What is it about?

Spin Transfer Torque Magnetic memory is conceived as an alternative to the incumbent charge-based memories. However, to make its speed equivalent to the current high-speed memories, the applied current has to be quite high, resulting in a larger footprint and higher power dissipation. By incorporating Antiferromagnet based spin torque oscillator, we have shown that the switching speed could be improved without increasing the applied current.

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Why is it important?

There is a lot of interest among the researchers about the spin-transfer torque memory due to its non-volatility, almost zero static power consumption, and the possibility of the back end of the line integration. However, the operation power is quite high when operating at a fast speed. This work demonstrates a possible method to reduce the operating power of the memory without compromising the performance of it.

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This page is a summary of: High-speed STT MRAM incorporating antiferromagnetic layer, Applied Physics Letters, January 2019, American Institute of Physics, DOI: 10.1063/1.5078525.
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