All Stories

  1. Improved interface and electrical properties of atomic layer deposited Al 2 O 3 /4H-SiC

    Article • Applied Surface Science, March 2018, Elsevier

    Dr David M Martin

  2. Physical Characterisation of 3C-SiC(001)/SiO2 Interface Using XPS

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Dr David M Martin

  3. 3C-SiC Transistor With Ohmic Contacts Defined at Room Temperature

    Article • IEEE Electron Device Letters, September 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr David M Martin

  4. Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3C-SiC(100)/Si

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Dr YOGESH SHARMA, Dr David M Martin

  5. High Temperature Nitridation of 4H-SiC MOSFETs

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Dr YOGESH SHARMA, Dr David M Martin, Tianxiang Dai

  6. Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Peter Gammon, Dr David M Martin

  7. Tailoring the Interface between Dielectric and 4H-SiC by Ion Implantation

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Dr David M Martin

  8. 4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption

    Article • Journal of Applied Physics, March 2015, American Institute of Physics

    Dr. Muhammad Usman, Dr David M Martin

  9. Passivation of SiC device surfaces by aluminum oxide

    Article • IOP Conference Series Materials Science and Engineering, March 2014, Institute of Physics Publishing

    Dr. Muhammad Usman, Dr David M Martin

  10. Characterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS Capacitor

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Dr David M Martin

  11. FBAR Sensor Array for in Liquid Operation

    Article • IEEE Sensors Journal, December 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr David M Martin

  12. Localised modifications of anatase TiO2 thin films by a Focused Ion Beam

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, October 2010, Elsevier

    Dr David M Martin

  13. ERD analysis and modification of TiO2 thin films with heavy ions

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, June 2010, Elsevier

    Dr David M Martin

  14. Implantation of anatase thin film with 100keV 56Fe ions: Damage formation and magnetic behaviour

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, August 2009, Elsevier

    Dr David M Martin

  15. Thick NiSi Electrodes for AlN Electroacoustic Applications

    Article • Electrochemical and Solid-State Letters, January 2009, The Electrochemical Society

    Dr David M Martin

  16. Improved Properties of AlON/4H SiC Interface for Passivation Studies

    Article • Materials Science Forum, January 2009, Trans Tech Publications

    Dr David M Martin

  17. Buried aluminum nitride insulator for improving thermal conduction in SOI

    Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr David M Martin

  18. Thermal characterization of Silicon-on-SiC substrates

    Article • October 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Dr David M Martin

  19. High rate reactive magnetron sputter deposition of titanium oxide

    Article • Applied Physics Letters, June 2008, American Institute of Physics

    Dr David M Martin

  20. Optimisation of a smooth multilayer nickel silicide surface for ALN growth

    Article • Journal of Physics Conference Series, March 2008, Institute of Physics Publishing

    Dr David M Martin

  21. Comparing XPS and ToF-ERDA measurement of high-k dielectric materials

    Article • Journal of Physics Conference Series, March 2008, Institute of Physics Publishing

    Dr David M Martin

  22. Solidly mounted thin film electro-acoustic resonator utilizing a conductive Bragg reflector

    Article • Sensors and Actuators A Physical, February 2008, Elsevier

    Dr David M Martin

  23. Buried electrode electroacoustic technology for the fabrication of thin film based resonant components

    Article • Journal of Micromechanics and Microengineering, August 2006, Institute of Physics Publishing

    Dr David M Martin

  24. M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate

    Article • May 2005, CrossRef Test Account

    Dr David M Martin

  25. M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate

    Article • Materials Science Forum, January 2005, Trans Tech Publications

    Dr David M Martin

  26. Bistable defect in mega-electron-volt proton implanted 4H silicon carbide

    Article • Applied Physics Letters, March 2004, American Institute of Physics

    Dr David M Martin

  27. Annealing study of a bistable defect in proton-implanted n-type 4H-SiC

    Article • Physica B Condensed Matter, December 2003, Elsevier

    Dr David M Martin

  28. Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy

    Article • Materials Science Forum, January 2003, Trans Tech Publications

    Dr David M Martin

  29. Fabrication and evaluation of an "electrodeless" solidly mounted thin film electroacoustic resonator

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr David M Martin