What is it about?

ITO is widely used as electrode material of thin film transistor.We found that the ultra-thin ITO material could be used as the channel material of thin film transistor after annealing at low temperature of 150 degree, and obtained a high mobility of 70 cm2/Vs. The crystallization, surface morphology, chemical bonding state and energy band of the amorphous ITO film after annealing were systematically analyzed, which confirmed the experimental results.

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Why is it important?

our findings expands the research on a high electron concentration ITO material as the active layer and promotes the development of amorphous oxide semiconductors in high mobility and flexible TFTs.


Writing this article has been a great pleasure because the students that I supervised and co-authors have worked well with me.This article also led me to have a deeper understanding of low temperature process with high mobility, and will expand this research field.

Lei Xu
North China University of Water Resources and Electric Power

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This page is a summary of: High mobility amorphous InSnO thin film transistors via low-temperature annealing, Applied Physics Letters, January 2023, American Institute of Physics, DOI: 10.1063/5.0131595.
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