All Stories

  1. Stoichiometry of the ALD-Al2O3/4H–SiC interface by synchrotron-based XPS

    Article • Journal of Physics D Applied Physics, May 2016, Institute of Physics Publishing

    Dr. Muhammad Usman

  2. 4H-SiC/Al2O3 interface using Synchrotron XPS

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Dr. Muhammad Usman

  3. Dual band nano structured anti reflection thin film coatings

    Article • Protection of Metals and Physical Chemistry of Surfaces, May 2016, Pleiades Publishing Ltd

    Dr. Muhammad Usman

  4. Enhancement of Curie Temperature (T c) and Magnetization of Fe-Ni Invar alloy Through Cu Substitution and with He+2 Ion Irradiation

    Article • Journal of Electronic Materials, December 2015, Springer Science + Business Media

    Dr. Muhammad Usman

  5. Structural, optical, and electrical characteristics of AlN:Ho thin films irradiated with 700keV protons

    Article • Applied Surface Science, December 2015, Elsevier

    Dr. Muhammad Usman, Dr. Iftikhar Ahmad

  6. Ion implantation induced nitrogen defects in GaN

    Article • Journal of Physics D Applied Physics, October 2015, Institute of Physics Publishing

    Dr. Muhammad Usman

  7. 4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption

    Article • Journal of Applied Physics, March 2015, American Institute of Physics

    Dr. Muhammad Usman, Dr David M Martin

  8. Copper phthalocyanine and metal free phthalocyanine bulk heterojunction photodetector

    Article • Physica B Condensed Matter, January 2015, Elsevier

    Dr. Muhammad Usman

  9. Structural characteristics of Ni+-implanted AlN thin film

    Article • Surface Topography Metrology and Properties, September 2014, Institute of Physics Publishing

    Dr. Muhammad Usman

  10. Passivation of SiC device surfaces by aluminum oxide

    Article • IOP Conference Series Materials Science and Engineering, March 2014, Institute of Physics Publishing

    Dr. Muhammad Usman, Dr David M Martin

  11. Device design assessment of 4H–SiC n-IGBT – A simulation study

    Article • Solid-State Electronics, February 2014, Elsevier

    Dr. Muhammad Usman

  12. Substitutional carbon doping of hexagonal multi-walled boron nitride nanotubes (h-MWBNNTs) via ion implantation

    Article • Journal of Nanoparticle Research, December 2013, Springer Science + Business Media

    Dr. Muhammad Usman

  13. Structural modifications of AlInN/GaN thin films by neon ion implantation

    Article • Physics Letters A, December 2013, Elsevier

    Dr. Muhammad Usman, Prof. Dr. Abdul Majid

  14. HfO2/Al2O3 Bilayered High-k Dielectric for Passivation and Gate Insulator in 4H-SiC Devices

    Article • ECS Journal of Solid State Science and Technology, July 2013, The Electrochemical Society

    Dr. Muhammad Usman

  15. Effect for hydrogen, nitrogen, phosphorous, and argon ions irradiation on ZnO NWs

    Article • Journal of Nanoparticle Research, March 2013, Springer Science + Business Media

    Dr. Muhammad Usman

  16. A Comparison of Free Carrier Absorption and Capacitance Voltage Methods for Interface Trap Measurements

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Dr. Muhammad Usman

  17. Position-Dependent Bulk Traps and Carrier Compensation in 4H-SiC Bipolar Junction Transistors

    Article • IEEE Transactions on Electron Devices, January 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Muhammad Usman

  18. Impact of Ionizing Radiation on the $\hbox{SiO}_{2}/ \hbox{SiC}$ Interface in 4H-SiC BJTs

    Article • IEEE Transactions on Electron Devices, December 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Muhammad Usman

  19. Effect of Nuclear Scattering Damage at SiO2/SiC and Al2O3/SiC Interfaces – a Radiation Hardness Study of Dielectrics

    Article • Materials Science Forum, May 2012, Trans Tech Publications

    Dr. Muhammad Usman

  20. Radiation-Hard Dielectrics for 4H–SiC: A Comparison Between $\hbox{SiO}_{2}$ and $ \hbox{Al}_{2}\hbox{O}_{3}$

    Article • IEEE Electron Device Letters, December 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Muhammad Usman

  21. Surface Recombination Investigation in Thin 4H-SiC Layers

    Article • Materials Science, July 2011, Publishing House Technologija

    Dr. Muhammad Usman

  22. Characterization of Al-Based High-k Stacked Dielectric Layers Deposited on 4H-SiC by Atomic Layer Deposition

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    Dr. Muhammad Usman

  23. Toward the Understanding of Stacked Al-Based High-k Dielectrics for Passivation of 4H-SiC Devices

    Article • Journal of The Electrochemical Society, January 2011, The Electrochemical Society

    Dr. Muhammad Usman

  24. Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

    Article • Physica Scripta, November 2010, Institute of Physics Publishing

    Dr. Muhammad Usman

  25. Low-Temperature Annealing of Radiation-Induced Degradation in 4H-SiC Bipolar Junction Transistors

    Article • IEEE Electron Device Letters, July 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Muhammad Usman

  26. Annealing of ion implanted 4H–SiC in the temperature range of 100–800°C analysed by ion beam techniques

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, June 2010, Elsevier

    Dr. Muhammad Usman

  27. Time-resolved luminescence studies of proton-implanted GaN

    Article • Applied Physics Letters, September 2009, American Institute of Physics

    Dr. Muhammad Usman

  28. Electrical and structural characterization of ion implanted GaN

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, May 2009, Elsevier

    Dr. Muhammad Usman