What is it about?
The spatial charge distribution and transport characteristics of a semiconductor heterojunction are crucial, as these parameters establish the operating principles of the semiconductor device. In III-nitrides, this charge distribution and transport at the heterojunction changes with the materials integrated. For example, InGaN/GaN led to optoelectronic devices as a result of trapped charges at heterojunction, while AlGaN/GaN led to high mobility electronic devices as a result of two-dimensional electron gas formation at heterojunction. Charge distribution and transport are affected by the band alignment type and band offset values of the materials used. We observed that when incorporating boron into existing III-nitrides, both type-I and type-II band alignments are possible. Within the context of p–d orbital coupling, boron-incorporated heterojunctions band types are discussed.
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Why is it important?
With boron incorporated into III-nitride semiconductors, ternary and quaternary III-nitride alloys with tunable bandgaps and lattice matching options can be formed, enabling more bandgap engineering options to UV optoelectronics and power electronics devices. An important consideration prior to designing any device using boron-incorporated III-nitrides is the type of alignment and offset of the bands. This work is expected to facilitate the design and realization of boron-based III-nitride devices.
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This page is a summary of: An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions, Applied Physics Letters, July 2023, American Institute of Physics,
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