Publication not explained
This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.
If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.
Featured Image
Read the Original
This page is a summary of: Concept of Strain-Transfer-Layer and Integration with Graded Silicon–Germanium Source/Drain Stressors for p-Type Field Effect Transistor Performance Enhancement, Japanese Journal of Applied Physics, April 2008, Institute of Physics Publishing,
DOI: 10.1143/jjap.47.2551.
You can read the full text:
Contributors
The following have contributed to this page