What is it about?
Sophisticated and highly customizable semiconductor materials could enhance the features of electronic devices. Experimental techniques are developed to understand the physics of complex semiconductor alloys by studying its light-emitting properties.
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Why is it important?
We have obtained data from optical spectroscopy experiments on the indirect bandgap of quartenary AlGaAsSb alloys. Time-resolved photoluminescence results show microsecond long carrier lifetimes typical of indirect bandgap semiconductors. From photoluminescence experiments spectral features that reflect the alloy growth could also be determined. These data will advance further bandgap engineering on these alloys.
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This page is a summary of: Recombination processes in MBE grown Al0.85Ga0.15As0.56Sb0.44, AIP Advances, April 2023, American Institute of Physics, DOI: 10.1063/5.0145051.
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