All Stories

  1. Design Optimization of 1.2kV 4H-SiC Trench MOSFET

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Peter Gammon, Tianxiang Dai

  2. Study of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-Pillars

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Mr Chun Wa chan, Peter Gammon

  3. Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Tianxiang Dai, Peter Gammon

  4. Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Peter Gammon

  5. 4H-SiC trench MOSFET with integrated fast recovery MPS diode

    Article • Electronics Letters, February 2018, the Institution of Engineering and Technology (the IET)

    Peter Gammon, Mr Chun Wa chan, Tianxiang Dai

  6. Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Peter Gammon

  7. Numerical Study of Energy Capability of Si/SiC LDMOSFETs

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Mr Chun Wa chan, Peter Gammon

  8. An Investigation into the Impact of Surface Passivation Techniques Using Metal-Semiconductor Interfaces

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Peter Gammon

  9. The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Peter Gammon

  10. Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

    Article • E3S Web of Conferences, January 2017, EDP Sciences

    Peter Gammon

  11. Si/SiC Substrates for the Implementation of Linear-Doped Power LDMOS Studied with Device Simulation

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Mr Chun Wa chan, Peter Gammon

  12. Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Peter Gammon, Dr David M Martin

  13. Simulations of a Lateral PiN Diode on Si/SiC Substrate for High Temperature Applications

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Peter Gammon, Mr Chun Wa chan

  14. Si/SiC substrates for the implementation of linear-doped power LDMOS studied with device simulation

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Peter Gammon, Mr Chun Wa chan, Dr Saeed Jahdi

  15. Gate traps inducing band-bending fluctuations on AlGaN/GaN heterojunction transistors

    Article • Applied Physics Letters, January 2013, American Institute of Physics

    Peter Gammon

  16. A study of temperature-related non-linearity at the metal-silicon interface

    Article • Journal of Applied Physics, December 2012, American Institute of Physics

    Peter Gammon

  17. Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

    Article • Applied Physics Letters, November 2011, American Institute of Physics

    Peter Gammon