects/defect-complexes involved in the diffusion process. The diffusion experiments are conducted through isochronal and isothermal annealing at high temperature.
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Why is it important?
Our study provides fundamental parameters on silicon diffusion in AlN. This is key to understand and control doping and compensation in AlN, potentially opening new perspectives for n-type doping using Si diffusion. Furthermore, the analysis carried out in this study to obtain information about the atomic mechanism mediating the diffusion of the dopant atoms in AlN can be applied to other III-V compound semiconductors.
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This page is a summary of: Silicon diffusion in AlN, Journal of Applied Physics, September 2023, American Institute of Physics,
DOI: 10.1063/5.0159641.
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