All Stories

  1. Copper facilitated nickel oxy-hydroxide films as efficient synergistic oxygen evolution electrocatalyst
  2. Nanoscale Electrochemical Studies: How Can We Use the Atomic Switch
  3. Nanowire Memristors: Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires (Adv. Electron. Mater. 9/2019)
  4. Ionic Modulation of Electrical Conductivity of ZnO Due to Ambient Moisture
  5. Electrolysis of Water at Atomically Tailored Epitaxial Cobaltite Surfaces
  6. Active Electrode Redox Reactions and Device Behavior in ECM Type Resistive Switching Memories
  7. Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires
  8. Silicon memristors go electric
  9. Resistivity control by the electrochemical removal of dopant atoms from a nanodot
  10. Electrochemically prepared oxides for resistive switching memories
  11. Preface
  12. Phase-change memories (PCM) – Experiments and modelling: general discussion
  13. Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion
  14. Synaptic and neuromorphic functions: general discussion
  15. Valence change ReRAMs (VCM) - Experiments and modelling: general discussion
  16. Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities
  17. Recommended Methods to Study Resistive Switching Devices
  18. Effects of Moisture and Redox Reactions in VCM and ECM Resistive Switching Memories
  19. Spring-Like Pseudoelectroelasticity of Monocrystalline Cu2S Nanowire
  20. Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?
  21. Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules
  22. Electrochemically prepared oxides for resistive switching devices
  23. Degradation Kinetics during Oxygen Electrocatalysis on Perovskite-Based Surfaces in Alkaline Media
  24. Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte Nanodots
  25. Processes and Effects of Oxygen and Moisture in Resistively Switching TaO x and HfO x
  26. Multibit memory operation of metal-oxide bi-layer memristors
  27. Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices
  28. Non-volatile memories: Organic memristors come of age
  29. Electrochemical Tantalum Oxide for Resistive Switching Memories
  30. Ordering and Phase Control in Epitaxial Double-Perovskite Catalysts for the Oxygen Evolution Reaction
  31. Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)
  32. Interfacial Metal–Oxide Interactions in Resistive Switching Memories
  33. Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory
  34. SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO2/Ag based systems
  35. Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride
  36. Oxide Thin Films for Memristive Devices
  37. Ionic conductivity of low yttria-doped cubic zirconium oxide nitride single crystals
  38. Stability and Degradation of Perovskite Electrocatalysts for Oxygen Evolution Reaction
  39. (Invited) Mobile Ions, Transport and Redox Processes in Memristive Devices
  40. Humidity effects on the redox reactions and ionic transport in a Cu/Ta2O5/Pt atomic switch structure
  41. Electrochemical processes and device improvement in conductive bridge RAM cells (Phys. Status Solidi A 2∕2016)
  42. Resistive Switching Mechanisms on TaO x and SrRuO 3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy
  43. Electrochemical Metallization Memories
  44. Physics and Chemistry of Nanoionic Cells
  45. Electrochemistry at the Nanoscale
  46. Nanoscale electrochemistry using dielectric thin films as solid electrolytes
  47. PrxBa1-xCoO3Oxide Electrodes for Oxygen Evolution Reaction in Alkaline Solutions by Chemical Solution Deposition
  48. Electrochemical processes and device improvement in conductive bridge RAM cells
  49. Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
  50. Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOxBased Memristive Devices
  51. Processes and Limitations during Filament Formation and Dissolution in GeS x -based ReRAM Memory Cells
  52. Redox Reactions at Cu,Ag/Ta2O5Interfaces and the Effects of Ta2O5Film Density on the Forming Process in Atomic Switch Structures
  53. Modeling of Quantized Conductance Effects in Electrochemical Metallization Cells
  54. Understanding the conductive channel evolution in Na:WO3−x-based planar devices
  55. Influence of Graphene Interlayers on Electrode-Electrolyte Interfaces in Resistive Random Accesses Memory Cells
  56. Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches
  57. (Keynote) Atomic Scale and Interface Interactions in Redox-Based Resistive Switching Memories
  58. Inside Back Cover: Impact of the Counter-Electrode Material on Redox Processes in Resistive Switching Memories (ChemElectroChem 8/2014)
  59. Physical origins and suppression of Ag dissolution in GeSx-based ECM cells
  60. Impact of the Counter-Electrode Material on Redox Processes in Resistive Switching Memories
  61. Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
  62. Live demonstration: An associative capacitive network based on nanoscale complementary resistive switches
  63. Quantum size effects and non-equilibrium states in nanoscale silicon dioxide based resistive switches
  64. Statistical modeling of electrochemical metallization memory cells
  65. Nanobattery Effect in RRAMs—Implications on Device Stability and Endurance
  66. Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale
  67. Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures
  68. (Invited) The Role of Electrochemical Interfaces in ReRAM Memory Cells
  69. New insights into redox based resistive switches
  70. Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories
  71. Comment on “Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices”
  72. Simulation of polarity independent RESET in electrochemical metallization memory cells
  73. Nanosession: Electrochemical Metallization Memories
  74. Nanobatteries in redox-based resistive switches require extension of memristor theory
  75. Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta2O5 atomic switch
  76. Cation-based resistance change memory
  77. Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories
  78. Switching kinetics of electrochemical metallization memory cells
  79. An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing
  80. Bond nature of active metal ions in SiO2-based electrochemical metallization memory cells
  81. Preparation and characterization of GeSx thin-films for resistive switching memories
  82. Comment onReal-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte- Based ReRAM
  83. Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories
  84. Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory
  85. Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces
  86. Quantum conductance and switching kinetics of AgI-based microcrossbar cells
  87. Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide
  88. Redox processes in silicon dioxide thin films using copper microelectrodes
  89. Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
  90. Capacity based nondestructive readout for complementary resistive switches
  91. Electrochemical metallization memories—fundamentals, applications, prospects
  92. Electrochemical metallization memories—fundamentals, applications, prospects
  93. An EMF cell with a nitrogen solid electrolyte—on the transference of nitrogen ions in yttria-stabilized zirconia
  94. Electrochemical activation of molecular nitrogen at the Ir/YSZ interface
  95. Proton mobility in SiO2 thin films and impact of hydrogen and humidity on the resistive switching effect
  96. A Study of the Kinetics of the Electrochemical Deposition of Ce3+/Ce4+ Oxides
  97. Oxide nitrides: From oxides to solids with mobile nitrogen ions
  98. Thermodynamics, structure and kinetics in the system Ga–O–N
  99. Ionic and electronic conductivity of nitrogen-doped Yttrium-stabilized Zirconium single crystals.
  100. ChemInform Abstract: Defect Chemistry of the Cage Compound, Ca12Al14O33-δ- Understanding the Route from a Solid Electrolyte to a Semiconductor and Electride.
  101. Faradaic currents during electroforming of resistively switching Ag–Ge–Se type electrochemical metallization memory cells
  102. Defect chemistry of the cage compound, Ca12Al14O33−δ—understanding the route from a solid electrolyte to a semiconductor and electride
  103. Electrochemical Reactions in Nanoionics - Towards Future Resistive Switching Memories
  104. Electrocatalysts for bifunctional oxygen/air electrodes
  105. Electrode activation and degradation: Morphology changes of platinum electrodes on YSZ during electrochemical polarisation
  106. Defect Chemistry and Transport Properties of Nitrogen-Doped YSZ
  107. A chemically driven insulator–metal transition in non-stoichiometric and amorphous gallium oxide
  108. Preparation of nitrogen-doped YSZ thin films by pulsed laser deposition and their characterization
  109. Kinetic studies of the electrochemical nitrogen reduction and incorporation into yttria stabilized zirconia
  110. Electrochemical Incorporation of Nitrogen into a Zirconia Solid Electrolyte
  111. Nitrogen Tracer Diffusion in Yttria Doped Zirconium Oxonitride
  112. Electrochemical Reduction and Incorporation of Nitrogen into Oxygen Conducting Oxides
  113. Electrochemical growth of thin La2O3 films on oxide and metal surfaces
  114. Study of the kinetics of processes during electrochemical deposition of zirconia from nonaqueous electrolytes
  115. Chemical composition and corrosion resistance of passive chromate films formed on stainless steels 316 L and 1.4301
  116. Electrochemical deposition of thin zirconia films on stainless steel 316 L