What is it about?
ITO is widely used as electrode material of thin film transistor.We found that the ultra-thin ITO material could be used as the channel material of thin film transistor after annealing at low temperature of 150 degree, and obtained a high mobility of 70 cm2/Vs. The crystallization, surface morphology, chemical bonding state and energy band of the amorphous ITO film after annealing were systematically analyzed, which confirmed the experimental results.
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Why is it important?
our findings expands the research on a high electron concentration ITO material as the active layer and promotes the development of amorphous oxide semiconductors in high mobility and flexible TFTs.
Perspectives
Writing this article has been a great pleasure because the students that I supervised and co-authors have worked well with me.This article also led me to have a deeper understanding of low temperature process with high mobility, and will expand this research field.
Lei Xu
North China University of Water Resources and Electric Power
Read the Original
This page is a summary of: High mobility amorphous InSnO thin film transistors via low-temperature annealing, Applied Physics Letters, January 2023, American Institute of Physics,
DOI: 10.1063/5.0131595.
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