All Stories

  1. Structural, optical, and electrical characterization and performance comparison of AlGaN/GaN HEMT structures with different buffer layers

    Article • Vacuum, January 2024, Elsevier

    Sudhiranjan Tripathy

  2. Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates

    Article • Applied Physics Letters, October 2023, American Institute of Physics

    Sudhiranjan Tripathy, Zainul Aabdin

  3. Ultrasensitive Real-Time Detection of Pb2+ Ions Using g-C3N4 Nanosheets

    Article • IEEE Sensors Journal, May 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  4. AlGaN/GaN HEMT Based pH Detection Using Atomic Layer Deposition of Al2O3 as Sensing Membrane and Passivation

    Article • IEEE Transactions on Nanotechnology, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  5. Patterning at the Resolution Limit of Commercial Electron Beam Lithography

    Article • Nano Letters, September 2022, American Chemical Society (ACS)

    Sudhiranjan Tripathy

  6. MoS2 functionalized AlGaN/GaN transistor based room temperature NO2 gas sensor

    Article • Sensors and Actuators A Physical, August 2022, Elsevier

    Sudhiranjan Tripathy

  7. 1T and 2H heterophase MoS2 for enhanced sensitivity of GaN transistor-based mercury ions sensor

    Article • Nanotechnology, April 2022, Institute of Physics Publishing

    Sudhiranjan Tripathy

  8. Recent progress on group III nitride nanostructure-based gas sensors

    Article • Journal of Materials Chemistry C, January 2022, Royal Society of Chemistry

    Sudhiranjan Tripathy

  9. Angstrom-Scale Transparent Overcoats: Interfacial Nitrogen-Driven Atomic Intermingling Promotes Lubricity and Surface Protection of Ultrathin Carbon

    Article • Nano Letters, October 2021, American Chemical Society (ACS)

    Sudhiranjan Tripathy

  10. Development of semiconductor based heavy metal ion sensors for water analysis: A review

    Article • Sensors and Actuators A Physical, October 2021, Elsevier

    Sudhiranjan Tripathy

  11. Fabrication and Modeling-Based Performance Analysis of Circular GaN MOSHEMT-Based Electrochemical Sensors

    Article • IEEE Sensors Journal, February 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  12. Thermoelectric Properties of Substoichiometric Electron Beam Patterned Bismuth Sulfide

    Article • ACS Applied Materials & Interfaces, July 2020, American Chemical Society (ACS)

    Sudhiranjan Tripathy

  13. Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring

    Article • Sensors and Actuators B Chemical, April 2020, Elsevier

    Sudhiranjan Tripathy

  14. Room-Temperature Patterning of Nanoscale MoS2 under an Electron Beam

    Article • ACS Applied Materials & Interfaces, March 2020, American Chemical Society (ACS)

    Professor Suresh Valiyaveettil, Sudhiranjan Tripathy

  15. Photodegradation of 4-nitrophenol over B-doped TiO2 nanostructure: effect of dopant concentration, kinetics, and mechanism

    Article • Environmental Science and Pollution Research, January 2020, Springer Science + Business Media

    Sudhiranjan Tripathy

  16. Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors

    Article • physica status solidi (a), January 2020, Wiley

    Sudhiranjan Tripathy

  17. Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with V TH  > 5V and On‐Current > 0.5 A mm −1

    Article • physica status solidi (a), January 2020, Wiley

    Sudhiranjan Tripathy

  18. Ultrasmall Designed Plasmon Resonators by Fused Colloidal Nanopatterning

    Article • ACS Applied Materials & Interfaces, November 2019, American Chemical Society (ACS)

    Sudhiranjan Tripathy

  19. Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high...

    Article • Journal of Applied Physics, July 2019, American Institute of Physics

    Sudhiranjan Tripathy

  20. MPA-GSH Functionalized AlGaN/GaN High-Electron Mobility Transistor-Based Sensor for Cadmium Ion Detection

    Article • IEEE Sensors Journal, April 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  21. Linear and Circular AlGaN/AlN/GaN MOS-HEMT-based pH Sensor on Si Substrate: A Comparative Analysis

    Article • IEEE Sensors Letters, April 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  22. Investigation of Ta2O5 as an Alternative High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math> </inline-formula> Dielectric for InAlN/GaN MOS-HEMT on Si

    Article • IEEE Transactions on Electron Devices, March 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  23. Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using AlxGa1–xN/GaN High Electron Mobility Transistor Structures on Si (111)

    Article • ACS Applied Electronic Materials, February 2019, American Chemical Society (ACS)

    Sudhiranjan Tripathy

  24. Boosting contact sliding and wear protection via atomic intermixing and tailoring of nanoscale interfaces

    Article • Science Advances, January 2019, American Association for the Advancement of Science

    Sudhiranjan Tripathy

  25. Suppression of Ge-based defects and auto-doping of p-type epitaxial GaAs by employing Al0.3Ga0.7As bi-layer buffer

    Article • Journal of Alloys and Compounds, October 2018, Elsevier

    Sudhiranjan Tripathy

  26. Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates

    Article • IEEE Transactions on Electron Devices, September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  27. Growth and in-plane undulations of GaAs/Ge superlattices on [001]-oriented Ge and GaAs substrates: formation of regular 3D island-in-network nanostructures

    Article • Journal of Materials Chemistry C, January 2018, Royal Society of Chemistry

    Sudhiranjan Tripathy

  28. Interface traps at Al 2 O 3 /InAlN/GaN MOS-HEMT -on- 200 mm Si

    Article • Solid-State Electronics, November 2017, Elsevier

    Sudhiranjan Tripathy

  29. Direct Patterning of Zinc Sulfide on a Sub-10 Nanometer Scale via Electron Beam Lithography

    Article • ACS Nano, September 2017, American Chemical Society (ACS)

    Professor Suresh Valiyaveettil, Sudhiranjan Tripathy

  30. Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

    Article • AIP Advances, August 2017, American Institute of Physics

    Sudhiranjan Tripathy

  31. Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells

    Article • Scientific Reports, May 2017, Nature

    Dr Sudip Kumar Batabyal, Sudhiranjan Tripathy

  32. Direct observation of thickness and foreign interlayer driven abrupt structural transformation in ultrathin carbon and hybrid silicon nitride/carbon films

    Article • Carbon, May 2017, Elsevier

    Sudhiranjan Tripathy

  33. Superior wear resistance and low friction in hybrid ultrathin silicon nitride/carbon films: synergy of the interfacial chemistry and carbon microstructure

    Article • Nanoscale, January 2017, Royal Society of Chemistry

    Sudhiranjan Tripathy

  34. Origin and Quenching of Novel ultraviolet and blue emission in NdGaO3: Concept of Super-Hydrogenic Dopants

    Article • Scientific Reports, November 2016, Nature

    Sudhiranjan Tripathy

  35. Defect Analysis And Performance Evaluation Of P-type Epitaxial GaAs Layer On Ge Substrate For GaAs/Ge Based Advanced Device

    Article • Advanced Materials Letters, July 2016, International Association of Advanced Materials

    Sudhiranjan Tripathy

  36. Interface Engineering and Controlling the Friction and Wear of Ultrathin Carbon Films: High sp3 Versus High sp2 Carbons

    Article • Advanced Functional Materials, January 2016, Wiley

    Sudhiranjan Tripathy

  37. Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1−x as potential gate dielectrics for GaN/AlxGa1−xN/GaN high electron mobility transistors

    Article • Journal of Applied Physics, January 2016, American Institute of Physics

    Sudhiranjan Tripathy

  38. High-resolution X-ray diffraction and micro-Raman scattering studies of Ge(:Ga) thin films grown on GaAs (001) substrates by MOCVD

    Article • RSC Advances, January 2016, Royal Society of Chemistry

    Sudhiranjan Tripathy

  39. Sputter grown sub-micrometer thick Cu2ZnSnS4 thin film for photovoltaic device application

    Article • Materials Letters, December 2015, Elsevier

    Dr Sudip Kumar Batabyal, Sudhiranjan Tripathy

  40. Al$x$ Ga1–xN/GaN MISHEMTs With a Common Gold-Free Metal-Stack for Source/Drain/Gate

    Article • IEEE Electron Device Letters, December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  41. Annealing Pressure and Ambient Dependent RuOxSchottky Contacts on InAlN/AlN/GaN-on-Si(111) Heterostructure

    Article • ECS Journal of Solid State Science and Technology, November 2015, The Electrochemical Society

    Sudhiranjan Tripathy

  42. Influence of PECVD deposited SiNxpassivation layer thickness on In0.18Al0.82N/GaN/Si HEMT

    Article • Journal of Physics D Applied Physics, August 2015, Institute of Physics Publishing

    Sudhiranjan Tripathy

  43. Ultrathin Carbon with Interspersed Graphene/Fullerene-like Nanostructures: A Durable Protective Overcoat for High Density Magnetic Storage

    Article • Scientific Reports, June 2015, Springer Science + Business Media

    Sudhiranjan Tripathy

  44. Effect of Carbon Doping and Crystalline Quality on the Vertical Breakdown Characteristics of GaN Layers Grown on 200-mm Silicon Substrates

    Article • Journal of Electronic Materials, May 2015, Springer Science + Business Media

    Sudhiranjan Tripathy

  45. Silicon nitride/tetrahedral amorphous carbon bilayer overcoat for exceptional wear life of functional tape heads

    Article • May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  46. Comment on “Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system” [Appl. Phys. Lett. 105, 232113 (2014)]

    Article • Applied Physics Letters, April 2015, American Institute of Physics

    Sudhiranjan Tripathy

  47. Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal

    Article • Japanese Journal of Applied Physics, March 2015, Japan Society of Applied Physics

    Sudhiranjan Tripathy

  48. Crystallization of Sputter-Deposited Amorphous (FeSi2)1–xAlx Thin Films

    Article • Crystal Growth & Design, March 2015, American Chemical Society (ACS)

    Sudhiranjan Tripathy

  49. Excellent wear life of silicon nitride/tetrahedral amorphous carbon bilayer overcoat on functional tape heads

    Article • Applied Physics Letters, March 2015, American Institute of Physics

    Sudhiranjan Tripathy

  50. Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

    Article • Applied Physics Letters, February 2015, American Institute of Physics

    Sudhiranjan Tripathy

  51. High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate

    Article • IEEE Electron Device Letters, October 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  52. Medium energy Ar+-ion induced ripple formation: Role of ion energy in pattern formation

    Article • Applied Surface Science, October 2014, Elsevier

    Sudhiranjan Tripathy

  53. Probing channel temperature profiles in AlxGa1−xN/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy

    Article • Applied Physics Letters, August 2014, American Institute of Physics

    Sudhiranjan Tripathy

  54. A disc-like Mo-metal cluster compound, Co2Mo3O8, as a high capacity anode for lithium ion batteries

    Article • RSC Advances, July 2014, Royal Society of Chemistry

    Sudhiranjan Tripathy

  55. Enhanced Tribological, Corrosion, and Microstructural Properties of an Ultrathin (<2 nm) Silicon Nitride/Carbon Bilayer Overcoat for High Density Magnetic Storage

    Article • ACS Applied Materials & Interfaces, June 2014, American Chemical Society (ACS)

    Sudhiranjan Tripathy

  56. Bi-level surface modification of hard disk media by carbon using filtered cathodic vacuum arc: Reduced overcoat thickness without reduced corrosion performance

    Article • Diamond and Related Materials, April 2014, Elsevier

    Sudhiranjan Tripathy

  57. Silicon Nitride Thickness Dependent Electrical Properties of InAlN/GaN Heterostructures

    Article • ECS Transactions, March 2014, The Electrochemical Society

    Sudhiranjan Tripathy

  58. Thermally robust RuOx Schottky diodes and HEMTs on III‐nitrides

    Article • physica status solidi c, February 2014, Wiley

    Sudhiranjan Tripathy

  59. Influence of RuOx Gate Thermal Annealing on Electrical Characteristics of AlxGa1-xN/GaN HEMTs on 200-mm Silicon

    Article • ECS Solid State Letters, December 2013, The Electrochemical Society

    Sudhiranjan Tripathy

  60. Effect of Ge Diffusion on AlxGa1-xN/GaN High Electron Mobility Transistors on a Thin Silicon-On-Insulator

    Article • ECS Solid State Letters, October 2013, The Electrochemical Society

    Sudhiranjan Tripathy

  61. Gold-Free InAlN/GaN Schottky Gate HEMT On Si (111) Substrate with ZrO2 Passivation

    Article • ECS Transactions, May 2013, The Electrochemical Society

    Sudhiranjan Tripathy

  62. Plasphonics : local hybridization of plasmons and phonons

    Article • Optics Express, February 2013, Optical Society of America (OSA)

    Sudhiranjan Tripathy

  63. Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate

    Article • Journal of Applied Physics, January 2013, American Institute of Physics

    Sudhiranjan Tripathy

  64. Effect of Gd dopant concentration on the defect engineering in ceria nanostructures

    Article • Materials Research Bulletin, December 2012, Elsevier

    Dr Sakar Mohan, Sudhiranjan Tripathy

  65. GaN-on-Silicon integration technology

    Article • November 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  66. Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

    Article • Japanese Journal of Applied Physics, October 2012, Institute of Physics Publishing

    Sudhiranjan Tripathy

  67. Influence of catalytic gold and silver metal nanoparticles on structural, optical, and vibrational properties of silicon nanowires synthesized by metal-assisted chemical etching

    Article • Journal of Applied Physics, October 2012, American Institute of Physics

    Sudhiranjan Tripathy

  68. AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

    Article • Applied Physics Letters, August 2012, American Institute of Physics

    Sudhiranjan Tripathy

  69. Study of electromagnetic enhancement for surface enhanced Raman spectroscopy of SiC graphene

    Article • Applied Physics Letters, May 2012, American Institute of Physics

    Sudhiranjan Tripathy

  70. Synthesis and characterization of fluorescent dyes-magnetic nanoparticles for bioimaging applications

    Article • February 2012, SPIE

    Sudhiranjan Tripathy

  71. On the surface magnetism induced atypical ferromagnetic behavior of cerium oxide (CeO2) nanoparticles

    Article • January 2012, American Institute of Physics

    Dr Sakar Mohan, Sudhiranjan Tripathy

  72. AlxGa1−xN/GaN heterostructures on a thin silicon-on-insulator substrate for metal–semiconductor–metal photodetectors

    Article • Journal of Physics D Applied Physics, August 2011, Institute of Physics Publishing

    Sudhiranjan Tripathy

  73. Metal‐nanoparticle‐coating‐induced enhancement and weakening of resonant Raman scattering in ZnO: effect of surface electric field

    Article • Journal of Raman Spectroscopy, July 2011, Wiley

    Sudhiranjan Tripathy

  74. Damping of the Acoustic Vibrations of Individual Gold Nanoparticles

    Article • Nano Letters, June 2011, American Chemical Society (ACS)

    Sudhiranjan Tripathy

  75. A new route to graphene layers by selective laser ablation

    Article • AIP Advances, April 2011, American Institute of Physics

    Sudhiranjan Tripathy

  76. Reduced Contact Resistance and Improved Surface Morphology of Ohmic Contacts on GaN Employing KrF Laser Irradiation

    Article • Japanese Journal of Applied Physics, April 2011, Institute of Physics Publishing

    Sudhiranjan Tripathy

  77. Plasmonic properties of gold ring-disk nano-resonators: fine shape details matter

    Article • Optics Express, March 2011, Optical Society of America (OSA)

    Sudhiranjan Tripathy

  78. Effect of pre-treatment of the substrate surface by energetic C+ ion bombardment on structure and nano-tribological characteristics of ultra-thin tetrahedral amorphous carbon (ta-C) protective coatings

    Article • Journal of Physics D Applied Physics, March 2011, Institute of Physics Publishing

    Sudhiranjan Tripathy

  79. Field Effects in Plasmonic Photocatalyst by Precise SiO2 Thickness Control Using Atomic Layer Deposition

    Article • ACS Catalysis, February 2011, American Chemical Society (ACS)

    Sudhiranjan Tripathy

  80. Acousto-Plasmonic and Surface-Enhanced Raman Scattering Properties of Coupled Gold Nanospheres/Nanodisk Trimers

    Article • Nano Letters, February 2011, American Chemical Society (ACS)

    Sudhiranjan Tripathy

  81. Laterally-current-injected light-emitting diodes based on nanocrystalline-Si/SiO_2 superlattice

    Article • Optics Express, January 2011, Optical Society of America (OSA)

    Sudhiranjan Tripathy

  82. Temperature rise in InGaN/GaN vertical light emitting diode on copper transferred from silicon probed by Raman scattering

    Article • Journal of Applied Physics, December 2010, American Institute of Physics

    Sudhiranjan Tripathy

  83. Hydrogen-related n-type conductivity in hydrothermally grown epitaxial ZnO films

    Article • Journal of Applied Physics, October 2010, American Institute of Physics

    Sudhiranjan Tripathy

  84. Dual wavelength sensing based on interacting gold nanodisk trimers

    Article • Nanotechnology, July 2010, Institute of Physics Publishing

    Sudhiranjan Tripathy

  85. Interference lithographically defined and catalytically etched, large-area silicon nanocones from nanowires

    Article • Nanotechnology, April 2010, Institute of Physics Publishing

    Sudhiranjan Tripathy

  86. Emission characteristics of ZnO nanorods on nanosilicon-on-insulator: competition between exciton–phonon coupling and surface resonance effect

    Article • Journal of Physics D Applied Physics, March 2010, Institute of Physics Publishing

    Sudhiranjan Tripathy

  87. Optical Properties of ZnO Nanorods and Hybrid Structures Grown on p-type GaN/Sapphire and Silicon-on-Insulator Substrates

    Article • Science of Advanced Materials, March 2010, American Scientific Publishers

    Sudhiranjan Tripathy

  88. Graphitically encapsulated cobalt nanocrystal assemblies

    Article • Chemical Communications, January 2010, Royal Society of Chemistry

    Sudhiranjan Tripathy

  89. Light emission from tensile-strained n-type epitaxial Ge thin films on Si by ultrahigh vacuum chemical vapor deposition

    Article • January 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  90. Low Temperature Metal Induced Lateral Crystallization of Ge Using Germanide Forming Metals

    Article • Journal of The Electrochemical Society, January 2010, The Electrochemical Society

    Sudhiranjan Tripathy

  91. Luminescence Properties of Photonic Crystal InGaN/GaN Light Emitting Layers on Silicon-on-Insulator

    Article • Electrochemical and Solid-State Letters, January 2010, The Electrochemical Society

    Sudhiranjan Tripathy

  92. Structural and Electrical Characterization of Al[sub x]Ga[sub 1−x]N/GaN Interfaces for UV Photodetectors

    Article • Electrochemical and Solid-State Letters, January 2010, The Electrochemical Society

    Sudhiranjan Tripathy

  93. Effect of indium content on performance and reliability of InGaN/GaN light-emitting diodes

    Article • Journal of Applied Physics, November 2009, American Institute of Physics

    Sudhiranjan Tripathy

  94. Formation of nanodots on oblique ion sputtered InP surfaces

    Article • Applied Surface Science, October 2009, Elsevier

    Sudhiranjan Tripathy

  95. Optical investigations of multi-dimensional ZnO hybrid structures

    Article • Thin Solid Films, July 2009, Elsevier

    Sudhiranjan Tripathy

  96. GaN‐based deep green light emitting diodes on silicon‐on‐insulator substrates

    Article • physica status solidi c, May 2009, Wiley

    Sudhiranjan Tripathy

  97. Threading dislocations annihilation in regrown GaN film on nanoporous GaN template

    Article • physica status solidi c, May 2009, Wiley

    Sudhiranjan Tripathy

  98. Carbothermal synthesis, spectral and magnetic characterization and Li-cyclability of the Mo-cluster compounds, LiYMo3O8 and Mn2Mo3O8

    Article • Electrochimica Acta, April 2009, Elsevier

    Sudhiranjan Tripathy

  99. Omega-Gate p-MOSFET With Nanowirelike SiGe/Si Core/Shell Channel

    Article • IEEE Electron Device Letters, April 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  100. Surface optical phonon and A1(LO) in ZnO submicron crystals probed by Raman scattering: Effects of morphology and dielectric coating

    Article • Journal of Applied Physics, March 2009, American Institute of Physics

    Sudhiranjan Tripathy

  101. Exciton recombination in ZnO nanorods grown on GaN/sapphire template

    Article • Applied Physics Letters, January 2009, American Institute of Physics

    Sudhiranjan Tripathy

  102. Germanium-Rich SiGe Nanowires Formed Through Oxidation of Patterned SiGe FINs on Insulator

    Article • Journal of Electronic Materials, January 2009, Springer Science + Business Media

    Sudhiranjan Tripathy

  103. Raman-active Fröhlich optical phonon mode in arsenic implanted ZnO

    Article • Applied Physics Letters, January 2009, American Institute of Physics

    Sudhiranjan Tripathy

  104. Effect of substrate temperature on spontaneous GaN nanowire growth and optoelectronic properties

    Article • Physica E Low-dimensional Systems and Nanostructures, January 2009, Elsevier

    Sudhiranjan Tripathy

  105. Palladium-Induced Lateral Crystallization of Amorphous-Germanium Thin Film on Insulating Substrate

    Article • Electrochemical and Solid-State Letters, January 2009, The Electrochemical Society

    Sudhiranjan Tripathy

  106. Comparative luminescence properties of ZnO nanorods grown on various substrates by low-temperature metalorganic chemical vapour deposition

    Article • Journal of Crystal Growth, December 2008, Elsevier

    Sudhiranjan Tripathy

  107. Low temperature poly-germanium growth process on insulating substrate using palladium-induced lateral crystallization

    Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  108. Hydrothermal epitaxy of ZnO:Co diluted magnetic semiconducting single crystalline films

    Article • Applied Physics Letters, September 2008, American Institute of Physics

    Sudhiranjan Tripathy

  109. GaN-based microdisk light emitting diodes on (111)-oriented nanosilicon-on-insulator templates

    Article • Journal of Applied Physics, September 2008, American Institute of Physics

    Sudhiranjan Tripathy

  110. Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs

    Article • Nanotechnology, August 2008, Institute of Physics Publishing

    Sudhiranjan Tripathy

  111. Defect characterization of InSb1−xNxgrown using radio frequency nitrogen plasma-assisted molecular beam epitaxy

    Article • Journal of Physics D Applied Physics, July 2008, Institute of Physics Publishing

    Sudhiranjan Tripathy

  112. A new source/drain germanium-enrichment process comprising Ge deposition and laser-induced local melting and recrystallization for P-FET performance enhancement

    Article • June 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  113. Structural and optical properties of ZnO nanorods grown by metal organic chemical vapor deposition

    Article • Journal of Crystal Growth, June 2008, Elsevier

    Sudhiranjan Tripathy

  114. GaN and ZnO freestanding micromechanical structures on silicon‐on‐insulator substrates

    Article • physica status solidi (a), May 2008, Wiley

    Sudhiranjan Tripathy

  115. Luminescence and vibrational properties of erbium‐implanted nanoporous GaN

    Article • physica status solidi c, May 2008, Wiley

    Sudhiranjan Tripathy

  116. Concept of Strain-Transfer-Layer and Integration with Graded Silicon–Germanium Source/Drain Stressors for p-Type Field Effect Transistor Performance Enhancement

    Article • Japanese Journal of Applied Physics, April 2008, Institute of Physics Publishing

    Sudhiranjan Tripathy

  117. Strain Relaxed High Quality Silicon–Germanium-on-Insulator Substrates Formed by Pulsed Laser Irradiation Technology

    Article • Japanese Journal of Applied Physics, April 2008, Institute of Physics Publishing

    Sudhiranjan Tripathy

  118. Fabrication of Thick Germanium-on-Insulator (GeOI) Substrates

    Article • Journal of Electronic Materials, April 2008, Springer Science + Business Media

    Sudhiranjan Tripathy

  119. Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates

    Article • Journal of Physics Condensed Matter, February 2008, Institute of Physics Publishing

    Sudhiranjan Tripathy

  120. Influence of Buffer Layer on Structural and Optical Properties of ZnO Nanorods on Glass Substrates

    Article • Electrochemical and Solid-State Letters, January 2008, The Electrochemical Society

    Sudhiranjan Tripathy

  121. Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing

    Article • Applied Physics Letters, November 2007, American Institute of Physics

    Sudhiranjan Tripathy

  122. Effect of carrier density on the surface morphology and optical properties of nanoporous GaN prepared by UV assisted electrochemical etching

    Article • Applied Physics Letters, August 2007, American Institute of Physics

    Sudhiranjan Tripathy

  123. Characteristics of threading dislocations in ZnO grown on facet-controlled epitaxial overgrown GaN templates

    Article • Journal of Physics Condensed Matter, August 2007, Institute of Physics Publishing

    Sudhiranjan Tripathy

  124. Response to “Comment on ‘Ultrathin low-temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition’” [Appl. Phys. Lett. 90, 092108 (2007)]

    Article • Applied Physics Letters, July 2007, American Institute of Physics

    Sudhiranjan Tripathy

  125. Fabrication of thick SiGe on insulator (Si0.2Ge0.8OI) by condensation of SiGe∕Si superlattice grown on silicon on insulator

    Article • Applied Physics Letters, May 2007, American Institute of Physics

    Sudhiranjan Tripathy

  126. Micro-Raman probing of residual stress in freestanding GaN-based micromechanical structures fabricated by a dry release technique

    Article • Journal of Applied Physics, March 2007, American Institute of Physics

    Sudhiranjan Tripathy

  127. Morphological and micro-Raman investigations on Ar+-ion irradiated nanostructured GaAs surface

    Article • Applied Surface Science, March 2007, Elsevier

    Sudhiranjan Tripathy

  128. Nanoheteroepitaxy of GaN on a nanopore array of Si(111) surface

    Article • Thin Solid Films, March 2007, Elsevier

    Sudhiranjan Tripathy

  129. Surface micromachined freestanding ZnO microbridge and cantilever structures on Si(111) substrates

    Article • Applied Physics Letters, February 2007, American Institute of Physics

    Sudhiranjan Tripathy

  130. Fabrication of deeply undercut GaN-based microdisk structures on silicon platforms

    Article • Applied Physics Letters, February 2007, American Institute of Physics

    Sudhiranjan Tripathy

  131. Photoluminescence of hydrothermally epitaxied ZnO films

    Article • Electrochimica Acta, February 2007, Elsevier

    Sudhiranjan Tripathy

  132. AlGaN/GaN multiple quantum wells grown on facet-controlled epitaxial lateral overgrown GaN/sapphire templates

    Article • Journal of Physics Condensed Matter, January 2007, Institute of Physics Publishing

    Sudhiranjan Tripathy

  133. InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization

    Article • Journal of Crystal Growth, January 2007, Elsevier

    Sudhiranjan Tripathy

  134. Silicon-Germanium-Tin (SiGeSn) Source and Drain Stressors formed by Sn Implant and Laser Annealing for Strained Silicon-Germanium Channel P-MOSFETs

    Article • January 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  135. Structural Properties of ZnO Grown on GaN∕Sapphire Templates

    Article • Electrochemical and Solid-State Letters, January 2007, The Electrochemical Society

    Sudhiranjan Tripathy

  136. Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si<inf>0.7</inf>Ge<inf>0.3</inf> stress transfer layer and source/drain stressors for performance enhancement

    Article • January 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  137. Absorption and Raman Study for POSS-Oligophenylene Nanohybrid Molecules

    Article • Journal of Nanoscience and Nanotechnology, December 2006, American Scientific Publishers

    Sudhiranjan Tripathy

  138. Comparative study of LiMn2O4 thin film cathode grown at high, medium and low temperatures by pulsed laser deposition

    Article • Journal of Solid State Chemistry, December 2006, Elsevier

    Sudhiranjan Tripathy

  139. Lasing in GaN microdisks pivoted on Si

    Article • Applied Physics Letters, November 2006, American Institute of Physics

    Sudhiranjan Tripathy

  140. Si layer transfer to InP substrate using low-temperature wafer bonding

    Article • Applied Surface Science, November 2006, Elsevier

    Sudhiranjan Tripathy

  141. Luminescence properties of ZnO layers grown on Si-on-insulator substrates

    Article • Applied Physics Letters, October 2006, American Institute of Physics

    Sudhiranjan Tripathy

  142. Characterization of GaN layers grown on silicon-on-insulator substrates

    Article • Applied Surface Science, October 2006, Elsevier

    Sudhiranjan Tripathy

  143. GaN epilayers on nanopatterned GaN/Si(111) templates: Structural and optical characterization

    Article • Applied Surface Science, October 2006, Elsevier

    Sudhiranjan Tripathy

  144. Integration of GaN thin films to SiO2–Si(100) substrates by laser lift-off and wafer fusion method

    Article • Superlattices and Microstructures, October 2006, Elsevier

    Sudhiranjan Tripathy

  145. Raman scattering from nanopatterned silicon surface prepared by low-energy -ion irradiation

    Article • Physica E Low-dimensional Systems and Nanostructures, October 2006, Elsevier

    Sudhiranjan Tripathy

  146. Temperature dependence of Raman spectrum of GaNAs ternary alloys grown by molecular beam epitaxy

    Article • Thin Solid Films, October 2006, Elsevier

    Sudhiranjan Tripathy

  147. Photoluminescence and multiphonon resonant Raman scattering in low-temperature grown ZnO nanostructures

    Article • Applied Physics Letters, August 2006, American Institute of Physics

    Sudhiranjan Tripathy

  148. Nanoscale epitaxial overgrowth process and properties of GaN layers on Si (111) substrates

    Article • Applied Physics Letters, July 2006, American Institute of Physics

    Sudhiranjan Tripathy

  149. 100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach

    Article • July 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  150. Characterizations of porous titania thin films produced by electrochemical etching

    Article • Materials Science and Engineering B, July 2006, Elsevier

    Sudhiranjan Tripathy

  151. Structural properties and dopant-modified bandgap energies of Ba0.5 Sr 0.5 TiO 3 thin films grown on LaAlO 3 substrates

    Article • Journal of Electroceramics, July 2006, Springer Science + Business Media

    Sudhiranjan Tripathy

  152. Realization of freestanding InP membranes on Si by low-temperature wafer bonding and stress analysis using micro-Raman spectroscopy

    Article • Applied Physics Letters, May 2006, American Institute of Physics

    Sudhiranjan Tripathy

  153. Improvement of microstructural and optical properties of GaN layer on sapphire by nanoscale lateral epitaxial overgrowth

    Article • Applied Physics Letters, May 2006, American Institute of Physics

    Sudhiranjan Tripathy

  154. High-Density Arrays of InGaN Nanorings, Nanodots, and Nanoarrows Fabricated by a Template-Assisted Approach

    Article • The Journal of Physical Chemistry B, May 2006, American Chemical Society (ACS)

    Sudhiranjan Tripathy

  155. Optical activation of Eu ions in nanoporous GaN films

    Article • Journal of Applied Physics, May 2006, American Institute of Physics

    Sudhiranjan Tripathy

  156. Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1−x

    Article • Journal of Applied Physics, May 2006, American Institute of Physics

    Sudhiranjan Tripathy

  157. A dual-strained CMOS structure through simultaneous formation of relaxed and compressive strained-SiGe-on-insulator

    Article • IEEE Electron Device Letters, May 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  158. Lateral Epitaxial Overgrowth of ZnO in Water at 90 °C

    Article • Advanced Functional Materials, April 2006, Wiley

    Sudhiranjan Tripathy

  159. Nanoheteroepitaxial lateral overgrowth of GaN on nanoporous Si(111)

    Article • Applied Physics Letters, April 2006, American Institute of Physics

    Sudhiranjan Tripathy

  160. Control and improvement of crystalline cracking from GaN thin films grown on Si by metalorganic chemical vapor deposition

    Article • Thin Solid Films, March 2006, Elsevier

    Sudhiranjan Tripathy

  161. Transition of 3D to 2D growth modes of InAs grown on GaAs

    Article • Applied Surface Science, March 2006, Elsevier

    Sudhiranjan Tripathy

  162. Bandgap engineering in semiconductor quantum dots

    Article • Journal of Crystal Growth, February 2006, Elsevier

    Sudhiranjan Tripathy

  163. Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy

    Article • Journal of Crystal Growth, February 2006, Elsevier

    Sudhiranjan Tripathy

  164. Ordered InP nanostructures fabricated by Ar+-ion irradiation

    Article • Applied Physics Letters, January 2006, American Institute of Physics

    Sudhiranjan Tripathy

  165. Band-gap energies and structural properties of doped Ba0.5Sr0.5TiO3 thin films

    Article • Journal of Applied Physics, January 2006, American Institute of Physics

    Sudhiranjan Tripathy

  166. Fabrication Aspects of Germanium on Insulator from Sputtered Ge on Si-Substrates

    Article • Electrochemical and Solid-State Letters, January 2006, The Electrochemical Society

    Sudhiranjan Tripathy

  167. Full Silicidation of Silicon Gate Electrodes Using Nickel-Terbium Alloy for MOSFET Applications

    Article • Journal of The Electrochemical Society, January 2006, The Electrochemical Society

    Sudhiranjan Tripathy

  168. Influence of Rapid Thermal Annealing on the Luminescence Properties of Nanoporous GaN Films

    Article • Electrochemical and Solid-State Letters, January 2006, The Electrochemical Society

    Sudhiranjan Tripathy

  169. Strained Silicon-Germanium-on-Insulator N-MOSFETs Featuring Lattice Mismatched Source/Drain Stressor and High-Stress Silicon Nitride Liner

    Article • January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Sudhiranjan Tripathy

  170. Influence of composition pulling effect on the two-dimensional electron gas formed at AlyInxGa1−x−yN∕GaN interface

    Article • Journal of Applied Physics, November 2005, American Institute of Physics

    Sudhiranjan Tripathy

  171. Photoluminescence and micro-Raman scattering in ZnO nanoparticles: The influence of acetate adsorption

    Article • Chemical Physics Letters, August 2005, Elsevier

    Sudhiranjan Tripathy

  172. Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates

    Article • Physica E Low-dimensional Systems and Nanostructures, April 2005, Elsevier

    Sudhiranjan Tripathy

  173. Improvement of self-organized InAs quantum dots growth by molecular beam epitaxy

    Article • Journal of Crystal Growth, March 2005, Elsevier

    Sudhiranjan Tripathy

  174. High optical quality GaN nanopillar arrays

    Article • Applied Physics Letters, February 2005, American Institute of Physics

    Sudhiranjan Tripathy

  175. Group-V intermixing in InAs∕InP quantum dots

    Article • Applied Physics Letters, January 2005, American Institute of Physics

    Sudhiranjan Tripathy

  176. The influence of V defects on luminescence properties of AlInGaN quaternary alloys

    Article • Journal of Physics Condensed Matter, January 2005, Institute of Physics Publishing

    Sudhiranjan Tripathy

  177. Optical properties of InAs∕GaAs surface quantum dots

    Article • Applied Physics Letters, January 2005, American Institute of Physics

    Sudhiranjan Tripathy

  178. Annealing-Induced Group V Intermixing in InAs∕InP Quantum Dots Probed by Micro-Raman Spectroscopy

    Article • Electrochemical and Solid-State Letters, January 2005, The Electrochemical Society

    Sudhiranjan Tripathy

  179. Fabrication of Freestanding GaN Micromechanical Structures on Silicon-on-Insulator Substrates

    Article • Electrochemical and Solid-State Letters, January 2005, The Electrochemical Society

    Sudhiranjan Tripathy

  180. Near-field optical characterization of GaN and InxGa1−xN/GaN heterostructures grown on freestanding GaN substrates

    Article • Physica E Low-dimensional Systems and Nanostructures, January 2005, Elsevier

    Sudhiranjan Tripathy

  181. InGaN nano-ring structures for high-efficiency light emitting diodes

    Article • Applied Physics Letters, December 2004, American Institute of Physics

    Sudhiranjan Tripathy

  182. Effects of periodic delta-doping on the properties of GaN:Si films grown on Si (111) substrates

    Article • Applied Physics Letters, December 2004, American Institute of Physics

    Sudhiranjan Tripathy

  183. Influence of Au catalyst on the growth of ZnS nanowires

    Article • Chemical Physics Letters, December 2004, Elsevier

    Sudhiranjan Tripathy

  184. Identification of deep levels in GaN associated with dislocations

    Article • Journal of Physics Condensed Matter, August 2004, Institute of Physics Publishing

    Sudhiranjan Tripathy

  185. Inverted hexagonal pits formation in AlInGaN epilayer

    Article • Journal of Crystal Growth, August 2004, Elsevier

    Sudhiranjan Tripathy

  186. Micro-Raman spectroscopic investigation of NiSi films formed on BF2 +-, B+- and non-implanted (100)Si substrates

    Article • Applied Physics A, August 2004, Springer Science + Business Media

    Sudhiranjan Tripathy

  187. High-quality InAs grown on GaAs substrate with an in situ micro-structured buffer

    Article • Journal of Crystal Growth, July 2004, Elsevier

    Sudhiranjan Tripathy

  188. Optical transitions and interface structure in (GaP)m/(AlP)n modulated period superlattices

    Article • Physica E Low-dimensional Systems and Nanostructures, February 2004, Elsevier

    Sudhiranjan Tripathy

  189. Characterization of graded InGaN/GaN epilayers grown on sapphire

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, January 2004, American Vacuum Society

    Sudhiranjan Tripathy

  190. Probing Ge Segregation in NiSi[sub 1−u]Ge[sub u] Using Micro-Raman Spectroscopy

    Article • Electrochemical and Solid-State Letters, January 2004, The Electrochemical Society

    Sudhiranjan Tripathy

  191. Effects of indium surfactant on the crystalline and optical properties of GaN during initial growth stage

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, September 2003, American Vacuum Society

    Sudhiranjan Tripathy

  192. Strain relaxation in graded InGaN/GaN epilayers grown on sapphire

    Article • Applied Physics Letters, August 2003, American Institute of Physics

    Sudhiranjan Tripathy

  193. Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes

    Article • Journal of Applied Physics, May 2003, American Institute of Physics

    Sudhiranjan Tripathy

  194. Erratum: “Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111)” [J. Appl. Phys. 92, 3503 (2002)]

    Article • Journal of Applied Physics, December 2002, American Institute of Physics

    Sudhiranjan Tripathy

  195. Morphological and structural analyses of plasma-induced damage to n-type GaN

    Article • Journal of Applied Physics, October 2002, American Institute of Physics

    Sudhiranjan Tripathy

  196. Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111)

    Article • Journal of Applied Physics, September 2002, American Institute of Physics

    Sudhiranjan Tripathy

  197. Electronic and vibronic properties of n-type GaN: the influence of etching and annealing

    Article • Journal of Physics Condensed Matter, April 2002, Institute of Physics Publishing

    Sudhiranjan Tripathy

  198. Micro-Raman scattering in laterally epitaxial overgrown GaN

    Article • Journal of Applied Physics, April 2002, American Institute of Physics

    Sudhiranjan Tripathy

  199. Electronic and vibronic properties of Mg-doped GaN: The influence of etching and annealing

    Article • Journal of Applied Physics, March 2002, American Institute of Physics

    Sudhiranjan Tripathy

  200. Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, September 2001, American Vacuum Society

    Sudhiranjan Tripathy

  201. Optical properties of nano-silicon

    Article • Bulletin of Materials Science, June 2001, Springer Science + Business Media

    Sudhiranjan Tripathy

  202. Raman scattering in resonance with yellow luminescence transitions in GaN layers grown on sapphire by molecular beam epitaxy

    Article • Physica B Condensed Matter, February 2000, Elsevier

    Sudhiranjan Tripathy

  203. Optical properties of GaN layers grown on C-, A-, R-, and M-plane sapphire substrates by gas source molecular beam epitaxy

    Article • Journal of Applied Physics, June 1999, American Institute of Physics

    Sudhiranjan Tripathy

  204. Raman spectroscopy of PbS nanocrystalline semiconductors

    Article • December 1998, American Physical Society (APS)

    Sudhiranjan Tripathy