What is it about?
ITO is widely used as electrode material of thin film transistor.We found that the ultra-thin ITO material could be used as the channel material of thin film transistor after annealing at low temperature of 150 degree, and obtained a high mobility of 70 cm2/Vs. The crystallization, surface morphology, chemical bonding state and energy band of the amorphous ITO film after annealing were systematically analyzed, which confirmed the experimental results.
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Why is it important?
our findings expands the research on a high electron concentration ITO material as the active layer and promotes the development of amorphous oxide semiconductors in high mobility and flexible TFTs.
Read the Original
This page is a summary of: High mobility amorphous InSnO thin film transistors via low-temperature annealing, Applied Physics Letters, January 2023, American Institute of Physics, DOI: 10.1063/5.0131595.
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