What is it about?
Semiconductor devices working properly under radiation conditions are needed for robots or sensors working for the decommissioning of nuclear facilities, or used in space with long term reliability. We investigate degradation properties of Silicon Carbide Junction Field Effect Transistors (SiC JFETs), which are expected as radiation harder than common Si transistors. Extremely high dose irradiation up to 17 MGy is performed to understand degradation behavior and underlying mechanisms more clearly.
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Why is it important?
Although SiC JFETs have been thought to be radiation hard, their degradation behavior by irradiation and underlying mechanism have not been clearly understood. Due to extremely high dose gamma-rays irradiation up to 17 MGy, we find that 1) hysteresis in electrical characteristics, and 2) it is attributed to capture/release of carries at crystal defects generated by displacement damage by irradiation. The knowledge would be helpful for development of radiation harder SiC devices with higher reliability.
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This page is a summary of: Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors, Journal of Applied Physics, June 2022, American Institute of Physics, DOI: 10.1063/5.0095841.
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